Method of TiSiN deposition using a chemical vapor deposition (CVD) process
A method of forming a titanium silicide nitride (TiSiN) layer on a substrate id described. The titanium silicide nitride (TiSiN) layer is formed by providing a substrate to a process chamber and treating the substrate with a silicon-containing gas. A titanium nitride layer is formed on the treated substrate and exposed to a silicon-containing gas. The titanium nitride (TiN) layer reacts with the silicon-containing gas to form the titanium silicide nitride (TiSiN) layer. The formation of the titanium silicide nitride (TiSiN) layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the titanium silicide nitride (TiSiN) layer may be used as a diffusion barrier for a tungsten (W) metallization process.
1. A method of film deposition, comprising:
(a) treating a first surface of a substrate in a process chamber with a silicon-containing gas;
(b) forming a titanium nitride (TiN) layer on the first surface of the substrate after performing step (a); and
(c) exposing the titanium nitride (TiN) layer to a silicon-containing gas to convert the titanium nitride (TiN) layer to a titanium silicide nitride (TiSiN) layer.
2. The method of claim 1 wherein the silicon-containing gas of step (a) and step (C) is selected from the group consisting of silane (SiH 4 ) and disilane (Si 2 H 6 ).
3. The method of claim 2 wherein the silicon-containing gas is mixed with one or more gases selected from the group consisting of hydrogen (H 2 ), nitrogen (N 2 ), argon (Ar) and helium (He).
4. The method of claim 3 wherein the silicon-containing gas is mixed with hydrogen (H 2 ).
5. The method of claim 4 wherein the ratio of the silicon-containing gas to the hydrogen (H 2 ) is greater than 1.
6. The method of claim 1 wherein the titanium nitride (TiN) layer is formed from a reaction of titanium tetrachloride (TiCl 4 ) and ammonia (NH 3 ).
7. The method of claim 1 , further comprising treating the titanium nitride layer with a hydrogen-containing plasma prior to exposing the titanium nitride (TIN) layer to the silicon-containing gas of step (c).
8. The method of claim 1 , further comprising:
(d) treating the titanium silicide nitride (TiSiN) layer with a hydrogen-containing plasma.
9. The method of claim 1 , further comprising removing reaction by-products generated during titanium nitride (TiN) layer formation from the process chamber prior to exposing the titanium nitride (TiN) layer to the silicon-containing gas of step (c).
10. The method of claim 9 wherein the reaction by-products are removed from the process chamber by providing a purge gas thereto and evacuating both the purge gas and the reaction by-products therefrom.
11. The method of claim 10 wherein the purge gas comprises one or more gases selected from the group consisting of nitrogen (N 2 ), hydrogen (H 2 ), helium (He), argon (Ar), neon (Ne) and xenon (Xe).
12. A method of film deposition, comprising:
(a) treating a first surface of a substrate in a process chamber with a silicon-containing gas;
(b) forming a titanium nitride (TiN) layer on the first surface of the substrate after performing step (a);
(c) exposing the titanium nitride (TiN) layer to a silicon-containing gas to convert the titanium nitride (TIN) layer to a titanium silicide nitride (TiSiN) layer;
(d) treating the titanium silicide nitride (TiSiN) layer with a hydrogen-containing plasma; and
(e) exposing the titanium silicide nitride (TiSiN) layer to a silicon-containing gas to incorporate silicon therein.
13. The method of claim 12 wherein the silicon-containing gas of step (a), step (c) and step (e) is selected from the group consisting of silane (SiH 4 ) and disilane (Si 2 H 6 ).
14. The method of claim 13 wherein the silicon-containing gas is mixed with one or more gases selected from the group consisting of hydrogen (H 2 ), nitrogen (N 2 ), argon (Ar) and helium (He).
15. The method of claim 14 wherein the silicon-containing gas is mixed with hydrogen (H 2 ).
16. The method of claim 15 wherein the ratio of the silicon-containing gas to the hydrogen (H 2 ) is greater than 1.
17. The method of claim 12 wherein the titanium nitride (TiN) layer is formed from a reaction of titanium tetrachloride (TiCl 4 ) and ammonia (NH 3 ).
18. The method of claim 12 , further comprising removing reaction by-products from the process chamber prior to exposing the titanium nitride (TiN) layer to the silicon-containing gas in step (c) and step (e).
19. The method of claim 18 wherein the reaction by-products are removed from the process chamber by providing a purge gas thereto and evacuating both the purge gas and the reaction by-products therefrom.
20. The method of claim 19 wherein the purge gas comprises one or more gases selected from the group consisting of nitrogen (N 2 ), hydrogen (H 2 ), helium (He), argon (Ar), neon (Ne) and xenon (Xe).
21. A method of forming a barrier layer for use in integrated circuit fabrication, comprising:
(a) treating a first surface of a substrate in a process chamber with a silicon-containing gas;
(b) forming a titanium nitride (TiN) layer on the first surface of the substrate after performing step (a);
(c) exposing the titanium nitride (TiN) layer to a silicon-containing gas to convert the titanium nitride (TiN) layer to a titanium silicide nitride (TiSiN) layer; and
(d) forming a metal layer on the titanium silicide nitride (TiSiN) layer.
22. The method of claim 21 wherein the silicon-containing gas of step (a) and step (c) is selected from the group consisting of silane (SiH 4 ) and disilane (Si 2 H 6 ).
23. The method of claim 22 wherein the silicon-containing gas is mixed with one or more gases selected from the group consisting of hydrogen (H 2 ), nitrogen (N 2 ), argon (Ar) and helium (He).
24. The method of claim 23 wherein the silicon-containing gas is mixed with hydrogen (H 2 ).
25. The method of claim 24 wherein the ratio of the silicon-containing gas to the hydrogen (H 2 ) is greater than 1.
26. The method of claim 21 wherein the titanium nitride (TiN) layer is formed from a reaction of titanium tetrachloride (TiCl 4 ) and ammonia (NH 3 ).
27. The method of claim 21 , further comprising treating the titanium nitride layer with a hydrogen-containing plasma prior to exposing the titanium nitride (TiN) layer to the silicon-containing gas of step (c).
28. The method of claim 21 , further comprising:
(e) treating the titanium silicide nitride (TiSiN) layer with a hydrogen-containing plasma.
29. The method of claim 21 , further comprising removing reaction by-products generated during titanium nitride (TiN) layer formation from the process chamber prior to exposing the titanium nitride (TiN) layer to the silicon-containing gas of step (c).
30. The method of claim 29 wherein the reaction by-products are removed from the process chamber by providing a purge gas thereto and evacuating both the purge gas and the reaction by-products therefrom.
31. The method of claim 30 wherein the purge gas comprises one or more gases selected from the group consisting of nitrogen (N 2 ), hydrogen (H 2 ), helium (He), argon (Ar), neon (Ne) and xenon (Xe).
32. A method of forming a barrier layer for use in integrated circuit fabrication, comprising:
(a) treating a first surface of a substrate in a process chamber with a silicon-containing gas;
(b) forming a titanium nitride (TiN) layer on the first surface of the substrate after performing step (a);
(c) exposing the titanium nitride (TiN) layer to a silicon-containing gas to convert the titanium nitride (TiN) layer to a titanium silicide nitride (TiSiN) layer;
(d) treating the titanium silicide nitride (TiSiN) layer with a hydrogen-containing plasma;
(e) exposing the titanium silicide nitride (TiSiN) layer to a silicon-containing gas to incorporate silicon therein; and
(f) forming a metal layer on the titanium silicide nitride (TiSiN) layer.
33. The method of claim 32 wherein the silicon-containing gas of step (a), step (c) and step (e) is selected from the group consisting of silane (SiH 4 ) and disilane (Si 2 H 6 ).
34. The method of claim 33 wherein the silicon-containing gas is mixed with one or more gases selected from the group consisting of hydrogen (H 2 ), nitrogen (N 2 ), argon (Ar) and helium (He).
35. The method of claim 34 wherein the silicon-containing gas is mixed with hydrogen (H 2 ).
36. The method of claim 35 wherein the ratio of the silicon-containing gas to the hydrogen (H 2 ) is greater than 1.
37. The method of claim 32 wherein the titanium nitride (TiN) layer is formed from a reaction of titanium tetrachloride (TiCl 4 ) and ammonia (NH 3 ).
38. The method of claim 32 , further comprising removing reaction by-products from the process chamber prior to exposing the titanium nitride (TiN) layer to the silicon-containing gas in step (c) and step (e).
39. The method of claim 38 wherein the reaction by-products are removed from the process chamber by providing a purge gas thereto and evacuating both the purge gas and the reaction by-products therefrom.
40. The method of claim 39 wherein the purge gas comprises one or more gases selected from the group consisting of nitrogen (N 2 ), hydrogen (H 2 ), helium (He), argon (Ar), neon (Ne) and xenon (Xe).