Gallium nitride semiconductor light emitting device having multi-quantum-well structure active layer, and semiconductor laser light source device
A gallium nitride semiconductor laser device has an active layer ( 6 ) made of a nitride semiconductor containing at least indium and gallium between an n-type cladding layer ( 5 ) and a p-type cladding layer ( 9 ). The active layer ( 6 ) is composed of two quantum well layers ( 14 ) and a barrier layer ( 15 ) interposed between the quantum well layers, and constitutes an oscillating section of the semiconductor laser device. The quantum well layers ( 14 ) and the barrier layer ( 15 ) have thicknesses of, preferably, 10 nm or less. In this semiconductor laser device, electrons and holes can be uniformly distributed in the two quantum well layers ( 14 ). In addition, electrons and holes are effectively injected into the quantum well layers from which electrons and holes have already been disappeared by recombination. Consequently, the semiconductor laser device has an excellent laser oscillation characteristic.
1. A gallium nitride semiconductor laser device having emission wavelengths within a band corresponding to ultraviolet to green, comprising a semiconductor substrate, an active layer having a quantum well structure and made of nitride semiconductor containing at least indium and gallium, and a first cladding layer and a second cladding layer for sandwiching the active layer therebetween,
wherein the active layer consists of two to four quantum well layers and one to three barrier layers each interposed between the quantum well layers, and the one or each barrier layer has a layer thickness of 4 nm or less, and the active layer forms an oscillating section of the semiconductor laser device, and
wherein the semiconductor laser device is a self-oscillating semiconductor laser device.
2. A gallium nitride semiconductor laser device having emission wavelengths within a band corresponding to ultraviolet to green, comprising a semiconductor substrate, an active layer having a quantum well structure and made of a nitride semiconductor containing at least indium and gallium, and a first cladding layer and a second cladding layer for sandwiching the active layer therebetween,
wherein the active layer forms an oscillating section of the semiconductor laser device and consists of two to four quantum well layers and one to three barrier layers each interposed between the quantum well layers, and one or more of the barrier layers has a layer thickness of 4 nm or less, and
wherein the semiconductor laser device is a self-oscillating semiconductor laser device.
3. A gallium nitride semiconductor laser device having emission wavelengths within a band corresponding to ultraviolet to green and having a ridge structure, comprising:
an active layer having a quantum well structure and made of nitride semiconductor containing at least indium and gallium; and
an n-type cladding layer and a p-type cladding layer between which the active layer is disposed, said p-type cladding layer forming at least part of the ridge structure, wherein the active layer forms an oscillating section of the semiconductor laser device, and consists of two to four quantum well layers and one to three barrier layers each interposed between the quantum well layers, and the one or each barrier layer has a layer thickness of 4 nm or less, and
wherein the p-type cladding layer forms at least part of the ridge structure.
4. A gallium nitride semiconductor laser device having emission wavelengths within a band corresponding to ultraviolet to green, comprising a semiconductor substrate, an active layer having a quantum well structure and made of nitride semiconductor containing at least indium and gallium, and a first cladding layer and a second cladding layer for sandwiching the active layer therebetween,
wherein the active layer forms an oscillating section of the semiconductor laser device, and consists of two to four quantum well layers and one to three barrier layers each interposed between the quantum well layers, and the one or each barrier layer has a layer thickness of 4 nm or less, and
wherein one of the first and second cladding layers is a p-type cladding layer, and the p-type cladding layer has a ridge portion and a planar portion on opposite sides of the ridge portion.
5. The gallium nitride semiconductor laser device according to claim 4 , wherein the ridge has a width of about 1 μm to 5 μm.
6. The gallium nitride semiconductor laser device according to claim 4 , wherein said planar portion has a film thickness of 0.05 μm to 0.5 μm.
7. The gallium nitride semiconductor laser device according to claim 4 , wherein each of the quantum well layers has electrons and holes uniformly distributed therein.
8. The gallium nitride semiconductor laser device according to claim 4 , wherein the semiconductor laser device is a self-oscillating semiconductor laser device.
9. The gallium nitride semiconductor laser device according to claim 4 , wherein said layer device generates a modulated optical output when an electric current is injected thereinto.
10. The gallium nitride semiconductor laser device according to claim 4 , further comprising a driving circuit for injecting an electric current into the semiconductor laser device.
11. The gallium nitride semiconductor laser device according to claim 10 , wherein the electric current is a modulated current and a modulation frequency of the current is 300 MHz or more.