IP Library › Granted Patent US 7,012,492

Granted Patent B2

US 7,012,492 · App. 10/853,501 · Granted Mar 14, 2006

Contact construction for DC loads and switching device having the contact construction

Assignee: OMRON Corporation

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Quick Facts

Patent No.: US 7,012,492
App. No.: 10/853,501
Granted: Mar 14, 2006
Kind: B2

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Abstract

A contact construction and switching device for DC loads that can be repeatedly used while minimizing problems such as cut-off failure, locking and deposition due to an abnormal continuation of an arc between the contacts, burning and destruction of the contacts, and an increase in contact resistance has a construction that includes a stationary contact and a movable contact that are opposite to each other, and a magnetic unit which applies a magnetic field orthogonal to the moving direction of the movable contact. In the contact construction, the anode-side contact is made of an AgSnO 2 -based alloy which contains at least Ag and SnO 2 , and the cathode-side contact is made of one of an AgNi-based alloy which contains at least Ag and Ni and an AgCuO-based alloy which contains Ag and CuO. The switching device has the above-mentioned contact construction.

Claims (123)

1. A contact construction for DC loads comprising:

a stationary contact and a movable contact that are opposite to each other;

and a magnetic unit which applies a magnetic field acting in a direction orthogonal to a moving direction of the movable contact, to a space in which both contacts exist,

one of the stationary contact and the movable contact being used as an anode-side contact, and the other being used as a cathode-side contact,

wherein the anode-side contact is made of an AgSnO 2 -based alloy which contains at least Ag and SnO 2 , and the cathode-side contact is made of one of an AgNi-based alloy which contains at least Ag and Ni and an AgCuO-based alloy which contains Ag and CuO, and

wherein the AgNi-based alloy contains 8–12 wt. % Ni.

2. A contact construction for DC loads according to claim 1 , wherein the stationary contact is used as the anode-side contact and the movable contact is used as the cathode-side contact.

3. A contact construction for DC loads according to claim 1 , wherein the AgSnO 2 -based alloy used as the anode-side contact is an AgSnO 2 In 2 O3-based alloy and the AgNi-based alloy used as the cathode-side contact is an AgNiC-based alloy.

4. A contact construction for DC loads according to claim 1 , wherein the anode-side contact is made of an AgSnO 2 In 2 O 3 -based alloy which contains a total of 8–15 wt. % of metal oxides, 6–10 wt. % SnO 2 , and 2–8 wt. % In 2 O 3 , and the cathode-side contact is made of one of an AgNiC-based alloy which contains 8–12 wt. % Ni and not greater than 2 wt. % C and an AgCuO-based alloy which contains 10–14 wt. % CuO.

5. A contact construction for DC loads according to claim 1 , wherein a permanent magnet is used as the magnetic unit for applying the magnetic field.

6. A switching device comprising the contact construction for DC loads comprising:

a stationary contact and a movable contact that are opposite to each other;

and a magnetic unit which applies a magnetic field acting in a direction orthogonal to a moving direction of the movable contact, to a space in which both contacts exist,

one of the stationary contact and the movable contact being used as an anode-side contact, and the other being used as a cathode-side contact,

wherein the AgNi-based alloy contains 8–12 wt. % Ni.

7. A contact construction for DC loads according to claim 2 , wherein the AgSnO 2 -based alloy used as the anode-side contact is an AgSnO 2 In 2 O 3 -based alloy and the AgNi-based alloy used as the cathode-side contact is an AgNiC-based alloy.

8. A contact construction for DC loads according to claim 2 , wherein the anode-side contact is made of an AgSnO 2 In 2 O 3 -based alloy which contains a total of 8–15 wt. % of metal oxides, 6–10 wt. % SnO 2 , and 2–8 wt. % In 2 O 3 , and the cathode-side contact is made of one of an AgNiC-based alloy which contains 8–12 wt. % Ni and not greater than 2 wt. % C and an AgCuO-based alloy which contains 10–14 wt. % CuO.

9. A contact construction for DC loads according to claim 3 , wherein the anode-side contact is made of an AgSnO 2 In 2 O 3 -based alloy which contains a total of 8–15 wt. % of metal oxides, 6–10 wt. % SnO 2 , and 2–8 wt. % In 2 O 3 , and the cathode-side contact is made of one of an AgNiC-based alloy which contains 8–12 wt. % Ni and not greater than 2 wt. % C and an AgCuO-based alloy which contains 10–14 wt. % CuO.

10. A contact construction for DC loads according to claim 2 , wherein a permanent magnet is used as the magnetic unit for applying the magnetic field.

11. A contact construction for DC loads according to claim 3 , wherein a permanent magnet is used as the magnetic unit for applying the magnetic field.

12. A contact construction for DC loads according to claim 4 , wherein a permanent magnet is used as the magnetic unit for applying the magnetic field.

13. A switching device comprising the contact construction for DC loads comprising:

a stationary contact and a movable contact that are opposite to each other; and

a magnetic unit which applies a magnetic field acting in a direction orthogonal to a moving direction of the movable contact, to a space in which both contacts exist,

one of the stationary contact and the movable contact being used as an anode-side contact, and the other being used as a cathode-side contact,

wherein the AgNi-based alloy contains 8–12 wt. % Ni, and

wherein the stationary contact is used as the anode-side contact and the movable contact is used as the cathode-side contact.

14. A switching device comprising the contact construction for DC loads comprising:

a stationary contact and a movable contact that are opposite to each other; and

a magnetic unit which applies a magnetic field acting in a direction orthogonal to a moving direction of the movable contact, to a space in which both contacts exist, one of the stationary contact and the movable contact being used as an anode-side contact, and the other being used as a cathode-side contact,

wherein the AgSnO 2 -based alloy used as the anode-side contact is an AgSnO 2 In 2 O 3 -based alloy and the AgNi-based alloy used as the cathode-side contact is an AgNiC-based alloy.

15. A switching device comprising the contact construction for DC loads comprising:

a stationary contact and a movable contact that are opposite to each other; and

a magnetic unit which applies a magnetic field acting in a direction orthogonal to a moving direction of the movable contact, to a space in which both contacts exist,

one of the stationary contact and the movable contact being used as an anode-side contact, and the other being used as a cathode-side contact,

wherein the stationary contact is used as the anode-side contact and the movable contact is used as the cathode-side contact, and wherein the AgSnO 2 -based alloy used as the anode-side contact is an AgSnO 2 In 2 O 3 -based alloy and the AgNi-based alloy used as the cathode-side contact is an AgNiC-based alloy.

16. A switching device comprising the contact construction for DC loads comprising:

a stationary contact and a movable contact that are opposite to each other; and

wherein the anode-side contact is made of an AgSnO 2 In 2 O 3 -based alloy which contains a total of 8–15 wt. % of metal oxides, 6–10 wt. % SnO 2 , and 2–8 wt. % In 2 O 3 , and the cathode-side contact is made of one of an AgNiC-based alloy which contains 8–12 wt. % Ni and not greater than 2 wt. % C and an AgCuO-based alloy which contains 10–14 wt. % CuO.

17. A switching device comprising the contact construction for DC loads comprising:

a stationary contact and a movable contact that are opposite to each other; and

a magnetic unit which applies a magnetic field acting in a direction orthogonal to a moving direction of the movable contact, to a space in which both contacts exist,

one of the stationary contact and the movable contact being used as an anode-side contact, and the other being used as a cathode-side contact,

wherein the stationary contact is used as the anode-side contact and the movable contact is used as the cathode-side contact and wherein the anode-side contact is made of an AgSnO 2 In 2 O 3 -based alloy which contains a total of 8–15 wt. % of metal oxides, 6–10 wt. % SnO 2 , and 2–8 wt. % In 2 O 3 , and the cathode-side contact is made of one of an AgNiC-based alloy which contains 8–12 wt. % Ni and not greater than 2 wt. % C and an AgCuO-based alloy which contains 10–14 wt. % CuO.

18. A switching device comprising the contact construction for DC loads comprising:

a stationary contact and a movable contact that are opposite to each other; and

a magnetic unit which applies a magnetic field acting in a direction orthogonal to a moving direction of the movable contact, to a space in which both contacts exist,

one of the stationary contact and the movable contact being used as an anode-side contact, and the other being used as a cathode-side contact,

wherein the AgSnO 2 -based alloy used as the anode-side contact is an .AgSnO 2 In 2 O 3 -based alloy and the AgNi-based alloy used as the cathode-side contact is an AgNiC-based alloy, and

19. A switching device comprising the contact construction for DC loads comprising:

a stationary contact and a movable contact that are opposite to each other; and

wherein the stationary contact is used as the anode-side contact and the movable contact is used as the cathode-side contact,

wherein the AgSnO 2 -based alloy used as the anode-side contact is an AgSnO 2 In 2 O 3 -based alloy and the AgNi-based alloy used as the cathode-side contact is an AgNiC-based alloy, and

20. A switching device comprising the contact construction for DC loads comprising:

a stationary contact and a movable contact that are opposite to each other; and

a magnetic unit which applies a magnetic field acting in a direction orthogonal to a moving direction of the movable contact, to a space in which both contacts exist,

one of the stationary contact and the movable contact being used as an anode-side contact, and the other being used as a cathode-side contact,

wherein the AgNi-based alloy contains 8–12 wt. % Ni, and

wherein a permanent magnet is used as the magnetic unit for applying the magnetic field.

21. A switching device comprising the contact construction for DC loads comprising:

a stationary contact and a movable contact that are opposite to each other; and

wherein the stationary contact is used as the anode-side contact and the movable contact is used as the cathode-side contact,

wherein the AgNi-based alloy contains 8–12 wt. % Ni, and

wherein a permanent magnet is used as the magnetic unit for applying the magnetic field.

22. A switching device comprising the contact construction for DC loads comprising:

a stationary contact and a movable contact that are opposite to each other; and

wherein the AgSnO 2 -based alloy used as the anode-side contact is an AgSnO 2 In 2 O 3 -based alloy and the AgNi-based alloy used as the cathode-side contact is an AgNiC-based alloy, and

wherein a permanent magnet is used as the magnetic unit for applying the magnetic field.

23. A switching device comprising the contact construction for DC loads comprising:

a stationary contact and a movable contact that are opposite to each other; and

wherein the stationary contact is used as the anode-side contact and the movable contact is used as the cathode-side contact,

wherein the AgSnO 2 -based alloy used as the anode-side contact is an AgSnO 2 In 2 O 3 -based alloy and the AgNi-based alloy used as the cathode-side contact is an AgNiC-based alloy, and

wherein a permanent magnet is used as the magnetic unit for applying the magnetic field.

24. A switching device comprising the contact construction for DC loads comprising:

a stationary contact and a movable contact that are opposite to each other; and

wherein the anode-side contact is made of an AgSnO 2 In2O 3 -based alloy which contains a total of 8–15 wt. % of metal oxides, 6–10 wt. % SnO 2 , and 2–8 wt. % In 2 O 3 , and the cathode-side contact is made of one of an AgNiC-based alloy which contains 8–12 wt. % Ni and not greater than 2 wt. % C and an AgCuO-based alloy which contains 10–14 wt. % CuO, and

wherein a permanent magnet is used as the magnetic unit for applying the magnetic field.

25. A switching device comprising the contact construction for DC loads comprising:

a stationary contact and a movable contact that are opposite to each other; and

a magnetic unit which applies a magnetic field acting in a direction orthogonal to a moving direction of the movable contact, to a space in which both contacts exist,

one of the stationary contact and the movable contact being used as an anode-side contact, and the other being used as a cathode-side contact,

wherein the stationary contact is used as the anode-side contact and the movable contact is used as the cathode-side contact,

wherein a permanent magnet is used as the magnetic unit for applying the magnetic field.

26. A switching device comprising the contact construction for DC loads comprising:

a stationary contact and a movable contact that are opposite to each other; and

a magnetic unit which applies a magnetic field acting in a direction orthogonal to a moving direction of the movable contact, to a space in which both contacts exist,

one of the stationary contact and the movable contact being used as an anode-side contact, and the other being used as a cathode-side contact,

wherein the AgSnO 2 -based alloy used as the anode-side contact is an AgSnO 2 In 2 O 3 -based alloy and the AgNi-based alloy used as the cathode-side contact is an AgNiC-based alloy,

wherein the anode-side contact is made of an AgSnO 2 In2O 3 -based alloy which contains a total of 8–15 wt. % of metal oxides, 6–10 wt. % SnO 2 , and 2–8 wt. % In 2 O 3 , and the cathode-side contact is made of one of an AgNiC-based alloy which contains 8–12 wt. % Ni and not greater than 2 wt. % C and an AgCuO-based alloy which contains 10–14 wt. % CuO, and

wherein a permanent magnet is used as the magnetic unit for applying the magnetic field.

27. A switching device comprising the contact construction for DC loads comprising:

a stationary contact and a movable contact that are opposite to each other; and

a magnetic unit which applies a magnetic field acting in a direction orthogonal to a moving direction of the movable contact, to a space in which both contacts exist,

one of the stationary contact and the movable contact being used as an anode-side contact, and the other being used as a cathode-side contact,

wherein the stationary contact is used as the anode-side contact and the movable contact is used as the cathode-side contact,

wherein the AgSnO 2 -based alloy used as the anode-side contact is an AgSnO 2 In 2 O 3 -based alloy and the AgNi-based alloy used as the cathode-side contact is an AgNiC-based alloy,

wherein a permanent magnet is used as the magnetic unit for applying the magnetic field.

Assignments (1)

ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 25, 2004

From: MORI, TETSUYA; YAMAZAKI, TAKUYA; TSUTSUI, KAZUHIRO; SATO, SUSUMU

To: OMRON CORPORATION

Reel/Frame 015385/0129 →

Priority Claims (1)

JP 2003-147803 · May 26, 2003 · national

Continuity (1)

Related Publication 20040239457A1 · Dec 2, 2004