IP Library › Granted Patent US 6,984,849
Granted Patent B2
US 6,984,849 · App. 10/814,276 · Granted Jan 10, 2006

Optical cap for semiconductor device

Assignee: Shinko Electric Industries Co., LTD
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Quick Facts
Patent No.
US 6,984,849
App. No.
10/814,276
Granted
Jan 10, 2006
Kind
B2
Abstract

An optical cap for semiconductor device, the cap comprising: a metal cap body having an opening and a transparent optical window sealed with the metal cap body to cover the opening by means of a sealing member. The sealing member includes a bismuth low-melting point glass containing no lead, an intermediate metal layer attached to the metal cap body, the intermediate metal layer being a metal capable of causing a eutectic reaction with respect to Bi contained in the low-melting point glass, and an eutectic alloy layer thus formed between the low-melting point glass and the intermediate metal layer.

Claims (18)

1. An optical cap structure for semiconductor device, said structure comprising:

a cap body having an opening;

an optical window made of glass plate sealed with said cap body to cover said opening so that an optical beam transmits through said optical window; and

a sealing member for sealing said optical window with said metal cap, said sealing member including a bismuth low-melting point glass containing no lead, an intermediate metal layer attached to said metal cap body, said intermediate metal layer being a metal capable of causing a eutectic reaction with respect to Bi contained in said low-melting point glass, and an eutectic alloy layer thus formed between said low-melting point glass and said intermediate metal layer.

2. An optical cap structure as set forth in claim 1 , wherein said intermediate metal is a plated gold, so that said optical window is sealed with the cap body by means of the eutectic alloy of Bi contained in said low-melting point glass and Au of the intermediate metal.

3. An optical cap structure as set forth in claim 1 , wherein said intermediate metal is a plated palladium, so that said optical window is sealed with the cap body by means of the eutectic alloy of Bi contained in said low-melting point glass and Pd of the intermediate metal.

4. An optical cap structure as set forth in claim 1 , wherein said intermediate metal is a Sn—Ni alloy plated layer, so that said optical window is sealed with the cap body by means of the eutectic alloy of Bi contained in said low-melting point glass and Sn—Ni alloy of the intermediate metal.

5. An optical cap structure as set forth in claim 1 , wherein said intermediate metal is a Zn—Ni alloy plated layer, so that said optical window is sealed with the cap body by means of the eutectic alloy of Bi contained in said low-melting point glass and Zn—Ni alloy of the intermediate metal.

6. An optical cap structure as set forth in claim 1 , wherein said intermediate metal is a Sn—Zn alloy plated layer, so that said optical window is sealed with the cap body by means of the eutectic alloy of Bi contained in said low-melting point glass and Sn—Zn alloy of the intermediate metal.

7. An optical cap structure as set forth in claim 1 , wherein said low-melting point glass contains not less than 30 weight % of Bi.

8. An optical cap structure as set forth in claim 1 , wherein a first surface of the intermediate metal opposite to a second surface attached to the metal cap body is a rough surface, a crystal particle size of said first surface being 0.5 μm to 1.0 μm.

9. An optical cap structure as set forth in claim 8 , wherein the intermediate metal attached to the metal cap body comprises multiple plated metal layers, at least one of the metal layers having a rough surface, a crystal particle size of which being 0.5 μm to 1.0 μm.

10. An optical device comprising:

a stem;

an optical element mounted on said stem;

a cap body secured on said stem to accommodate therein said optical element, said cap body having an opening;

an optical window made of glass plate sealed with said cap body to cover said opening so that an optical beam transmits through said optical window; and

a sealing member for sealing said optical window with said metal cap, said sealing member including a bismuth low-melting point glass containing no lead, an intermediate metal layer attached to said metal cap body, said intermediate metal layer being a metal capable of eutectic reaction with respect to Bi contained in said low-melting point glass, and a eutectic alloy layer thus formed of said low-melting point glass and said intermediate metal layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 1, 2004
From: NISHIZAWA, HIRONORI; HATAKEYAMA, YASUSHI; YODA, TOSHIHISA; KAWAMURA, KENJI
To: SHINKO ELECTRIC INDUSTRIES CO., LTD.
Reel/Frame 015180/0572 →
Priority Claims (3)
JP 2003-101222 · Apr 4, 2003 · national
JP 2003-312128 · Sep 4, 2003 · national
JP 2003-379849 · Nov 10, 2003 · national
Continuity (1)
Related Publication 20040195580A1 · Oct 7, 2004