Method for controlling deposition of dielectric films
A method for controlling stoichiometry of dielectric films, e.g., BST films, preferably formed at low deposition temperatures. A deposition process may use an adjustment in oxidizer flow and/or partial pressure, the provision of a hydrogen-containing component, an adjustment in hydrogen-containing component flow and/or partial pressure, an adjustment in deposition pressure, and/or a modification of system component parameters (e.g., heating a shower head or adjusting a distance between a shower head of the deposition system and a wafer upon which the film is to be deposited), to control the characteristics of the dielectric film, e.g., film stoichiometry.
1. A method for depositing a film, the method comprising:
providing a substrate assembly having a surface in a deposition chamber at a temperature less than 680° C., wherein the deposition chamber comprises a delivery device having a delivery outlet region from which one or more organometallic precursors are delivered to within the deposition chamber;
providing a barium-containing organometallic precursor, a strontium-containing organometallic precursor, and a titanium-containing organometallic precursor to the deposition chamber; and
forming a barium-strontium-titanate film on at least a portion of the surface using the barium-containing organometallic precursor, the strontium-containing organometallic precursor, and the titanium-containing organometallic precursor provided to the deposition chamber, wherein forming the barium-strontium-titanate film comprises forming at least a first layer of the barium-strontium-titanate film having a first composition and forming at least a second layer of the barium-strontium-titanate film having a second composition; and
adjusting a distance between the delivery outlet region of the delivery device and the surface of the substrate assembly during formation of the barium-strontium-titanate film such that composition of the barium-strontium-titanate film is adjusted from the first composition to the second composition.
2. The method of claim 1 , wherein the distance is adjusted while a flow rate of the barium-containing organometallic precursor, the strontium-containing organometallic precursor, and the titanium-containing organometallic precursor to the deposition chamber is maintained.
3. The method of claim 1 , wherein the method further comprises adjusting a temperature of at least the delivery outlet region of the delivery device during formation of the barium-strontium-titanate film while the flow rate of the barium-containing organometallic precursor, the strontium-containing organometallic precursor, and the titanium-containing organometallic precursor to the deposition chamber is maintained.
4. The method of claim 1 , wherein the first layer of the barium-strontium-titanate film is an interfacial layer and the second layer of the barium-strontium-titanate film is a bulk layer, wherein the interfacial layer has an atomic percent of titanium less than or equal to the atomic percent of titanium in the bulk layer of the barium-strontium-titanate film.
5. The method of claim 1 , wherein providing a substrate assembly having a surface in a deposition chamber comprises maintaining the temperature of the substrate assembly in the range of about 400° C. to 550° C.
6. The method of claim 1 , wherein the method further comprises adjusting a deposition pressure of the deposition chamber during formation of the barium-strontium-titanate film while the flow rate of the barium-containing organometallic precursor, the strontium-containing organometallic precursor, and the titanium-containing organometallic precursor to the deposition chamber is maintained.
7. A method for depositing a film, the method comprising:
providing a substrate assembly having a surface in a deposition chamber at a temperature less than 680° C.;
providing a barium-containing organometallic precursor, a strontium-containing organometallic precursor, a titanium-containing organometallic precursor, and an oxidizer to the deposition chamber;
forming a barium-strontium-titanate film on at least a portion of the surface using the barium-containing organometallic precursor, the strontium-containing organometallic precursor, the titanium-containing organometallic precursor, and the oxidizer provided to the deposition chamber, wherein forming the barium-strontium-titanate film comprises forming at least a first layer of the barium-strontium-titanate film having a first composition and forming at least a second layer of the barium-strontium-titanate film having a second composition; and
adjusting a deposition pressure of the deposition chamber during formation of the barium-strontium-titanate film while a flow rate of the barium-containing organometallic precursor, the strontium-containing organometallic precursor, and the titanium-containing organometallic precursor to the deposition chamber is maintained such that composition of the barium-strontium-titanate film is adjusted from the first composition to the second composition, wherein an increase in deposition pressure results in an increase in percent titanium in the barium-strontium-titanate film and also an increase in a rate of deposition of the barium-strontium-titanate film.
8. The method of claim 7 , wherein providing the substrate assembly in the deposition chamber comprises providing a deposition chamber including a delivery device having a delivery outlet region, wherein the method further comprises adjusting a distance between the delivery outlet region of the delivery device and the surface of the substrate assembly during formation of the barium-strontium-titanate film while the flow rate of the barium-containing organometallic precursor, the strontium-containing organometallic precursor, and the titanium-containing organometallic precursor to the deposition chamber is maintained.
9. The method of claim 7 , wherein providing the substrate assembly in the deposition chamber comprises providing a deposition chamber including a delivery device having a delivery outlet region, wherein the method further comprises adjusting a temperature of at least the delivery outlet region of the delivery device during formation of the barium-strontium-titanate film while the flow rate of the barium-containing organometallic precursor, the strontium-containing organometallic precursor, and the titanium-containing organometallic precursor to the deposition chamber is maintained.
10. A method for use in formation of a capacitor, the method comprising:
providing a first electrode having a surface in a deposition chamber at a temperature less than 680° C., wherein the deposition chamber comprises a delivery device having a delivery outlet region from which one or more organometallic precursors are delivered to within the deposition chamber;
forming a barium-strontium-titanate dielectric film on at least a portion of the surface of the first electrode, wherein forming the barium-strontium-titanate film comprises:
providing a barium-containing organometallic precursor, a strontium-containing organometallic precursor, and a titanium-containing organometallic precursor to the deposition chamber, and
depositing a barium-strontium-titanate film on at least a portion of the surface using the barium-containing organometallic precursor, the strontium-containing organometallic precursor, and the titanium-containing organometallic precursor, wherein depositing the barium-strontium-titanate film comprises forming at least a first layer of the barium-strontium-titanate film having a first composition and forming at least a second layer of the barium-strontium-titanate film having a second composition, and
adjusting a distance between the delivery outlet region of the delivery device and the surface of the substrate assembly during formation of the barium-strontium-titanate film such that composition of the barium-strontium-titanate film is adjusted from the first composition to the second composition; and
forming a second electrode on at least a portion of the barium-strontium-titanate dielectric film.
11. The method of claim 10 , wherein the distance is adjusted while a flow rate of the barium-containing organometallic precursor, the strontium-containing organometallic precursor, and the titanium-containing organometallic precursor to the deposition chamber is maintained.
12. The method of claim 10 , wherein the method further comprises adjusting a temperature of at least the delivery outlet region of the delivery device during formation of the barium-strontium-titanate film while the flow rate of the barium-containing organometallic precursor, the strontium-containing organometallic precursor, and the titanium-containing organometallic precursor to the deposition chamber is maintained.
13. The method of claim 10 , wherein the first layer of the barium-strontium-titanate film is an interfacial layer and the second layer of the barium-strontium-titanate film is a bulk layer, wherein the interfacial layer has an atomic percent of titanium less than or equal to the atomic percent of titanium in the bulk layer of the barium-strontium-titanate film.
14. The method of claim 10 , wherein the method further comprises adjusting a deposition pressure of the deposition chamber during formation of the barium-strontium-titanate film while the flow rate of the barium-containing organometallic precursor, the strontium-containing organometallic precursor, and the titanium-containing organometallic precursor to the deposition chamber is maintained.
15. A method for use in formation of a capacitor, the method comprising:
providing a first electrode having a surface in a deposition chamber at a temperature less than 680° C.;
forming a barium-strontium-titanate dielectric film on at least a portion of the surface of the first electrode, wherein forming the barium-strontium-titanate film comprises:
providing a barium-containing organometallic precursor, a strontium-containing organometallic precursor, a titanium-containing organometallic precursor, and an oxidizer to the deposition chamber,
forming a barium-strontium-titanate film on at least a portion of the first electrode surface using the barium-containing organometallic precursor, the strontium-containing organometallic precursor, the titanium-containing organometallic precursor, and the oxidizer provided to the deposition chamber, wherein forming the barium-strontium-titanate film comprises forming at least a first layer of the barium-strontium-titanate film having a first composition and forming at least a second layer of the barium-strontium-titanate film having a second composition, and
adjusting a deposition pressure of the deposition chamber during formation of the barium-strontium-titanate film such that composition of the barium-strontium-titanate film is adjusted from the first composition to the second composition, wherein an increase in deposition pressure results in an increase in percent titanium in the barium-strontium-titanate film and also an increase in a rate of deposition of the barium-strontium-titanate film; and
forming a second electrode on at least a portion of the barium-strontium-titanate dielectric film.
16. The method of claim 15 , wherein the deposition pressure is adjusted while a flow rate of the barium-containing organometallic precursor, the strontium-containing organometallic precursor, and the titanium-containing organometallic precursor to the deposition chamber is maintained.
17. The method of claim 15 , wherein providing the oxidizer to the deposition chamber comprises providing at least one of O 2 , O 3 , N 2 O, NO, SO 3 , H 2 O 2 , R 2 O 2 to the deposition chamber, where R is selected from a group consisting of a saturated or unsaturated linear, branched, or cyclic hydrocarbon group having about 1 carbon atom to about 20 carbon atoms, preferably about 2 carbon atoms to about 12 carbon atoms, for example, methyl, ethyl, isopropyl, t-butyl, heptyl, dodecyl, octadecyl, amyl, 2-ethylhexyl, and the like.
18. The method of claim 15 , wherein the first layer of the barium-strontium-titanate film is an interfacial layer and the second layer of the barium-strontium-titanate film is a bulk layer, wherein the interfacial layer has an atomic percent of titanium less than or equal to the atomic percent of titanium in the bulk layer of the barium-strontium-titanate film.
19. The method of claim 15 , wherein the deposition chamber comprises a delivery device having a delivery outlet region, wherein the method further comprises adjusting a distance between the delivery outlet region of the delivery device and the surface of the substrate assembly during formation of the barium-strontium-titanate film while the flow rate of the barium-containing organometallic precursor, the strontium-containing organometallic precursor, and the titanium-containing organometallic precursor to the deposition chamber is maintained.
20. The method of claim 15 , wherein the deposition chamber comprises a delivery device having a delivery outlet region, wherein the method further comprises adjusting a temperature of at least the delivery outlet region of the delivery device during formation of the barium-strontium-titanate film while the flow rate of the barium-containing organometallic precursor, the strontium-containing organometallic precursor, and the titanium-containing organometallic precursor to the deposition chamber is maintained.
21. A method of forming a titanium-containing dielectric film comprising:
providing a substrate assembly having a surface in a deposition chamber at a temperature less than 680° C., wherein the deposition chamber comprises a delivery device having a delivery outlet region;
providing a barium-containing organometallic precursor, a strontium-containing organometallic precursor, a titanium-containing organometallic precursor, and an oxidizer to the deposition chamber; and
depositing a barium-strontium-titanate film on at least a portion of the surface using the barium-containing organometallic precursor, the strontium-containing organometallic precursor, the titanium-containing organometallic precursor, and the oxidizer provided to the deposition chamber; and
decreasing a distance between the delivery outlet region of the delivery device and the surface of the substrate assembly during the deposition of the barium-strontium-titanate film to increase the percent titanium in the barium-strontium-titanate film.
22. The method of claim 21 , wherein the distance is decreased while the flow rate of the barium-containing organometallic precursor, the strontium-containing organometallic precursor, and the titanium-containing organometallic precursor to the deposition chamber is maintained.
23. The method of claim 21 , wherein the method further comprises adjusting a deposition pressure of the deposition chamber during formation of the barium-strontium-titanate film while the flow rate of the barium-containing organometallic precursor, the strontium-containing organometallic precursor, and the titanium-containing organometallic precursor to the deposition chamber is maintained to increase a rate of depositing the barium-strontium-titanate film.
24. A method for depositing a dielectric film, the method comprising:
providing a substrate assembly having a surface in a deposition chamber at a temperature less than 680° C.;
providing a plurality of precursors comprising A and B to the deposition chamber having the substrate assembly positioned therein to deposit a film of ABO 3 on at least a portion of the surface of the substrate assembly, wherein the deposition chamber comprises a delivery device having a delivery outlet region from which one or more precursors are delivered to within the deposition chamber; and
adjusting a distance between the delivery outlet region of the delivery device and the surface of the substrate assembly during deposition of the ABO 3 film to produce different concentrations of one of A and B at different elevations in the ABO 3 film.
25. The method of claim 24 , wherein the distance is adjusted while maintaining a flow rate of the precursors comprising A and B provided to the deposition chamber.
26. The method of claim 24 , wherein the precursors comprising A and B include a barium-containing organometallic precursor, a strontium-containing organometallic precursor, and a titanium-containing organometallic precursor.
27. The method of claim 24 , wherein the different concentrations include a concentration in a first layer of the ABO 3 film that is different from a concentration of a second layer of the ABO 3 film.
28. The method of claim 24 , wherein the different concentrations are a gradient in concentrations in a portion of the ABO 3 film.
29. The method of claim 24 , wherein the method further comprises adjusting a temperature of at least the delivery outlet region of the delivery device during formation of the ABO 3 film.
30. The method of claim 24 , wherein the method further comprises adjusting a deposition pressure of the deposition chamber during formation of the ABO 3 film.
31. A method for depositing a dielectric film, the method comprising:
providing a substrate assembly having a surface in a deposition chamber at a temperature less than 680° C.;
providing a plurality of precursors comprising A and B to the deposition chamber having the substrate assembly positioned therein to deposit a film of ABO 3 on at least a portion of the surface of the substrate assembly along with an oxidizer; and
adjusting a deposition pressure of the deposition chamber during deposition of the ABO 3 film to produce different concentrations of one of A and B at different elevations in the ABO 3 film while maintaining a flow rate of the precursors comprising A and B provided to the deposition chamber, wherein an adjustment in deposition pressure also results in an adjustment to a rate of deposition of the ABO 3 film.
32. The method of claim 31 , wherein the precursors comprising A and B include a barium-containing organometallic precursor, a strontium-containing organometallic precursor, and a titanium-containing organometallic precursor.
33. The method of claim 31 , wherein the different concentrations include a concentration in a first layer of the ABO 3 film that is different from a concentration of a second layer of the ABO 3 film.
34. The method of claim 31 , wherein the different concentrations are a gradient in concentrations in a portion of the ABO 3 film.
35. The method of claim 31 , wherein providing the substrate assembly in the deposition chamber comprises providing a deposition chamber including a delivery device having a delivery outlet region, wherein the method further comprises adjusting a distance between the delivery outlet region of the delivery device and the surface of the substrate assembly during formation of the ABO 3 film.
36. The method of claim 31 , wherein providing the substrate assembly in the deposition chamber comprises providing a deposition chamber including a delivery device having a delivery outlet region, wherein the method further comprises adjusting a temperature of at least the delivery outlet region of the delivery device during formation of the ABO 3 film.