Method of manufacturing of thin based substrate
Embodiments of the invention provide a device with a die and a substrate having a similar coefficient of thermal expansion to that of the die. The substrate may comprise a silicon base layer. Build up layers may be formed on the side of the base layer further from the die.
1. A method, comprising:
forming a dielectric layer on a first side of a silicon layer;
forming conductive trace layer on the dielectric layer;
thinning the silicon layer after forming the conductive traces; and
forming vias through the thinned silicon layer, the vias being electlically connected to the traces;
forming a first plurality of conductive pads on the second side of the silicon layer, the conductive pads being electrically connected to the vias;
positioning the second side of the thinned silicon layer adjacent a microelectronic die with a plurality of electronic contacts; and
electrically and mechanically coupling the first plurality of conductive pads to the plurality of electronic contacts.
2. The method of claim 1 , further comprising:
forming a second dielectric layer on the conductive trace layer;
forming a second plurality of conductive pads on the second dielectric layer, the second plurality of conductive pads being electrically connected to the vias by traces in the conductive trace layer;
positioning the second plurality of conductive pads adjacent a printed circuit board; and
electrically and mechanically coupling the second plurality of conductive pads to the printed circuit board.
3. The method of claim 2 , wherein the first plurality of conductive pads has a first pitch and the second plurality of conductive pads having a second pitch larger than the first pitch.
4. The method of claim 1 , further comprising forming a plurality of devices on the silicon layer.
5. A method, comprising:
forming a substrate, comprising:
forming a plurality of build up layers, including a plurality of conductive layers and a plurality of dielectric layers, on a first major surface of a base layer;
thinning the base layer after forming the build up layers;
forming holes through the thinned base layer; and
forming conductive vias in the holes, the conductive vias being electrically connected to the plurality of conductive layers;
positioning the substrate adjacent a microelectronic die;
coupling the substrate to the die; and
wherein the substrate and the die have substantially similar coefficients of thermal expansion.
6. The method of claim 5 , wherein the base layer comprises silicon.
7. The method of claim 6 , wherein, after the substrate is coupled to the die, a second major surface of the substrate opposite to the first major surface is positioned adjacent the die.
8. The method of claim 7 , wherein at least portions of the second major surface comprises a surface of the silicon base layer.