Method of manufacturing the semiconductor device
A method of manufacturing semiconductor device including a capacitor including a pair of electrodes and a ferroelectric flu with ferroelectricity sandwiched therebetween, by depositing the ferroelectric film on first substrate; forming the capacitor by grinding the ferroelectric film and forming the electrodes so that the electrodes are perpendicular to a direction of a polarization axis of the ferroelectric film; forming a first interlayer insulating film covering a surface of the first substrate and the capacitor; forming a transistor on a second substrate, the transistor including a ate electrode and a diffusion region; forming a second interlayer insulating film covering a surface of the second substrate and the transistor; flattening surfaces of the first and second interlayer insulating films by chemical mechanical polishing; integrating the first and second substrates by joining the flattened surfaces of the first and second interlayer insulating films; and removing the first substrate.
1. A method of manufacturing a semiconductor device including a capacitor including a pair of electrodes and a ferroelectric film with ferroelectricity sandwiched therebetween, the method comprising the steps of:
(a) depositing the ferroelectric film on a first substrate;
(b) forming the capacitor by grinding the ferroelectric film and forming the electrodes so that the electrodes are perpendicular to a direction of a polarization axis of the ferroelectric film;
(c) forming a first interlayer insulating film covering a surface of the first substrate and the capacitor;
(d) forming a transistor on a second substrate, the transistor including a gate electrode and a diffusion region;
(e) forming a second interlayer insulating film covering a surface of the surface of the second substrate and the transistor;
(f) flattening surfaces of the first and second interlayer insulating films by chemical mechanical polishing;
(g) integrating the first and second substrates by joining the flattened surfaces of the first and second interlayer insulating film; and
(h) removing the first substrate.
2. The method as claimed in claim 1 , wherein the first substrate employs one of a (100) surface and a (010) surface thereof as a main surface.
3. The method as claimed in claim 2 , wherein the first substrate has an inclination with an offset angle from the one of the (100) surface and the (010) surface thereof.
4. The method as claimed in claim 2 , wherein the first substrate comprises MgO, SrTiO 3 , α-Al 2 O 3 , or MgAl 2 O 4 .
5. The method as claimed in claim 1 , wherein:
a buffer layer is formed on the first substrate;
the first substrate comprises a Si substrate; and
the buffer layer comprises a MgO layer, an yttrium-stabilized ZrO 2 layer, a SrTiO 3 layer, a MgAl 2 O 4 layer, or a CaO layer.
6. The method as claimed in claim 5 , wherein:
an additional buffer layer is formed on the buffer layer;
the buffer layer comprises MgO layer; and
the additional buffer layer comprises a SrRuO 3 layer, a YBa 2 Cu 3 O 7−δ layer, or a La 2−x Sr x CuO 4 layer.
7. The method as claimed in claim 1 , wherein:
a buffer layer is formed one first substrate;
the first substrate comprises a Si substrate; and
the buffer layer comprises a SrRuO 3 layer, a YBa 2 Cu 3 O 7−δ layer, or a La 2−x Sr x CuO 4 layer.