Light emitting device and method of manufacturing the same
View Patent ↗There is provided a light emitting device in which low power consumption can be realized even in the case of a large screen. The surface of a source signal line or a power supply line in a pixel portion is plated to reduce a resistance of a wiring. The source signal line in the pixel portion is manufactured by a step different from a source signal line in a driver circuit portion. The power supply line in the pixel portion is manufactured by a step different from a power supply line led on a substrate. A terminal is similarly plated to made the resistance reduction. It is desirable that a wiring before plating is made of the same material as a gate electrode and the surface of the wiring is plated to form the source signal line or the power supply line.
1. A light emitting device comprising:
a plurality of pixels arranged in a matrix, each of the plurality of pixels comprising a switching element and a light emitting element, the light emitting element comprising a light emitting layer including an organic compound; and
a plurality of source signal lines for supplying signals to the switching element,
wherein at least one of the plurality of source signal lines comprises a first conductor and a first plated film on upper and side surfaces of the first conductor and
wherein said first conductor comprises an Ag particle.
2. A light emitting device according to claim 1 , wherein the plated film is formed by an electroplating method.
3. A light emitting device according to claim 1 , wherein the plated film comprises at least one selected from the group consisting of Cu. Al, Au, Ag, and an alloy thereof as a main component.
4. A light emitting device according to any one of claim 1 , wherein the first conductor is made of the same material as a gate electrode of the switching element.
5. A light emitting device according to claim 1 , wherein the switching element comprises at least one thin film transistor.
6. An electronic appliance comprising the light emitting device according to claim 1 , wherein the light emitting device is selected from the group consisting of an electroluminescence display device, a personal computer, and a digital versatile disk.
7. A light emitting device comprising:
a plurality of pixels arranged in a matrix, each of the plurality of pixels comprising a switching element and a light emitting element, the light emitting element comprising a light emitting layer including an organic compound; and
a plurality of power supply lines for supplying potentials to the light emitting element,
wherein at least one of the plurality of power supply lines comprises a first conductor and a first plated film on upper and side surfaces of the first conductor, and
wherein said first conductor comprises an Ag particle.
8. A light emitting device according to claim 7 , wherein the plated film is formed by an electroplating method.
9. A light emitting device according to claim 7 , wherein the plated film comprises at least one selected film the group consisting of Cu, Al, Au, Ag, and an alloy thereof as a main component.
10. A light emitting device according to any one of claim 7 , wherein the first conductor is made of the same material as a gate electrode of the switching element.
11. A light emitting device according to claim 7 , wherein the switching element comprises at least one thin film transistor.
12. An electronic appliance comprising the light emitting device according to claim 7 , wherein the light emitting device is selected from the group consisting of an electroluminescence display device, a personal computer, and a digital versatile disk.
13. A light emitting device comprising:
a plurality of pixels arranged in a matrix, each of the plurality of pixels comprising a switching element and a light emitting element, the light emitting element comprising a light emitting layer including an organic compound;
a plurality of source signal lines for supplying signals to the switching element; and
a plurality of power supply lines for supplying potentials to the light emitting element,
wherein at least one of the plurality of source signal lines comprises a first conductor and a first plated film on upper and side surfaces of the first conductor,
wherein at least one of the plurality of power supply lines comprises a second conductor and a second plated film on upper and side surfaces of the second conductor, and
wherein each of said first conductor and said second conductor comprises an Ag particle.
14. A light emitting device according to claim 13 , wherein at least one of the first plated film and the second plated film is formed by an electroplating method.
15. A light emitting device according to claim 13 , wherein at least one of the first plated film and the second plated film comprises at least one selected from the group consisting of Cu, Al, Au, Ag, and an alloy thereof as a main component.
16. A light emitting device according to claim 13 , wherein the first conductor and the second conductor are simultaneously formed.
17. A light emitting device according to claim 13 , wherein at least one of the first plated film and the second plated film is made of the same material as a gate electrode of the switching element.
18. A light emitting device according to any one of claim 13 , wherein at least one of the first plated film and the second plated film is formed by a printing method.
19. A light emitting device according to claim 13 , wherein the switching element comprises at least one thin film transistor.
20. An electronic appliance comprising the tight emitting device according to claim 13 , wherein the light emitting device is selected from the group consisting of an electroluminescence display device, a personal computer, and a digital versatile disk.