Insulating film and electronic device
An insulating film comprising: a first barrier layer;a well layer provided; and a second barrier layer is proposed. The first barrier layer consists of a material having a first bandgap and a first relative permittivity. The well layer is provided on the first barrier layer, and consists of a material having a second bandgap smaller than the first bandgap and having a second relative permittivity larger than first relative permittivity. Discrete energy levels are formed in the well layer by a quantum effect. The second barrier layer is provided on the well layer, and consists of a material having a third bandgap larger than the second bandgap and having a third relative permittivity smaller than second relative permittivity. Alternatively, an insulating film comprising: n (n being an integer larger than 2) layers of barrier layer consisting of a material having a bandgap larger than a first bandgap and having a relative permittivity smaller than a first relative permittivity; and (n−1) layers of well layers consisting of a material having a bandgap smaller than the first bandgap and having a relative permittivity larger than the first relative permittivity, discrete energy levels being formed in the well layer by a quantum effect, each of the barrier layers and each of the well layers being stacked by turns, and discrete energy levels being formed in each of the well layers by a quantum effect, is provided. Alternatively, an insulating film having a lattice mismatch within a range of plus-or-minus 1.5% to the substrate, and further having a high barrier and a large permittivity is provided.
1. An insulating film comprising:
n (n being an integer larger than 2) layers of barrier layer each consisting of a material having a bandgap larger than a first bandgap and having a relative permittivity smaller than a first relative permittivity; and
(n−1) layers each consisting of a material having a bandgap smaller than the first bandgap and having a relative permittivity larger than the first relative permittivity,
each of the barrier layers and each of the well layers being stacked by turns,
discrete energy levels being formed in each of the well layers by a quantum effect,
each of the barrier layers having a thickness not smaller than 2.5 angstroms, and
the following condition being satisfied;
2.5>( d 1 /∈ 1 + d 2 /∈ 2 + . . . + dn/∈n )
where dm (m=1, 2, . . . n) is the thickness of the m-th layer of the barrier layers and ∈m (m=1, 2, . . . n ) is the relative permittivity of m-th layer of the barriers layers.
2. The insulting film according to claim 1 , wherein
the barrier layers each have a thickness not smaller than 3.5 angstroms.
3. The insulting film according to claim 1 , wherein
a thickness of at least one of the well layers is not larger than 5 angstroms.
4. An insulating film comprising:
n (n being an integer larger than 2) layers of barrier layers each consisting of a material having a conduction band whose energy level is higher than an energy level of a conduction band of silicon by 0.5 electron volts or more and having a valence band whose energy level is lower than an energy level of a valence band of silicon by 0.5 electron volts or more; and
(n−1) layers of well layers consisting of a material having a bandgap smaller than a bandgap of SiO 2 and having a relative permittivity larger than a relative permittivity of SiO 2 , and thicknesses of the well layers being not larger than 10 angstroms,
each of the barrier layers and each of the well layers being stacked by turns to form a multi-quantum well structure,
each of the barrier layers having a thickness not smaller than 2.5 angstroms, and
the following condition being satisfied;
2.5>( d 1 /∈ 1 + d 2 /∈ 2 + . . . + dn/∈n )
where dm (m=1, 2, . . . n) is the thickness of the m-th layer of the barrier layers and ∈m (m=1, 2, . . . n ) is the relative permittivity of m-th layer of the barriers layers.
5. The insulting film according to claim 4 , wherein each barrier layer has a thickness not smaller than 3.5 angstroms.
6. The insulting film according to claim 4 , wherein at least one of the well layers has a thickness not larger than 5 angstroms.
7. An electronic device comprising:
a semiconductor layer;
an insulating film provided on the semiconductor layer, including
n (n being an integer larger than 1) layers of barrier layers each consisting of a material having a bandgap larger than a first bandgap and having a relative permittivity smaller than a first relative permittivity; and
(n−1) layers of well layers each consisting of a material having a bandgap smaller than the first bandgap and having a relative permittivity larger than the first relative permittivity,
each of the barrier layers and each of the well layers being stacked by turns, discrete energy levels being formed in each of the well layers by a quantum effect; and
each of the barrier layers having a thickness not smaller than 2.5 angstroms, and
the following condition being satisfied;
2.5>( d 1 /∈ 1 + d 2 /∈ 2 + . . . + dn/∈n )
where dm (m=1, 2, . . . n) is the thickness of the m-th layer of the barrier layers and ∈m (m=1, 2, . . . n ) is the relative permittivity of m-th layer of the barriers layers; and
a gate electrode provided on the insulating film,
an electric field in the semiconductor layer under the insulating film being controllable by applying a voltage to the gate electrode.
8. The electronic device according to claim 7 , wherein each barrier layer has a thickness not smaller than 3.5 angstroms.
9. The electronic device according to claim 7 , wherein at least one of the well layers has a thickness not larger than 5 angstroms.