IP Library › Granted Patent US 7,001,669
Granted Patent B2
US 7,001,669 · App. 10/328,631 · Granted Feb 21, 2006

Process for the preparation of metal-containing nanostructured films

Assignee: The Administration of the Tulane Educational Fund
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Quick Facts
Patent No.
US 7,001,669
App. No.
10/328,631
Granted
Feb 21, 2006
Kind
B2
Abstract

Metal-containing nanostructured films are prepared by electrodepositing a metal-containing composition within the pores of a mesoporous silica template to form a metal-containing silica nanocomposite. The nanocomposite is annealed to strengthen the deposited metal-containing composition. The silica is then removed from the nanocomposite, e.g., by dissolving the silica in an etching solution to provide a self-supporting metal-containing nanostructured film. The nanostructured films have a nanowire or nanomesh architecture depending on the pore structure of the mesoporous silica template used to prepare the films.

Claims (3)

1. An annealed, self-supporting palladium nanowire film having a film thickness in the range of about 50 to about 1000 nm; wherein the film comprises an array of palladium nanowires, each wire having a diameter in the range of about 2 to about 20 nm.

2. An annealed, self supporting palladium nanomesh film having a film thickness in the range of about 50 to about 1000 nm; the film comprising a palladium nanomesh having a plurality of pores; and wherein the palladium nanomesh comprises a substantially interconnecting palladium nanosegment network having a plurality of interconnected nanowire segments, each nanowire segment having a transverse dimension in the range of about 2 to about 20 nm.

3. An annealed, self-supporting cadmium selenide nanomesh film having a film thickness in the range of about 50 to about 1000; the film comprising a cadmium selenide nanomesh having a plurality of pores; and wherein the cadmium selenide nanomesh comprises a substantially interconnecting cadmium selenide nanosegment network having a plurality of interconnected nanowire segments, each nanowire segment having a transverse dimension in the range of about 2 to about 20 nm.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 12, 2003
From: LU, YUNFENG; WANG, DONGHAI
To: ADMINISTRATORS OF THE TULANE EDUCATIONAL FUND, THE
Reel/Frame 013831/0255 →
Continuity (1)
Related Publication 20040118698A1 · Jun 24, 2004