IP Library Granted Patent US 7,008,734
Granted Patent B2
US 7,008,734 · App. 10/608,412 · Granted Mar 7, 2006

Phase shift mask

Assignee: Hynix Semiconductor Inc.
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Quick Facts
Patent No.
US 7,008,734
App. No.
10/608,412
Granted
Mar 7, 2006
Kind
B2
Abstract

A phase shift mask, comprising a transparent substrate having a trench-type guard ring pattern for shifting the phase of light transmitted therethrough by 180°; and a half-tone phase shift pattern disposed on the transparent substrate and surrounded by the guard ring pattern is disclosed.

Claims (3)

1. A phase shift mask, comprising: a transparent substrate having a trench in a guard ring pattern for shifting the phase of light transmitted therethrough by 180°; and a half-tone phase shift pattern disposed on the transparent substrate and surrounded by the guard ring pattern.

2. The phase shift mask according to claim 1 , wherein the transparencies of the transparent substrate and the guard ring pattern are 100%, respectively.

3. The phase shift mask according to claim 1 , wherein the transparency of the half-tone phase shift pattern ranges from 0 to 25%, and the half-tone phase shift pattern shifts the phase of light transmitted therethrough by 0° or 180°.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 9, 2014
From: SK HYNIX INC
To: INTELLECTUAL DISCOVERY CO., LTD.
Reel/Frame 032421/0488 →
CHANGE OF NAME Recorded Mar 9, 2014
From: HYNIX SEMICONDUCTOR, INC.
To: SK HYNIX INC
Reel/Frame 032421/0496 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 24, 2003
From: LIM, CHANG MOON; KIM, SEO MIN
To: HYNIX SEMICONDUCTOR INC.
Reel/Frame 014740/0580 →
Priority Claims (1)
KR 10-2002-0042031 · Jul 18, 2002 · national
Continuity (1)
Related Publication 20040110071A1 · Jun 10, 2004