Process chamber having component with yttrium-aluminum coating
View Patent ↗A substrate processing chamber component is a structure having an integral surface coating comprising an yttrium-aluminum compound. The component may be fabricated by forming a metal alloy comprising yttrium and aluminum into the component shape and anodizing its surface to form an integral anodized surface coating. The chamber component may be also formed by ion implanting material in a preformed metal shape. The component may be one or more of a chamber wall, substrate support, substrate transport, gas supply, gas energizer and gas exhaust.
1. A substrate processing chamber component capable of being exposed to a RF or microwave energized gas in a substrate processing chamber, the component comprising a metal alloy comprising yttrium and aluminum, the metal alloy having an anodized surface coating formed by applying an electrical bias power to the metal alloy, wherein the anodized surface coating comprises an yttrium-aluminum compound.
2. A component according to claim 1 wherein the metal alloy comprises an yttrium content of at least about 5% by weight.
3. A component according to claim 1 wherein the yttrium-aluminum compound comprises yttrium aluminum oxide.
4. A component according to claim 3 wherein the yttrium-aluminum compound comprises YAG.
5. A component according to claim 1 wherein the anodized surface coating comprises a thickness of from about 0.5 mils to about 8 mils.
6. A component according to claim 1 wherein the metal alloy comprises a portion of an enclosure wall.
7. A component according to claim 1 wherein the metal alloy comprises a portion of a wall liner.
8. A component according to claim 1 wherein the integral surface coating comprises yttrium-aluminum oxide having a compositional gradient through a thickness of the coating.
9. A component according to claim 1 wherein the component is absent a discrete boundary between the surface coating and the metal alloy.
10. A component according to claim 1 wherein the surface coating is adapted to be exposed to a plasma in the substrate processing chamber.
11. A component according to claim 1 wherein the substrate processing chamber processes substrates by etching or depositing material on the substrates.
12. A substrate processing apparatus comprising:
a process chamber having a wall about a process zone;
a substrate transport capable of transporting a substrate into the process chamber;
a substrate support capable of receiving a substrate;
a gas supply capable of introducing a process gas into the process chamber,
a gas energizer capable of energizing the process gas from the process chamber; and
an exhaust capable of exhausting the proves, gas from the process chamber,
wherein one or more of the process chamber wall, substrate support, substrate transport, gas supply, gas energizer and gas exhaust, comprises a metal alloy comprising yttrium and aluminum, the metal alloy having an anodized surface coating formed by applying an electrical bias power to the metal alloy, wherein the anodized surface coating comprises of an yttrium-aluminum compound.
13. An apparatus according to claim 12 wherein the metal alloy comprises an yttrium content of at least about 5% by weight.
14. An apparatus according to claim 12 wherein the surface coating comprises an ion implanted coating.
15. An apparatus according to claim 12 wherein the yttrium-aluminum compound comprises yttrium aluminum oxide.
16. An apparatus according to claim 12 wherein the yttrium-aluminum compound comprises YAG.
17. An apparatus according to claim 12 wherein the surface coating comprises yttrium-aluminum oxide having a compositional gradient through a thickness of the surface coating.
18. An apparatus according to claim 12 wherein the component is absent a discrete boundary between the surface coating and the metal alloy.
19. A component for a substrate processing chamber that is capable of being exposed to a RF or microwave energized gas, the component comprising:
a metal alloy comprising yttrium and aluminum metal alloy having a coating capable of being exposed to the RF or microwave energized gas in the substrate processing chamber, the coating comprising yttrium-aluminum oxide having a compositional gradient through a thickness of the coating.
20. A component according to claim 19 wherein the compositional gradient continuously varies through the thickness of the coating.
21. A component according to claim 19 wherein the yttrium-aluminum oxide comprises YAG.
22. A component for a substrate processing chamber that is capable of being exposed to a RF or microwave energized gas, the component comprising:
a structure having a coating capable of being exposed to the RF or microwave energized gas in the substrate processing chamber, the coating comprising yttrium-aluminum oxide having a compositional gradient through a thickness of the coating, the yttrium-aluminum oxide comprising YAG.
23. A component according to claim 22 wherein the coating comprises an anodized-coating.
24. A component according to claim 22 wherein the coating comprises an ion implanted coating.
25. A substrate processing apparatus comprising:
a process chamber having a wall about a process zone;
a substrate transport capable of transporting a substrate into the process chamber;
a substrate support capable of receiving a substrate;
a gas supply capable of introducing a process gee into the process chamber;
a gas energizer capable of energizing the process gas in the process chamber; and
an exhaust capable of exhausting the process gas from the process chamber,
wherein one or more of the process chamber wall, substrate support, substrate transport, gas supply, gas energizer and gas exhaust, comprises a structure having a surface coating, the surface coating comprising yttrium-aluminum oxide having compositional gradient through a thickness of the coating.
26. An apparatus according to claim 25 wherein the surface coating comprises an anodized surface coating formed by applying an electrical bias power.
27. An apparatus according to claim 25 wherein the surface coating comprises an ion implanted coating.