Methods of fabricating lateral double-diffused metal oxide semiconductor devices
Methods for fabricating LDMOS transistors are disclosed. A disclosed method includes: forming a device isolation structure in a semiconductor substrate through an STI process; forming a photoresist pattern exposing the device isolation structure; forming double diffused wells by implanting ions into the substrate; removing the exposed device isolation structure; and removing the photoresist pattern.
1. A method of fabricating an LDMOS transistor comprising:
forming a device isolation structure in a semiconductor substrate through an STI process;
forming a photoresist pattern exposing the device isolation structure;
implanting ions into the substrate to form double diffused wells, wherein the exposed device isolation structure and the photoresist pattern are used as masks for implanting the ions;
removing the exposed device isolation structure; and
removing the photoresist pattern.
2. A method as defined by claim 1 , further comprising depositing and patterning both a gate oxide layer and a polysilicon layer to form a gate electrode after the device isolation structure is removed.
3. A method as defined by claim 1 , further comprising performing an RTP to form the double diffused wells.
4. A method as defined by claim 1 , wherein removing the exposed device isolation structure comprises wet etching the exposed device isolation structure.