Voltage regulator circuit
A voltage regulator circuit and a semiconductor memory device using the same are provided. The voltage regulator circuit regulates an input voltage to provide an output voltage. The voltage regulator circuit comprises a voltage divider to divide the output voltage, a comparator to determine whether the divided voltage is less than a reference voltage, a driver connected between the input voltage and the output voltage, and operating operate responsive to the comparator, and a controller to control the voltage divider to gradually vary the output voltage. The voltage divider includes a resistance that operates responsive to the controller and whose value varies in a binary weighted form.
1. A voltage regulator circuit to regulate an input voltage and generate an output voltage, the voltage regulator circuit comprising:
a voltage divider to generate a divided voltage;
a comparator to compare the divided voltage to a reference voltage;
a driver connected between an input voltage and an output voltage, the driver operating responsive to the comparator; and
a controller to control the voltage divider with a control signal to gradually vary the output voltage;
where the voltage divider includes
a first resistance adapted to vary in a binary weighted form responsive to the controller; and
a second resistance having a second fixed resistance serially connected to the first resistance.
2. The voltage regulator circuit of claim 1 where the controller comprises a counter to generate a control code responsive to a clock signal.
3. The voltage regulator circuit of claim 2 where the voltage divider comprises:
a plurality of weighted resistors; and
a plurality switches each connected in parallel to a corresponding weighted resistor and operating responsive to the control code.
4. The voltage regulator circuit of claim 3
where the weighted resistor corresponding to a least significant bit of the control code has a smallest resistance value; and
where the weighted resistor corresponding to the most significant bit of the control code has a largest resistance value.
5. The voltage regulator circuit of claim 3 where each of the switches comprises:
first and second level shifters to receive corresponding control code bit signals;
an inverter to receive an output signal from the first level shifter; and
a transmission gate connected in parallel with a corresponding weighted resistor and operating responsive to the inverter and the second level shifter.
6. The voltage regulator circuit of claim 5
where the first level shifter operates at a voltage larger than a power supply voltage; and
where the second level shifter operates at the output voltage.
7. The voltage regulator circuit of claim 3
where switches receiving least significant bits of the control code, comprise:
first and second level shifters to receive corresponding control codes;
an inverter to receive an output signal from the first level shifter; and
a transmission gate connected in parallel with a corresponding weighted resistor and operating responsive to inverter and the second level shifter; and
where switches receiving most significant bits of the control code, comprise:
a third level shifter to receive a corresponding control code; and
an NMOS transistor parallel connected with a corresponding weighted resistor, and operating responsive to the third level shifter.
8. The voltage regulator circuit of claim 7
where the first and third level shifters operate at a voltage larger than a power supply voltage;
where the second level shifter operates at the output voltage.
9. A voltage regulator circuit comprising:
an input terminal to receive a high voltage;
an output terminal to provide an output voltage therefrom;
a plurality of resistors connected serially between the output terminal and a ground voltage;
a plurality of switches each connected in parallel to a corresponding one of the resistors;
a controller to generate control signals that operate the switches;
a comparator to compare a divided voltage output from the plurality of resistors to a reference voltage; and
a driver connected between the input terminal and the output terminal and operating responsive to the comparator;
where the plurality of resistors comprises at least one weighted resistor, and a resistor having a fixed resistance serially connected to the weighted resistor.
10. The voltage regulator circuit of claim 9
where the weighted resistor corresponding to a control signal of a least significant bit has the smallest resistance value; and
where the weighted resistor corresponding to a control signal of most significant bit has the largest resistance value.
11. The voltage regulator circuit of claim 9 where the controller comprises an up counter.
12. The voltage regulator circuit of claim 9 where the controller comprises a down counter.
13. The voltage regulator circuit of claim 9 where each switch comprises:
first and second level shifters to receive corresponding control signals;
an inverter to invert an output signal of the first level shifter; and
a transmission gate connected in parallel with a corresponding weighted resistor and operating responsive to the inverter and the second level shifter.
14. The voltage regulator circuit of claim 9
where each switch that receives most significant bits of the control code, comprises:
first and second level shifters to receive corresponding control signals;
an inverter to receive an output signal of the first level shifter; and
a transmission gate connected in parallel with a corresponding weighted resistor, and operating responsive to the inverter and the second level shifter; and
where each switch that receives least significant bits of control code, comprises:
a third level shifter to receive a corresponding control signal; and
an NMOS transistor connected in parallel with a corresponding weighted resistor, and operating responsive to the third level shifter.
15. A semiconductor memory device, comprising:
an array of memory cells arranged in a matrix of rows and columns;
a decoder to decode one of the columns to supply the selected column with a word line voltage; and
a word line voltage generating circuit to generate the word line voltage, where the word
line voltage generating circuit comprises:
a high voltage generator to generate a high voltage;
a voltage divider to divide the high voltage;
a comparator to compare divided voltage is to a reference voltage;
a driver connected between the high voltage and the word line voltage and operating responsive to the comparator; and
a controller to control the voltage divider to gradually vary the output voltage; and
where the voltage divider includes
a resistance unit having a first resistance value that varies in a binary weighted form responsive to the controller and a second resistance that is fixed serially connected to the first resistance value.
16. The semiconductor memory device of claim 15 where the resistance unit comprises:
a plurality of weighted resistors; and
a plurality of switches connected in parallel to the plurality of weighted resistors.
17. The semiconductor memory device of claim 15
where a weighted resistor corresponding to a least significant bit of a control code has the smallest resistance value; and
where the weighted resistor corresponding to a most significant bit of the control code has a largest resistance value.
18. The semiconductor memory device of claim 15
where the controller comprises a counter to generate the control code in synchronism with a clock signal.
19. The semiconductor memory device of claim 15
where the counter comprises any one of an up counter and a down counter.
20. The semiconductor memory device of claim 16 ,
where each switch comprises:
first and second level shifters to receive corresponding control code;
an inverter to receive an output signal of the first level shifter; and
a transmission gate connected in parallel with a corresponding weighted resistor, and operating responsive to the inverter and the second level shifter.
21. The semiconductor memory device of claim 16
where each switch that receives most significant control code bit signals comprises:
first and second level shifters to receive a corresponding control code bit signal;
an inverter to invert the output signal of the first level shifter; and
a transmission gate connected in parallel with a corresponding weighted resistor, and operating responsive to the inverter and the second level shifter;
where each switch that receives less significant control code bit signals of the control code, comprises:
a third level shifter to receive a corresponding control code bit signal; and
an NMOS transistor connected in parallel with a corresponding weighted resistor, and operating responsive to the third level shifter.
22. The semiconductor memory device of claim 15
where the controller comprises:
a first signal generator to generate a code of a gradually varying value;
a second signal generator to generate a code of a fixed value; and
a selector to select one of the first and second signal generators according to an operation mode of the memory device as the control code.
23. The voltage regulator circuit of claim 1 where the controller comprises a plurality of flip flops.
24. The voltage regulator circuit of claim 9 where the controller comprises a plurality of flip flops, each flip flop being associated with one of the plurality of switches.
25. The semiconductor memory device of claim 15 where the controller includes a plurality of flip flops.