IP Library › Granted Patent US 6,978,066
Granted Patent B2
US 6,978,066 · App. 10/642,573 · Granted Dec 20, 2005

Method for fabricating fiber bragg grating elements and planar light circuits made thereof

Assignee: Vanguard International Semiconductor Corporation
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Quick Facts
Patent No.
US 6,978,066
App. No.
10/642,573
Granted
Dec 20, 2005
Kind
B2
Abstract

A method for fabricating Fiber Bragg Grating elements and planar light circuits made thereof. A mask having a predetermined pattern and a wafer are provided, wherein a light-guiding channel filled with light-guiding substance is formed on the wafer. A photoresist layer is then formed to cover the wafer. Magnification of a photolithography apparatus is adjusted to a first magnification, followed by transferring the pattern on the mask to the photoresist layer to form a first pattern. Light-guiding substance not covered by the photoresist layer is then removed so that the first pattern is transferred to the light-guiding channel. The light-guiding channel then forms a Fiber Bragg Grating element.

Claims (10)

1. A method for fabricating a Fiber Bragg Grating element, comprising:

(a) providing a mask having a predetermined pattern and a wafer, wherein a light-guiding channel filled with light-guiding substance is formed on the wafer, and a photoresist layer is formed on the wafer;

(b) adjusting a magnification of a photolithography apparatus to a first magnification and transferring the predetermined pattern on the mask to the photoresist layer on the wafer to form a first pattern; and

(c) removing the light-guiding substance not covered by the photoresist layer so that the first pattern is transferred to the light-guiding channel thus forming the Fiber Bragg Grating element, which picks out a light of a specific wavelength.

2. The method as claimed in claim 1 , wherein the mask comprises a glass substrate.

3. The method as claimed in claim 1 , wherein the predetermined pattern is made of Cr.

4. The method as claimed in claim 1 , further comprising:

(d) adjusting the magnification of the photolithography apparatus to a second magnification so that the predetermined pattern is transferred to the photoresist layer to form a second pattern, wherein the second magnification is not equal to the first magnification, and the first pattern and the second pattern are formed on the light-guiding channel without overlapping one another;

wherein the first pattern and the second pattern are simultaneously transferred in step (c) to the light-guiding channel on the wafer.

5. The method as claimed in claim 1 , wherein the first magnification is a positive integer or a non-positive integer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 19, 2003
From: KOH, CHAO-MING; DOONG, JIA-CHING; CHANG, HSIEN-TZU; HUNG, HAO-CHENG
To: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
Reel/Frame 014408/0462 →
Priority Claims (1)
TW 92109982 A · Apr 29, 2003 · national
Continuity (1)
Related Publication 20040218860A1 · Nov 4, 2004