IP Library Granted Patent US 6,944,201
Granted Patent B2
US 6,944,201 · App. 10/250,670 · Granted Sep 13, 2005

Compact ultra fast laser

Assignee: High Q Laser Production GmbH
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Quick Facts
Patent No.
US 6,944,201
App. No.
10/250,670
Granted
Sep 13, 2005
Kind
B2
Abstract

The solid state laser comprises a laser gain medium ( 1 ), pumping means for pumping the laser gain medium, and a laser cavity having a first end ( 3 ) and a second end ( 17 ), wherein the laser gain medium is at, or in the vicinity of, said first end ( 3 ) of said cavity. A semiconductor saturable absorber mirror (SESAM) can be placed at the second end ( 17 ) of the cavity. The laser gain medium can comprise at least one face for receiving pumping energy from the pumping means, the face being made reflective at a laser frequency of the laser, so that it can form the first end of the laser cavity. The resulting setup used for generating femtosecond laser pulses.

Claims (76)

1. A solid state laser comprising:

a laser gain medium ( 1 );

pumping means for pumping said laser gain medium ( 1 );

a laser cavity; and

a beam influencing system (B) with a semiconductor saturable absorber mirror ( 17 ), wherein

said beam influencing system (B) is located between said laser gain medium ( 1 ) and a first end of said laser cavity and

said beam influencing system (B) comprises at least two prisms ( 18 , 18 ′) or a telescope.

2. The solid state laser according to claim 1 , wherein

said beam influencing system (B) comprises said two prisms ( 18 , 18 ′);

said semiconductor saturable absorber mirror ( 17 ) is located at one end of said laser cavity; and

said laser cavity comprises a telescope, wherein said prism pair ( 18 , 18 ′) is followed by said telescope.

3. The solid state laser according to claim 1 , wherein a laser mode within said beam influencing system (B) is convergent in a sense that at least one diameter of the cross section of said laser mode is decreasing towards said semiconductor saturable absorber mirror ( 17 ).

4. The solid state laser according to claim 1 , wherein said beam influencing system (B) comprises at least a dispersive mirror structure ( 18 ″), such as a Gires-Toumois Interferometer or a multiplayer dielectric mirror.

5. The solid state laser according to claim 1 , wherein said beam influencing system (B) is at, or in the vicinity of, said first end.

6. The solid state laser according to claim 1 , wherein said laser gain medium ( 1 ) is at, or in the vicinity of, a second end of said laser cavity.

7. The solid state laser according to claim 1 , wherein said laser cavity is folded by highly reflective mirror means ( 13 , 13 ′) and/or by at least one dispersive mirror structure ( 18 ″) for integration in a compact setup application.

8. The solid state laser according to claim 7 , wherein

said laser gain medium ( 1 ) comprises a Brewster face ( 3 ′) and

said mirror means ( 13 , 13 ′) and/or said at least one mirrors structure ( 18 ″) define a folded part of said cavity and

said gain medium ( 1 ) is orientated with said Brewster face ( 3 ′) looking away from said folded part.

9. The solid state laser according to claim 1 , wherein said laser gain medium ( 1 ) comprises at least a first face ( 3 ) for receiving pumping energy from said pumping means, said first face ( 3 ) being made reflective at a laser frequency of said laser, whereby said laser gain medium ( 1 ) forms said second end.

10. The solid state laser according to claim 9 , wherein said first face ( 3 ) is a flat face of a flat-Brewster-cut laser gain medium ( 1 ).

11. The solid state laser according to claim 9 , wherein said laser gain medium ( 1 ) comprises a second face and said pumping means comprise:

a first part with a first pumping source ( 4 ) and

a second part,

said first pumping source ( 4 ) producing a first pumping beam at said first face ( 3 ) and said second part producing a second pumping beam at said second face.

12. The solid state laser according to claim 11 , wherein the second part comprises a second pumping source ( 7 ) or a reflective element ( 7 ′), said reflective element ( 7 ′) reflecting said first pumping beam after a passage of said laser gain medium ( 1 ) as said second pumping beam at said second face.

13. The solid state laser according to claim 12 , wherein after said passage of said laser gain medium ( 1 ) said first pumping beam is collimated or is focused on said reflective element ( 7 ′).

14. The solid state laser according to claim 11 , wherein said second part comprises a second optical path from said second pumping source ( 7 ) or said reflective element ( 7 ′) to said laser gain medium ( 1 ), said second optical path comprising:

a prism element ( 9 ) and a dichroic mirror ( 11 ) or

a prism element ( 9 ′) with a reflecting face.

15. The solid state laser according to claim 14 , wherein said second optical path comprises a second collimating lens ( 8 ) and a second focusing lens ( 10 ).

16. The solid state laser according to claim 9 , comprising a first collimating lens ( 6 ) and a first focusing lens ( 6 ′) to re-image said first pumping beam into said laser gain medium ( 1 ), with a working distance between said first focusing lens ( 6 ′) and said first face ( 3 ) less than 50 mm.

17. The solid state laser according to claim 9 , wherein a first optical path from a said first pumping source ( 4 ) to said laser gain medium ( 1 ) is on the order of 10 centimeters or less.

18. The solid state laser according to claim 1 , wherein at least one beam spot produced by said pumping means is located within said laser gain medium ( 1 ).

19. The solid state laser according to claim 1 , wherein said laser cavity is a femtosecond cavity.

20. The solid state laser according to claim 1 , wherein said laser gain medium ( 1 ) has a composition taken from the group comprising: Nd:glass, Cr:LiSAF, Yb:glass, Yb:YAG, Yb:KGW.

21. The solid state laser according to claim 1 , wherein said laser gain medium ( 1 ) has a composition having a gain equal to or smaller than a gain obtained from the composition Nd:YAG or Yb:YAG, with said gain to be determined as the product of the stimulated emission cross section and the upper laser level life time.

22. The solid state laser according to claim 1 , wherein said laser gain medium ( 1 ) is a broad emission band laser material suitable for femtosecond laser generation.

23. The solid state laser according to claim 6 , wherein said laser gain medium ( 1 ) has a mode radius on the order of 30 microns×45 microns.

24. The solid state laser according to claim 1 , wherein the pumping means have a pump intensity equal to or greater than 10 kW per square centimeter.

25. The solid state laser according to claim 1 , further comprising a first curved mirror ( 12 ) at an output of said laser gain medium ( 1 ) arranged to re-image and cavity mode into a waist ( 14 ).

26. The solid state laser according to claim 1 , further comprising a second curved mirror ( 15 ) between said waist ( 14 ) and said first end.

27. The solid state laser according to claim 26 , wherein a distance between said second curved mirror ( 15 ) and said first end is on the order of 40 centimeters or longer.

28. The solid state laser according to claim 26 , wherein said beam influencing system (B) is located between said second curved mirror ( 15 ) and said first end.

29. The solid state laser according to claim 1 , wherein said semiconductor saturable absorber mirror ( 17 ) is a layered structure comprising:

a plurality of alternating layers ( 43 ) of gallium arsenide and a aluminum arsenide or aluminum gallium arsenide, each layer having a thickness corresponding substantially to one quarter wavelength,

a substrate ( 48 ) of gallium arsenide at a first layer face of said plurality of alternating layers ( 43 ),

a structure ( 44 ) of gallium arsenide of aluminum gallium arsenide integrating an absorber layer ( 47 ) at a second layer face of said plurality of alternating layers ( 43 ), and

a plurality of dielectric layers ( 45 , 46 ) at a face of said structure ( 44 ) opposite the one in contact with said second face,

whereby the overall structure show resonant behaviour.

30. A method for generating femtosecond laser pulses using the solid slate laser of claim 1 , comprising pumping said laser gain medium by said pumping means.

31. A method for continuous wave or Q-switched laser operation using the solid state laser of claim 1 , comprising pumping said laser gain medium using said pumping means.

32. A semiconductor saturable absorber mirror ( 17 ) for a solid-state laser, particularly for a solid state laser according to claim 1 , said semiconductor saturable absorber mirror ( 17 ) having a layered structure comprising:

a plurality of alternating layers ( 43 ) of gallium arsenide and aluminum arsenide or aluminum gallium arsenide, each layer having a thickness corresponding substantially at one quarter wavelength,

a substrate ( 48 ) of gallium arsenide at a first layer face of said plurality of alternating layers ( 43 ),

a structure ( 44 ) of gallium arsenide or aluminum gallium arsenide integrating an absorber layer ( 47 ) at a second layer fare of said plurality of alternating layers 43 ), and

a plurality of dielectric layers ( 45 , 46 ) at a face of said structure ( 44 ) opposite the one in contact with said second face, wherein said dielectric layers ( 45 , 46 ) have a reversed order in terms of their index of refraction, with respect to the order of the refractive indexes of the layers underneath, thereby forming a resonant structure,

whereby the overall structure shows resonant behaviour.

33. The semiconductor saturable absorber mirror ( 17 ) according to claim 32 , wherein said plurality of alternating layers ( 43 ) is on the order of 30 in number.

34. The semiconductor saturable absorber mirror ( 17 ) according to claim 32 , wherein each of said plurality of alternating layers ( 43 ) as a thickness respectively of approximately 72.3 nanometers and approximately 88 nanometers.

35. The semiconductor saturable absorber mirror ( 17 ) according to claim 32 , wherein a totally optical thickness of said structure ( 44 ) corresponds to half a wavelength.

36. The semiconductor saturable absorber mirror ( 17 ) according to claim 32 , wherein said dielectric layers ( 45 , 46 ) are three or more in number.

37. A solid state laser comprising:

a laser gain medium,

pumping means for pumping said laser gain medium,

a semiconductor saturable absorber mirror located towards a first end of said cavity,

a first curved mirror at an output of said laser gain medium arranged to re-image a cavity mode into a waist:

a second curved mirror between said waist and a second end of said cavity; and

a prism pair between said second curved mirror and said second end of said cavity for group velocity dispersion compensation.

38. The solid state laser according to claim 12 , wherein said second part comprises a second optical path from said second pumping source ( 7 ) or said reflective element ( 7 ′) to said laser gain medium ( 1 ), said second optical path comprising

a prism element ( 9 ) and a dichroic mirror ( 11 ) or

a prism element ( 9 ′) with a reflecting face.

39. The solid state laser according to claim 13 , wherein said second part comprises a second optical path from said second pumping source ( 7 ) or said reflective element ( 7 ′) to said laser gain medium ( 1 ), said second optical path comprising

a prism element ( 9 ) and a dichroic mirror ( 11 ) or

a prism element ( 9 ′) with a reflecting face.

Assignments (3)
CHANGE OF NAME Recorded Nov 26, 2012
From: HIGH Q TECHNOLOGIES GMBH
To: HIGH Q LASER GMBH
Reel/Frame 029406/0577 →
MERGER Recorded Nov 26, 2012
From: HIGH Q LASER PRODUCTION GMBH
To: HIGH Q TECHNOLOGIES GMBH
Reel/Frame 029406/0595 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 6, 2003
From: BUNTING, UDO; KOPF, DANIEL
To: HIGH Q LASER PRODUCTION GMBH
Reel/Frame 013856/0801 →
Continuity (4)
Continuation In Part 0976816700 · Jan 24, 2001
Continuation 0948996400 · Jan 24, 2000
Provisional Application 6014647200 · Jul 30, 1999
Related Publication 20040047387A1 · Mar 11, 2004