Electronic device includes an insulating film having density or carbon concentration varying gradually in the direction of the thickness and a conductive film formed therein
View Patent ↗A hole is formed in an insulating film containing silicon and carbon. The insulating film has a density or a carbon concentration varying gradually in the direction of the thickness thereof.
1. An electronic device comprising:
a first insulating film formed on a substrate, a conductive film formed in the first insulating film, and
wherein the first insulating film includes silicon and carbon, and the first insulating film has a density varying gradually in a direction of a thickness thereof.
2. The electronic device of claim 1 , wherein an uppermost portion of the first insulating film has a density higher than an average density of the first insulating film.
3. The electronic device of claim 2 , wherein the density of the uppermost portion is 1.8 g/cm 3 or more and the average density is 1:4 g/cm 3 or less.
4. The electronic device of claim 1 , wherein a lowermost portion of the first insulating film has a density higher than an average density of the first insulating film.
5. The electronic device of claim 4 , wherein the density of the lowermost portion is 1.8 g/cm 3 or more and the average density is 1.4 g/cm 3 or less.
6. The electronic device of claim 1 , further comprising:
a second insulating film formed on the first insulating film, wherein
an average density of the second insulating film is 1.5 g/cm 3 or more and 1.7 g/cm 3 or less.
7. The electronic device of claim 1 , further comprising:
a second insulating film formed on the first insulating film, wherein
an abundance ratio of oxygen to silicon each contained in a portion of the second insulating film located adjacent to the first insulating film is less than 2.
8. An electronic device comprising:
a first insulating film formed on a substrate, a conductive film formed in the first insulating film, and
wherein the first insulating film includes silicon and carbon, and the first insulating film has a carbon concentration varying gradually in a direction of a thickness thereof.
9. The electronic device of claim 8 , wherein an uppermost portion of the first insulating film has a carbon concentration higher than an average carbon concentration of the first insulating film.
10. The electronic device of claim 9 , wherein the carbon concentration of the uppermost portion is 30 at % or more and the average carbon concentration is 20 at % or less.
11. The electronic device of claim 8 , wherein a lowermost portion of the first insulating film has a carbon concentration higher than an average carbon concentration of the first insulating film.
12. The electronic device of claim 11 , wherein the carbon concentration of the lowermost portion is 30 at % or more and the average carbon concentration is 20 at % or less.
13. The electronic device of claim 8 , further comprising:
a second insulating film formed on the first insulating film, wherein
an average density of the second insulating film is 1.5 g/cm 3 or more and 1.7 g/cm 3 or less.
14. The electronic device of claim 8 , further comprising:
a second insulating film formed on the first insulating film, wherein
an abundance ratio of oxygen to silicon each contained in a portion of the second insulating film adjacent to the first insulating film is less than 2.