IP Library › Granted Patent US 6,928,011
Granted Patent B2
US 6,928,011 · App. 10/630,963 · Granted Aug 9, 2005

Electrical fuse control of memory slowdown

Assignee: Texas Instruments Incorporated
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Quick Facts
Patent No.
US 6,928,011
App. No.
10/630,963
Granted
Aug 9, 2005
Kind
B2
Abstract

Electrical fuses (eFuses) are applied to the task of memory performance adjustment to improve upon earlier fuse techniques by not requiring an additional processing step and expensive equipment. Standard electrical fuse (eFuse) hardware chains provide a soft test feature wherein the effect of memory slow-down can be tested prior to actually programming the fuses. Electrical fuses thus provide a very efficient non-volatile method to match the logic-memory interface through memory trimming, drastically cutting costs and cycle times involved.

Claims (50)

1. A method of operating an integrated circuit including read accessible memory comprising the steps of:

testing memory read operations beginning at a maximum speed at successively slower speeds until all memory reads pass;

determining memory read program bits for a highest memory speed passing the memory read tests; and

programming write once bits according to determined memory read program bits.

2. The method of claim 1 further comprising the steps of:

preliminary soft programming determined bits; and

testing non-memory portions of the integrated circuit using soft programmed determined memory read program bits.

3. The method of claim 1 wherein:

said step of programming write once bits includes

applying program voltages to the bits,

testing the write once bits to determine achieved programming, and

repeating applying program voltages and testing the write once bits until the testing confirms correct write once bit programming.

4. The method of claim 1 wherein programming of write once bits includes:

merging of programming of write once bits for memory read speed with programming write once bits not related to memory speed.

5. The method of claim 4 wherein:

the write once bits not related to memory speed include a specific die-identification bit code.

6. The method of claim 4 wherein:

the write once bits not related to memory read speed include write once bits for memory redundancy programming.

7. The method of claim 4 wherein:

the write once bits not related to memory read speed include write once bits for control of programmable logic functions.

8. The method of claim 1 , wherein the read accessible memory is write accessible, further comprising:

testing memory write operations beginning at a maximum speed at successively slower speeds until all memory reads pass;

determining memory write program bits for a highest memory speed passing the memory write tests; and

said step of programming write once bits according to determined memory read program bits further includes programming write once bits according determined memory write program bits.

9. The method of claim 1 further comprising the steps of:

operating memory read operations of the read accessible memory at a speed corresponding to the programmed write once memory read program bits.

10. The method of claim 8 further comprising the steps of:

operating memory write operations of the read accessible memory at a speed corresponding to the programmed write once memory write program bits.

11. A method of operating an integrated circuit including write accessible memory comprising the steps of:

testing memory write operations beginning at a maximum speed at successively slower speeds until all memory writes pass;

determining memory write program bits for a highest memory speed passing the memory write tests; and

programming write once bits according to determined memory write program bits.

12. The method of claim 11 further comprising the steps of:

preliminary soft programming determined write once bits; and

testing non-memory portions of the integrated circuit using soft programmed determined memory write program bits.

13. The method of claim 11 wherein:

said step of programming write once bits includes

applying program voltages to the write once bits,

testing the write once bits to determine achieved programming, and

repeating applying program voltages and testing the write once bits until the testing confirms correct write once bit programming.

14. The method of claim 11 wherein:

programming of write once bits includes merging of programming of write once bits for memory write speed with programming write once bits not related to memory speed.

15. The method of claim 14 wherein:

the write once bits not related to memory write speed include a specific die-identification bit code.

16. The method of claim 14 wherein:

the write once bits not related to memory write speed include write once bits for memory redundancy programming.

17. The method of claim 14 wherein:

the write once bits not related to memory write speed include write once bits for control of programmable logic functions.

18. The method of claim 11 further comprising the steps of:

operating memory write operations of the write accessible memory at a speed corresponding to the programmed write once memory write program bits.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 30, 2003
From: KRISHNAN, MANJERI; SHEFFIELD, BRYAN; GRABER, JOEL J.; LE, DUY-LOAN; AGARWALA, SANJIVE
To: TEXAS INSTRUMENTS INCORPORATED
Reel/Frame 014365/0926 →
Continuity (1)
Related Publication 20050024960A1 · Feb 3, 2005