Radiation ray detector and method of manufacturing the detector
The light receiving sections of solid-state image sensing devices ( 2 a and 2 b ) are disposed on a base ( 1 ) to adjoin each other, and are fixed with an adhesive resin ( 11 ). A transparent film ( 3 ) is formed on the light receiving sections so as to wholly cover a gap ( 25 ) and have a flat surface on which a layer of a scintillator ( 4 ) is formed.
1. A radiation detector comprising:
a plurality of image sensor panel each of which has a substrate and a light receiving section formed by two-dimensionally arranging a plurality of photoelectric detectors on said substrate in the vicinity of at least one side of said substrate,
a base on which said light receiving sections of said image sensor panels are arranged to be adjacent to each other,
a surface-flat, transparent film integrally covering the whole of said light receiving sections of said image sensor panels, and
a scintillator formed directly on said transparent film,
wherein a gap generated between said plurality of image sensor panels is 50 μm or less, and said transparent film is 2 μm to 30 μm in thickness.
2. A radiation detector comprising:
a plurality of image sensor panel each of which has a substrate and a light receiving section formed by two-dimensionally arranging a plurality of photoelectric detectors on said substrate in the vicinity of at least one side of said substrate,
a base on which said light receiving sections of said image sensor panels are arranged to be adjacent to each other,
a surface-flat, transparent film integrally covering the whole of said light receiving sections of said image sensor panels, and
a scintillator formed directly on said transparent film,
wherein a gap generated between said plurality of image sensor panels is 50 μm to 70 μm, and said transparent film is 5 μm to 30 μm in thickness.
3. The radiation detector according to any one of claims 1 to 2 , wherein said image sensor panel has a circuit section electrically connected to said photoelectric detectors.
4. The radiation detector according to any one of claims 1 to 2 , wherein the number of said plurality of image sensor panels is two.
5. The radiation detector according to any one of claims 1 to 2 , wherein the number of said plurality of image sensor panels is four, and the four image sensor panels are connected to each other in two-by-two array.
6. The radiation detector according to any one of claims 1 to 2 , further comprising a protective film covering said scintillator for sealing.
7. A method for manufacturing a radiation detector, the method comprising steps of:
preparing a plurality of image sensor panels each of which has a light receiving section formed by two-dimensionally arranging a plurality of photoelectric detectors on a substrate in the vicinity of at least one side of the substrate,
arranging said image sensor panels on a base so that the light receiving sections are adjacent to each other,
forming a surface-flat, transparent film to integrally cover a surface of the whole of the light receiving sections of the image sensor panels, including gaps generated therebetween, and
forming a scintillator directly on said transparent film,
wherein a gap generated between said plurality of image sensor panels is 50 μm or less, and said transparent film is 2 μm to 30 μm in thickness.
8. The method according to claim 7 , further comprising a step of forming a protective film covering the scintillator for sealing.
9. A method for manufacturing a radiation detector, the method comprising steps of:
preparing a plurality of image sensor panels each of which has a light receiving section formed by two-dimensionally arranging a plurality of photoelectric detectors on a substrate in the vicinity of at least one side of the substrate,
arranging said image sensor panels on a base so that the light receiving sections are adjacent to each other,
forming a surface-flat, transparent film to integrally cover a surface of the whole of the light receiving sections of the image sensor panels, including gaps generated therebetween, and
forming a scintillator directly on said transparent film,
wherein a gap generated between said plurality of image sensor panels is 50 μm to 70 μm, and said transparent film is 5 μm to 30 μm in thickness.