Pulsed bistable bidirectional electronic switch
The invention concerns a pulsed bistable bidirectional electronic switch comprising a monolithic semiconductor circuit formed from a substrate ( 1 ) whereof the rear surface (A 2 ) is coated with a metallization connected to earth. Said circuit comprises a vertical bidirectional switch (T 1 , T 2 ) provided with a first gate terminal (M 3 ), whereof the main electrode (A 1 ) on the side of the front surface is connected to a load and an alternating current supply; a horizontal thyristor (T 3 ) comprising an upper layer ( 4 ) of the vertical bidirectional switch, a first P-type region ( 11 ), and a second N-type region ( 12 ) formed in the first region; a second gate terminal (G 1 ) connected to one of the first and second regions, the other being connected to earth. A capacitor (C) is connected to the first gate terminal (G 3 ) and to the alternating current supply (VAC).
1. A bidirectional switch of pulse-controlled bistable type, including:
a monolithic semiconductor circuit formed from a lightly-doped N-type substrate having a rear surface coated with a metallization connected to a reference voltage, including:
a vertical bidirectional switch structure provided with a first gate terminal, and having its main electrode on the front surface side connected to a load and to an A.C. power supply;
a horizontal thyristor structure including an upper layer of the vertical bidirectional switch, the substrate, a first P-type region formed in the substrate, and a second N-type region formed in the first region;
a second gate terminal connected to one of the first and second regions, the other one of the first and second regions being connected to the reference voltage;
a capacitor connected to the first gate terminal and to the A.C. power supply; and
a switch for short-circuiting the capacitor.
2. The electronic switch of claim 1 , wherein the monolithic semiconductor circuit includes:
an N-type substrate;
on the front surface side:
a third P-type anode region of a vertical thyristor, this third region containing a fourth N-type cathode region of a second vertical thyristor, and a fifth N-type region forming a gate region;
on the rear surface side:
a P-type layer;
in this P-type layer, sixth N-type regions everywhere except at the location of the anode of the second thyristor forming the vertical bidirectional switch structure.
3. The electronic switch of claim 1 , wherein the first region of the horizontal switch structure extends to reach an isolating wall connecting this region to the rear surface.
4. The electronic switch of claim 1 , wherein the switch for short-circuiting the capacitor and the bistable pulse-controlled bidirectional switch are included in a monolithic construction.
5. A bidirectional switch of pulse-controlled bistable type, including:
a monolithic semiconductor circuit formed from a lightly-doped P-type substrate having a rear surface coated with a metallization connected to a reference voltage, including:
a vertical bidirectional switch structure provided with a first gate terminal, and having a main electrode on the front surface side connected to a load and to an A.C. power supply;
a horizontal thyristor structure including an upper layer of the vertical bidirectional switch, the substrate, a first N-type region formed in the substrate, and a second P-type region formed in the first region;
a second gate terminal connected to one of the first and second regions, another one of the first and second regions being connected to the reference voltage;
a capacitor connected to the first gate terminal and to the A.C. power supply; and
a switch for short-circuiting the capacitor.
6. The electronic switch of claim 5 , wherein the monolithic semiconductor circuit includes:
a P-type substrate;
on the front surface side:
a third N-type anode region of a vertical thyristor, this third region containing a fourth P-type cathode region of a second vertical thyristor, and a fifth P-type region forming a gate region;
on the rear surface side:
an N-type layer;
in this N-type layer, sixth P-type regions everywhere except at a location of the anode of the second thyristor forming the vertical bidirectional switch structure.
7. The electronic switch of claim 5 , wherein the first region of the horizontal switch structure extends to reach an isolating wall connecting this region to the rear surface.
8. The electronic switch of claim 5 , wherein the switch for short-circuiting the capacitor and the bistable pulse-controlled bidirectional switch are included in a monolithic construction.
9. A bidirectional switch of pulse-controlled bistable type, including:
a monolithic semiconductor circuit formed from a lightly-doped N-type substrate having a rear surface coated with a metallization comprising:
a vertical bidirectional switch structure provided with a first gate terminal, and having its main electrode on the front surface side;
a horizontal thyristor structure including an upper layer of the vertical bidirectional switch, the substrate, a first P-type region formed in the substrate, and a second N-type region formed in the first region;
a second gate terminal connected to one of the first and second regions;
a capacitor connected to the first gate terminal; and
a switch for short-circuiting the capacitor.
10. The electronic switch of claim 9 , wherein the monolithic semiconductor circuit includes:
an N-type substrate;
on the front surface side:
a third P-type anode region of a vertical thyristor, this third region containing a fourth N-type cathode region of a second vertical thyristor, and a fifth N-type region forming a gate region;
on the rear surface side:
a P-type layer;
in this P-type layer, sixth N-type regions everywhere except at the location of the anode of the second thyristor forming the vertical bidirectional switch structure.
11. The electronic switch of claim 9 , wherein the first region of the horizontal switch structure extends to reach an isolating wall connecting this region to the rear surface.
12. The electronic switch of claim 9 , wherein the switch for short-circuiting the capacitor and the bistable pulse-controlled bidirectional switch are included in a monolithic construction.
13. The electronic switch of claim 9 , wherein the main electrode is connected to a load and to an A.C. power supply.
14. The electronic switch of claim 13 , wherein the rear surface is connected to a reference voltage and wherein one of the first and second regions is connected to the reference voltage.
15. A bidirectional switch of pulse-controlled bistable type, including:
a monolithic semiconductor circuit formed from a lightly-doped P-type substrate having a rear surface coated with a metallization comprising:
a vertical bidirectional switch structure provided with a first gate terminal, and having a main electrode on a front surface side;
a horizontal thyristor structure including an upper layer of the vertical bidirectional switch, the substrate, a first N-type region formed in the substrate, and a second P-type region formed in the first region;
a second gate terminal connected to one of the first and second regions;
a capacitor connected to the first gate terminal; and
a switch for short-circuiting the capacitor.
16. The electronic switch of claim 15 , wherein the monolithic semiconductor circuit includes:
an P-type substrate;
on the front surface side:
a third N-type anode region of a vertical thyristor, this third region containing a fourth P-type cathode region of a second vertical thyristor, and a fifth P-type region forming a gate region;
on the rear surface side:
a N-type layer;
in this N-type layer, sixth P-type regions everywhere except at a location of the anode of the second thyristor forming the vertical bidirectional switch structure.
17. The electronic switch of claim 15 , wherein the first region of the horizontal switch structure extends to reach an isolating wall connecting this region to the rear surface.
18. The electronic switch of claim 15 , wherein the switch for short-circuiting the capacitor and the bistable pulse-controlled bidirectional switch are included in a monolithic construction.
19. The electronic switch of claim 15 , wherein the main electrode is connected to a load and to an A.C. power supply.
20. The electronic switch of claim 19 , wherein the rear surface is connected to a reference voltage and wherein one of the first and second regions is connected to the reference voltage.