High-frequency package
A high-frequency package comprises a dielectric substrate, on an upper face of which a mounting portion of a high-frequency circuit component is formed, a first line conductor formed on the upper face for transmitting high-frequency signals, a first coplanar grounding conductor, a second line conductor formed on a lower face, a second coplanar grounding conductor, a through conductor formed inside for connecting the first and second line conductors, a grounding through conductor connecting the first and second coplanar grounding conductors, a metal terminal bonded to the second line conductor, and grounding metal terminals bonded to the second coplanar grounding conductor, wherein a gap between the grounding metal terminals is equal to or less than ½ of a wavelength of high-frequency signals.
1. A high-frequency package comprising:
a dielectric substrate, on one face of which a mounting portion of a high-frequency circuit component is formed;
a first line conductor, formed on the one face of the dielectric substrate from a vicinity of the mounting portion in an outer periphery direction, for transmitting high-frequency signals;
a first coplanar grounding conductor formed on both sides of the first line conductor on the one face of the dielectric substrate;
a second line conductor, formed on another face of the dielectric substrate toward an outer periphery edge so that an end portion thereof faces an outer-periphery-side end portion of the first line conductor, for transmitting the high-frequency signals;
a second coplanar grounding conductor formed on both sides of the second line conductor on the other face of dielectric substrate;
a through conductor, formed inside the dielectric substrate, for electrically connecting the facing end portions of the first and second line conductors;
a grounding through conductor, formed inside the dielectric substrate, for electrically connecting the first and second coplanar grounding conductors;
a metal terminal bonded to the second line conductor in parallel; and
grounding metal terminals bonded to the second coplanar grounding conductors on both sides of the metal terminal in parallel, respectively,
wherein a gap between the grounding metal terminals is equal to or less than one half of a wavelength of the high-frequency signals.
2. The high-frequency package of claim 1 , wherein a conductor non-formed portion is disposed on a region in the first coplanar grounding conductor corresponding to a position of the metal terminal.
3. The high-frequency package of claim 2 , wherein a width of the non-formed portion is equal to a width between the grounding metal terminals.
4. The high-frequency package of claim 2 , wherein a width of the non-formed portion is equal to or less than 80% of a width between the grounding metal terminals.
5. The high-frequency package of claim 2 , wherein a shape of the non-formed portion is a circle or an oval.
6. The high-frequency package of claim 1 , wherein the metal terminal is placed on a side of an outer periphery of the dielectric substrate.
7. The high-frequency package of claim 1 , wherein a castellation grounding conductor that electrically connects the first coplanar grounding conductor and the grounding metal terminal is disposed on a region in a side face of the dielectric substrate corresponding to a position of the grounding metal terminal.