Pattern forming method and apparatus for fabricating semiconductor device
A resist film is formed out of a resist material on a substrate, and then pre-baked. Next, the pre-baked resist film is exposed to extreme ultraviolet radiation through a photomask. Then, the exposed resist film is developed, thereby defining a resist pattern on the substrate. The pre-baking and exposing steps are carried out in a vacuum without subjecting the resist film to the air.
1. An apparatus for fabricating a semiconductor device, comprising:
a first processing chamber for forming a resist film on a substrate;
a second processing chamber, being kept in a vacuum state, for pre-baking the resist film; and
a third processing chamber, being kept in a vacuum state, for exposing the pre-baked resist film to the extreme ultraviolet radiation.
2. The apparatus of claim 1 , wherein the second processing chamber comprises means for irradiating the resist film with a type of radiation having too long a wavelength to sensitize the resist film.
3. The apparatus of claim 1 , wherein the second processing chamber comprises means for exhausting a gas, emanated from the resist film, out of the second processing chamber.
4. An apparatus of claim 1 , wherein the first processing chamber is also used for defining a resist pattern on the substrate by developing the resist film that has been exposed to extreme ultraviolet radiation.
5. An apparatus for fabricating a semiconductor device, comprising:
a first processing chamber for forming a resist film on a substrate;
a second processing chamber, being kept in a vacuum state, for pre- and post-baking the resist film before and after the resist film is exposed to the extreme ultraviolet radiation, respectively; and
a third processing chamber, being kept in a vacuum state, for exposing the pre-baked resist film to the extreme ultraviolet radiation.
6. The apparatus of claim 5 , wherein the second processing chamber comprises means for irradiating the resist film with a type of radiation having too long a wavelength to sensitize the resist film.
7. The apparatus of claim 5 , wherein the second processing chamber comprises means for exhausting a gas, emanated from the resist film, out of the second processing chamber.
8. An apparatus of claim 5 , wherein the first processing chamber is also used for defining a resist pattern on the substrate by developing the resist film that has been exposed to extreme ultraviolet radiation.
9. An apparatus for fabricating a semiconductor device, comprising:
a first processing chamber for forming a resist film on a substrate;
a second processing chamber, being kept in a vacuum state, for pre- and post-baking the resist film before and after the resist film is exposed to extreme ultraviolet radiation, respectively;
a third processing chamber, being kept in a vacuum state, for exposing the pre-baked resist film to the extreme ultraviolet radiation;
a fourth processing chamber for forming a silylated layer selectively on the surface of the post-baked resist film; and
a fifth processing chamber for defining a resist pattern on the substrate by dry-developing the resist film, on which the silylated layer has been formed, using the silylated layer as a hard mask.
10. The apparatus of claim 9 , wherein the second processing chamber comprises means for irradiating the resist film with a type of radiation having too long a wavelength to sensitize the resist film.
11. The apparatus of claim 9 , wherein the second processing chamber comprises means for exhausting a gas, emanated from the resist film, out of the second processing chamber.