Forming method of contact in semiconductor device and manufacturing method of PMOS device using the same
The present invention provides a manufacturing method of a contact for use in a semiconductor device and a manufacturing method of a PMOS device using the same, which can obtain an electrical characteristic of a low contact resistance similar to a mixed implantation of 49 BF 2 + ions and 11 B + ions and reduce a manufacturing cost. The method for forming a contact of a semiconductor device includes: the steps of: forming an insulating layer on a conductive semiconductor layer; forming a contact hole within the insulating layer to expose a portion of the conductive semiconductor layer; forming a plug implantation region by implanting 30 BF + ions into the exposed conductive semiconductor layer disposed on a bottom of the contact hole; performing an annealing process for activating dopants injected by the implantation of 30 BF + ions; and filling the contact hole with a conductive layer.
1. A method for forming a contact of a semiconductor device, comprising the steps of:
forming an insulating layer on a conductive semiconductor layer, the conductive semiconductor layer having a source/drain region formed by implanting one of 49 BF 2 + ions, mixed ions of 49 BF 2 + and 11 B + , and 30 BF + ions into the conductive semiconductor layer;
forming a contact hole within the insulating layer to expose a partial area of the source/drain region;
forming a plug implantation region by implanting 30 BF + ions into the partial area of the source/drain region;
performing an annealing process for activating dopants injected by the implantation of 30 BF + ions; and
filling the contact hole with a conductive layer.
2. The method as recited in claim 1 , wherein the conductive semiconductor layer includes a gate electrode.
3. The method as recited in claim 1 , wherein the annealing process is carried out at a temperature of about 650° C. to about 1150° C.
4. The method as recited in claim 1 , wherein an amount of 30 BF + ions to be implanted at the step of forming the plug implantation region is about 1×10 15 ions/cm2 to about 5×10 15 ions/cm2.
5. A method for forming a contact of a semiconductor device, comprising the steps of:
forming an insulating layer on a conductive semiconductor layer, the conductive semiconductor layer having a source/drain region formed by implanting one of 49 BF 2 + ions, mixed ions of 49 BF 2 + and 11 B + , and 30 BF + ions into the conductive semiconductor layer;
forming a contact hole within the insulating layer to expose a partial area of the source/drain region;
forming a plug implantation region by implanting 30 BF + ions into the partial area of the source/drain region;
forming a metal layer within the contact hole and on a portion of a surface of the insulating layer and forming a diffusion preventing metal layer on the metal layer;
forming a silicide layer contacted with the plug implantation region by performing an annealing process and simultaneously activating dopants implanted into the plug implantation region; and
filling the contact hole with a conductive layer.
6. The method as recited in claim 5 , wherein the silicide layer is formed by performing the annealing process at a temperature of about 650° C. to about 900° C.
7. The method as recited in claim 5 , wherein the conductive semiconductor layer includes a gate electrode.
8. The method as recited in claim 5 , wherein an amount of 30 BF + ions to be implanted at the step of forming the plug implantation region is about 1×10 15 ions/cm2 to about 5×10 15 ions/cm2.
9. A method for manufacturing a P-type metal oxide semiconductor (PMOS) device, comprising the steps of:
forming a P-type source/drain region on a semiconductor substrate by implanting one of 49 BF 2 + ions, mixed ions of 49 BF 2 + and 11B + , and 30 BF + ions into the semiconductor substrate;
forming an insulating layer on the semiconductor substrate covering an exposed portion of the P-type source/drain region;
etching the insulating layer to form a contact hole exposing a partial area of the P-type source/drain region;
implanting 30 BF + ions into the partial area of the P-type source/drain region to form a plug implantation region;
forming a diffusion preventing metal layer within the contact hole and on a portion of the insulating layer; and
forming a metal interconnection electrically connected to the P-type source/drain region on the diffusion preventing metal layer.
10. The method as recited in claim 9 , wherein an amount of 30 BF + ions to be implanted at the step of forming the plug implantation region is about 1×10 15 ions/cm2 to about 5×10 15 ions/cm2.
11. The method as recited in claim 9 , after the step of implanting 30 BF + ions, further comprising the step of electrically activating dopants implanted into the P-type source/drain region by performing an annealing process.
12. The method as recited in claim 11 , wherein the annealing process is carried out at a temperature of about 650° C. to about 1150° C.