Methods of forming MIM type capacitor structures using low temperature plasma processing
Methods of forming metal-insulator-metal type capacitors in integrated circuit memory devices can include crystallizing an HfO 2 dielectric layer on a lower electrode of a capacitor structure in a low temperature plasma treatment at a temperature in range between about 250 degrees Centigrade and about 450 degrees Centigrade. An upper electrode can be formed on the HfO 2 dielectric layer.
1. A method of forming a metal-insulator-metal type capacitor structure in an integrated circuit memory device, comprising:
crystallizing an HfO 2 dielectric layer on a lower electrode of a capacitor structure in a low temperature plasma treatment at a temperature in a range between about 250 degrees Centigrade and about 450 degrees Centigrade; and
forming an upper electrode on the HfO 2 dielectric layer, wherein forming an upper electrode comprises forming the upper electrode using a metal source containing halogen or an organometallic compound, or a combination thereof.
2. A method according to claim 1 wherein crystallizing an HfO 2 dielectric layer further comprises:
crystallizing the HfO 2 dielectric layer in a range between about 350 degrees Centigrade and about 450 degrees Centigrade.
3. A method according to claim 1 wherein forming the upper electrode using a metal source further comprises forming the upper electrode using a metal source containing Cl.
4. A method according to claim 1 wherein crystallizing an HfO 2 dielectric layer further comprises:
crystallizing the HfO 2 dielectric layer in the low temperature plasma atmosphere including an N gas.
5. A method according to claim 4 wherein crystallizing an HfO 2 dielectric layer further comprises:
crystallizing the HfO 2 dielectric layer in the low temperature plasma atmosphere including NH 3 gas or N 2 O gas or N 2 gas or combinations thereof.
6. A method of forming a metal-insulator-metal type capacitor structure in an integrated circuit memory device, comprising:
forming a lower electrode on a substrate;
forming an HfO 2 dielectric layer on the lower electrode;
processing the HfO 2 dielectric layer in a plasma atmosphere at a temperature in a range between about 250 degrees Centigrade and about 450 degrees Centigrade; and
forming an upper electrode on the HfO 2 dielectric layer, wherein the upper electrode is formed using a halogen-containing metal source or an organometallic compound source or a combination thereof.
7. A method according to claim 6 wherein the lower electrode is formed of a metal nitride or a noble metal or combinations thereof.
8. A method according to claim 7 wherein the lower electrode is formed of TiN or TaN or WN or Ru or Ir or Pt or combinations thereof.
9. A method according to claim 6 wherein the HfO 2 dielectric layer is formed using atomic layer deposition or chemical vapor deposition or physical vapor deposition or metal-organic chemical vapor deposition.
10. A method according to claim 6 wherein processing the HfO 2 dielectric layer in a plasma atmosphere is performed using plasma of N-containing gas.
11. A method according to claim 10 wherein the N-containing gas includes NH 3 or N 2 O or N 2 or combinations thereof.
12. A method according to claim 6 wherein the upper electrode is formed of a metal nitride or a noble metal or combinations thereof.
13. A method according to claim 12 wherein the upper electrode is formed of TiN or TaN or WN or Ru or Ir or Pt, or combinations thereof.
14. A method according to claim 6 wherein the plasma atmosphere is maintained at a temperature in a range between about 250 degrees Centigrade and about 450 degrees Centigrade.
15. A method of forming a metal-insulator-metal type capacitor in an integrated circuit memory device, comprising:
forming a buried contact plug in a first interlayer dielectric layer on a substrate;
forming a first silicon nitride layer and a second interlayer dielectric layer on the buried contact plug;
forming a buffer buried contact plug in the first silicon nitride layer and in the second interlayer dielectric layer to contact the buried contact plug;
sequentially forming a high density plasma layer, a second silicon nitride layer, a protection layer, and an insulating layer on the buffer buried contact plug to form a cover layer;
removing a portion of the cover layer to form a hole to expose at least a portion of the buffer buried contact plug;
forming a conductive layer in the hole and outside the hole on the insulating layer using a Cl source metal;
forming a sacrificial layer on the conductive layer inside and outside the hole;
removing a portion of the sacrificial layer outside the hole to expose the insulating layer;
removing the insulating layer from around the conductive layer to form a lower electrode for the capacitor;
forming an amorphous HfO 2 dielectric layer on the lower electrode;
crystallizing the amorphous HfO 2 dielectric layer on the lower electrode in a low temperature plasma atmosphere including NH 3 gas or N 2 O gas or N 2 gas or combinations thereof in a temperature range between about 350 degrees Centigrade and about 450 degrees Centigrade to provide a crystallized HfO 2 dielectric layer; and
forming an upper electrode on the crystallized HfO 2 dielectric layer using a halogen-containing metal source or an organometallic compound source or a combination thereof.