Sensors including metal oxides selective for specific gases and methods for preparing same
View Patent ↗Sensors are provided which are selective for a specific gas. The sensors include a substrate, electrodes, and a thin film metal oxide. Methods for choosing the metal oxide to be utilized in the sensor with selectivity for the specific gas are also provided, as are methods for determining the presence of a specific gas in a gaseous mixture.
1. A sensor for detecting gases comprising a substrate, plural electrodes, and an undoped thin film metal oxide having a thickness of from about 5 nm to about 500 nm in contact with each electrode, wherein the thin film metal oxide is of sufficiently high purity to exhibit a selective response in the form of an increase or a decrease in an electrical property of the thin film metal oxide in the presence of a specific oxidizing gas selected from the group consisting of O 2 , NO and NO 2 , wherein the metal oxide consists essentially of cubic ReO 3 structured metal oxide selected from the group consisting of WO 3 , β-MoO 3 and UO 2 and is selectively responsive to the oxidizing gases.
2. The sensor of claim 1 , wherein the plural electrodes consist of at least two electrodes in communication with the thin film metal oxide and wherein said thin film metal oxide and electrodes are arranged so as to be capable of being contacted with a specific gas.
3. The sensor of claim 1 , wherein the sensor incorporates a temperature sensing means.
4. The sensor of claim 1 , wherein the substrate is selected from the group consisting of Si/SiO 2 , SiC, GaN, and Al 2 O 3 .
5. The sensor of claim 1 , wherein the electrodes are selected from the group consisting of gold, silver, tungsten, chromium, and titanium.
6. A method for determining the presence of a specific gas in a gaseous mixture which comprises providing a gas sensor with plural electrodes, each electrode in contact with a thin film metal oxide having a thickness of from about 5 nm to about 500 nm which exhibits an increase or a decrease in an electrical property of the thin film metal oxide in the presence of the specific gas, contacting the sensor with the gaseous mixture, detecting the increase or decrease in the electrical property by the electrodes, measuring the change in electrical property, and determining the specific gas concentration, wherein the specific gas is an oxidizing gas selected from the group consisting of O 2 , NO and NO 2 , wherein the metal oxide consists essentially of cubic ReO 3 structured metal oxide selected from the group consisting of WO 3 , β-MoO 3 and UO 2 and is selectively responsive to the oxidizing gases.
7. The method of claim 6 , the plural electrodes further comprising at least two electrodes in communication with the thin film metal oxide, and contacting the thin film metal oxide and the electrodes with the same gaseous mixture.
8. The method of claim 6 , further comprising providing the thin film metal oxide with a porosity and increasing surface area for contact with the gaseous mixture.
9. The method of claim 6 , wherein the measuring further comprises measuring the resistance of the sensor.
10. The method of claim 6 , wherein the measuring further comprises measuring the capacitance of the sensor.
11. The method of claim 6 , wherein the measuring further comprises measuring the impedance of the sensor.
12. The method of claim 6 , wherein the sensor further comprises a substrate.
13. The method of claim 12 , wherein the substrate is selected from the group consisting of Si/SiO 2 , SiC, GaN, and Al 2 O 3 .
14. The method of claim 6 , wherein the electrodes are selected from the group consisting of gold, silver, tungsten, chromium, and titanium.