IP Library › Granted Patent US 7,033,665
Granted Patent B2
US 7,033,665 · App. 10/761,149 · Granted Apr 25, 2006

Precision mask for deposition and a method for manufacturing the same, an electroluminescence display and a method for manufacturing the same, and electronic equipment

Assignee: Seiko Epson Corporation
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Quick Facts
Patent No.
US 7,033,665
App. No.
10/761,149
Granted
Apr 25, 2006
Kind
B2
Abstract

A precision mask for deposition is provided that includes a first brace having a plurlaity of sections placed in parallel to each other at given intervals. The first brace forms portions that define a plurality of first openings. The precision mask for deposition also includes at least one second brace that is placed on the first brace so as to intersect with the first brace. The second brace forms portions that define a plurality of second openings. The second brace is joined to the first brace at a point where the second brace intersects with the first brace.

Claims (21)

1. A precision mask for deposition, comprising:

a first brace including a plurlaity of sections parallel to each other at given intervals, the first brace forming portions that define a plurality of first openings;

a second brace on the first brace and intersecting with the first brace;

the second brace forming portions that define a plurality of second openings; and

the second brace being joined to the first brace at a point where the second brace intersects the first brace.

2. The precision mask for deposition according to claim 1 , further comprising:

a mask substrate;

wherein the first brace and the second brace are joined to the mask substrate.

3. The precision mask for deposition according to claim 2 ,

wherein the mask substrate comprises single crystal silicon.

4. The precision mask for deposition according to claim 3 ,

wherein at least one of side surfaces of the first brace and side surfaces of the second brace is of surface orientation ( 111 ).

5. The precision mask for deposition according to claim 3 ,

wherein the mask substrate comprises single crystal silicon of surface orientation ( 110 );

side surfaces of the first brace are perpendicular ( 111 ) to surface orientation ( 110 ) of the mask substrate; and

side surfaces of the second brace are perpendicular ( 111 ) to surface orientation ( 110 ) of the mask substrate.

6. The precision mask for deposition according to claim 3 ,

wherein the mask substrate comprises single crystal silicon having an oxygen concentration of 1.7*10 18 atm/cm 3 or below.

7. A precision mask for deposition, comprising:

a first brace including a plurality of first spaced apart parallel ribs defining a plurality of first openings; and

a second brace including a plurality of second spaced apart parallel ribs defining a plurality of second openings, the first brace being joined to the second brace where the first ribs intersect the second ribs.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 30, 2013
From: SEIKO EPSON CORPORATION
To: INTELLECTUAL KEYSTONE TECHNOLOGY LLC
Reel/Frame 030321/0510 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 24, 2004
From: YOTSUYA, SHINICHI; KUWAHARA, TAKAYUKI
To: SEIKO EPSON CORPORATION
Reel/Frame 015511/0062 →
Priority Claims (1)
JP 2003-011451 · Jan 20, 2003 · national
Continuity (1)
Related Publication 20040214449A1 · Oct 28, 2004