IP Library › Granted Patent US 7,026,169
Granted Patent B2
US 7,026,169 · App. 10/800,722 · Granted Apr 11, 2006

Method of forming PZT ferroelectric film

Assignee: Seiko Epson Corporation
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Quick Facts
Patent No.
US 7,026,169
App. No.
10/800,722
Granted
Apr 11, 2006
Kind
B2
Abstract

A method of forming a ferroelectric film including a complex oxide of PZT family on a metal film formed of Pt by using a metalorganic chemical vapor deposition method. At first, supply of Pb is started to form an alloy film of Pb and Pt on the metal film. Supply of Ti is then started to form an initial crystal nuclei of PbTiO 3 on the alloy film. Then, supply of Zr is started to form a crystal grown layer of the complex oxide of PZT family on the initial crystal nuclei.

Claims (18)

1. A method of forming a ferroelectric film including a complex oxide of lead zirconate titanate (PZT) family on a metal film formed of platinum (Pt) by using a metalorganic chemical vapor deposition method, the method comprising:

starting supply of lead (Pb) to form an alloy film of Pb and Pt on the metal film, the alloy film being formed in an inert gas atmosphere;

starting supply of titanium (Ti) and an oxidizing gas at the same time to form initial crystal nuclei of a lead titanate (PbTiO 3 ) on the alloy film; and

starting supply of zirconium (Zr) to form a crystal grown layer of the complex oxide of PZT family on the initial crystal nuclei.

2. The method of forming a ferroelectric film as defined in claim 1 ,

the initial crystal nuclei being formed in an island pattern.

3. A method of forming a ferroelectric film including a complex oxide of lead zirconate titanate (PZT) family on a metal film formed of platinum (Pt) by using a metalorganic chemical vapor deposition method, the method comprising:

starting supply of lead (Pb) to form an alloy film of Pb and Pt on the metal film, the alloy film is formed at about 150° C.;

starting supply of titanium (Ti) to form initial crystal nuclei of a lead titanate (PbTiO 3 ) on the alloy film; and

starting supply of zirconium (Zr) to form a crystal grown layer of the complex oxide of PZT family on the initial crystal nuclei.

4. The method of forming a ferroelectric film as defined in claim 3 , the initial crystal nuclei being formed in an island pattern.

5. A method of forming a ferroelectric film including a complex oxide of lead zirconate titanate (PZT) family on a metal film formed of platinum (Pt) by using a metalorganic chemical vapor deposition method, the method comprising:

forming an alloy film of Pb and Pt on the metal film, the alloy film being formed in an inert gas atmosphere;

form initial crystal nuclei of a lead titanate (PbTiO 3 ) on the alloy film in an oxidizing gas atmosphere; and

forming a crystal grown layer of the complex oxide of PZT family on the initial crystal nuclei.

6. A method of forming a ferroelectric film including a complex oxide of lead zirconate titanate (PZT) family on a metal film formed of platinum (Pt) by using a metalorganic chemical vapor deposition method, the method comprising:

forming an alloy film of Pb and Pt on the metal film at about 150° C.; forming initial crystal nuclei of a lead titanate (PbTiO 3 ) on the alloy film; and

forming a crystal grown layer of the complex oxide of PZT family on the initial crystal nuclei.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 2, 2004
From: KIJIMA, TAKESHI; HAMADA, YASUAKI; NATORI, EIJI
To: SEIKO EPSON CORPORATION
Reel/Frame 014932/0276 →
Priority Claims (1)
JP 2003-071953 · Mar 17, 2003 · national
Continuity (1)
Related Publication 20040259275A1 · Dec 23, 2004