Integrated circuit cells
According to one embodiment of the invention, a method for designing an integrated circuit is provided. The method includes providing a first transistor in a first logic path. The first transistor has a first contact, a first gate length and a first contact to gate centerline spacing. The method also includes providing a second transistor in a second logic path. The second transistor has a second contact, a second gate length and a second contact to gate centerline spacing. The first contact to gate centerline spacing is substantially equal to the second contact to gate centerline spacing. The method also includes selecting a different gate length for the first gate length using a predetermined design criterion.
1. A method for designing an integrated circuit, comprising:
providing a first transistor in a first logic path, the first transistor having a first contact, a first gate length and a first contact to gate centerline spacing;
providing a second transistor in a second logic path, the second transistor having a second contact, a second gate length and a second contact to gate centerline spacing, the first contact to gate centerline spacing substantially equal to the second contact to gate centerline spacing; and
selecting a different gate length for the first gate length using a predetermined design criterion.
2. The method of claim 1 , wherein the first gate length and the second gate length are equal, and selecting a different gate length comprises selecting a different gate length without changing the placement of the first contact or the second contact.
3. The method of claim 2 , wherein providing a first transistor comprises providing a first cell comprising the first transistor and wherein selecting a different gate length comprises replacing the first cell with a substitute cell comprising a substitute transistor, the substitute transistor having a different gate length than the first gate length, the first cell and the substitute cell having the same footprint and operable to perform a same function.
4. The method of claim 1 , wherein the predetermined design criterion is based on the respective levels of leakage current of the first transistor and the second transistor.
5. The method of claim 1 , wherein the first logic path is a critical path and the different gate length is a gate length that is shorter than the first gate length.
6. The method of claim 1 , wherein the first logic path is a non-critical path and the different gate length is a gate length that is longer than the first gate length.
7. The method of claim 1 , wherein modeling a change of the gate length comprises changing the gate length by a length increment, the length increment less than the length of one grid of a design rule for the integrated circuit.