Interconnecting substrates for electrical coupling of microelectronic components
Interconnecting substrates used in the manufacturing of microelectronic devices and printed circuit assemblies, packaged microelectronic devices having interconnecting substrates, and methods of making and using such interconnecting substrates. In one aspect of the invention, an interconnecting substrate comprises a first external layer having a first external surface, a second external layer having a second external surface, and a conductive core between the first and second external layers. The conductive core can have at least a first conductive stratum between the first and second external layers, and a dielectric layer between the first conductive stratum and one of the first or second external layers. The conductive core can also include a second conductive stratum such that the first conductive stratum is on a first surface of the dielectric layer and the second conductive stratum is on a second surface of the dielectric layer. The interconnecting substrate also has at least one vent through at least one of the first conductive stratum, the second conductive stratum, and/or the dielectric layer. The vent is configured to direct moisture away from the dielectric layer, and thus the vent can be a moisture release element that allows moisture to escape from the dielectric layer during high temperature processing.
1. A method of processing a packaged microelectronic device having a microelectronic die, an interconnecting substrate attached to the die, and a protective casing covering at least a portion of the die, the interconnecting substrate comprising a dielectric layer, at least a first conductive stratum on the dielectric layer, and first and second external layers around the dielectric layer and the first conductive stratum, the method comprising:
heating the microelectronic device; and
passing moisture from the dielectric layer through a vent in the first conductive stratum.
2. The method of claim 1 wherein:
the vent comprises a hole in the first conductive stratum; and
passing moisture through the first conductive stratum comprises driving the moisture through the hole.
3. The method of claim 1 wherein:
the vent comprises a channel in the first conductive stratum; and
passing moisture through the first conductive stratum comprises driving the moisture through the channel.
4. The method of claim 1 wherein:
the interconnecting substrate further comprises a second conductive stratum on the dielectric layer such that the first conductive stratum is on a first surface of the dielectric layer and the second conductive stratum is on a second surface of the dielectric layer;
the first conductive stratum has a first vent and the second conductive stratum has a second vent; and
the method comprises passing moisture through the first vent and passing moisture through the second vent.
5. The method of claim 4 wherein:
the first vent is a first hole and the second vent is a second hole superimposed with the first hole; and
passing the moisture through the first and second vents comprises driving the moisture through the first and second holes.
6. The method of claim 4 wherein:
the first vent is a first hole and the second vent is a second hole offset relative to the first hole; and
passing the moisture through the first and second vents comprises driving the moisture through the first and second holes.
7. The method of claim 4 wherein:
the first vent comprises a first channel and the second vent comprises a second channel; and
passing the moisture through the first and second vents comprises driving the moisture through the first and second channels.
8. A method of processing a packaged microelectronic device, the method comprising:
heating the microelectronic device, wherein the microelectronic device includes a microelectronic die, an interconnecting substrate attached to the die, and a protective casing covering at least a portion of the die, and wherein the interconnecting substrate includes a dielectric layer, at least a first conductive stratum on the dielectric layer, and first and second external layers around the dielectric layer and the first conductive layer; and
passing moisture from the dielectric layer through a vent in the first conductive stratum.
9. The method of claim 8 wherein:
the vent comprises a hole in the first conductive stratum; and
passing moisture through the first conductive stratum comprises driving the moisture through the hole.
10. The method of claim 8 wherein:
the vent comprises a channel in the first conductive stratum; and
passing moisture through the first conductive stratum comprises driving the moisture through the channel.
11. The method of claim 8 wherein:
the interconnecting substrate further comprises a second conductive stratum on the dielectric layer such that the first conductive stratum is on a first surface of the dielectric layer and the second conductive stratum is on a second surface of the dielectric layer;
the first conductive stratum has a first vent and the second conductive stratum has a second vent; and
the method comprises passing moisture through the first vent and passing moisture through the second vent.
12. The method of claim 11 wherein:
the first vent is a first hole and the second vent is a second hole superimposed with the first hole; and
passing the moisture through the first and second vents comprises driving the moisture through the first and second holes.
13. The method of claim 11 wherein:
the first vent is a first hole and the second vent is a second hole offset relative to the first hole; and
passing the moisture through the first and second vents comprises driving the moisture through the first and second holes.
14. The method of claim 11 wherein:
the first vent comprises a first channel and the second vent comprises a second channel; and
passing the moisture through the first and second vents comprises driving the moisture through the first and second channels.