Electro-optical device providing enhanced TFT life

1. An electro-optical device, comprising:

a first substrate;

a second substrate;

an electro-optical material in between the first and second substrates;

data lines extending in a first direction;

scanning lines extending in a second direction in such a manner that the scanning lines and data lines cross each other;

pixel electrodes and thin-film transistors each placed in regions corresponding to intersections of the scanning lines and data lines, the thin-film transistor disposed in between the first substrate and the data lines;

storage capacitors each disposed in between the first substrate and the data lines and each electrically connected to corresponding ones of the thin-film transistors and pixel electrodes;

a capacitor line disposed in between the electro-optical material and the data lines;

first junction electrodes formed using the same film as that for forming the data lines, each first junction electrode electrically connecting a corresponding constant potential capacitor electrode and the capacitor line; and

second junction electrodes formed using the same film as that for forming the data lines, each second junction electrode electrically connecting a corresponding pixel potential capacitor electrode of a storage capacitor and pixel electrodes,

wherein the data lines, first junction electrodes, and second junction electrodes each include a nitride film.

2. The electro-optical device according to claim 1 , wherein the data lines, first junction electrodes, and second junction electrodes each include the nitride film on a conductive layer.

3. The electro-optical device according to claim 2 , wherein the data lines, first junction electrodes, and second junction electrodes have laminated layer structure including an aluminum film, titanium nitride film, and silicon nitride film.

4. The electro-optical device according to claim 1 further comprising third junction electrodes formed using the same film as that for forming the capacitor line, wherein the first junction electrodes are each electrically connected to the corresponding pixel electrodes with the corresponding third junction electrodes.

5. The electro-optical device according to claim 4 , wherein the capacitor line and third junction electrodes each include a conductive layer and a nitride film disposed thereon.

6. The electro-optical device according to claim 5 , wherein the capacitor line and third junction electrodes have laminated layer structure including an aluminum film, titanium nitride film, and silicon nitride film.

7. The electro-optical device according to claim 4 further comprising fourth junction electrodes formed on an insulating layer on which the thin-film transistors are formed, wherein the pixel potential capacitor electrodes are each electrically connected to the corresponding first junction electrodes with the corresponding fourth junction electrodes.

8. The electro-optical device according to claim 7 , wherein the fourth junction electrodes are formed using the same film for forming gate electrodes of the thin-film transistors.

9. The electro-optical device according to claim 1 , wherein the scanning lines are placed below the thin-film transistors and each electrically connected to the corresponding gate electrodes with contact holes, the gate electrodes being each disposed on corresponding semiconductor layers each included in the corresponding thin-film transistors.

10. The electro-optical device according to claim 1 , wherein the storage capacitors each include corresponding dielectric layers each disposed between the corresponding pixel potential capacitor electrodes and constant potential capacitor electrodes, the dielectric layers include a plurality of sub-layers containing different materials, and one of the sub-layers contains a material having a dielectric constant larger than those of the materials of the other layers.

11. The electro-optical device according to claim 10 , wherein the dielectric layers each include corresponding silicon dioxide sub-layers and silicon nitride sub-layers.

12. The electro-optical device according to claim 1 , wherein the capacitor line is made of a light-shielding film and extend along the corresponding data lines and have a width larger than that of the data lines.

13. The electro-optical device according to claim 1 further comprising a first insulating layer disposed under the pixel electrodes as the base and a second insulating layer disposed under the capacitor line as the base, wherein at least the surface of the first insulating layer is planarized.

14. An electronic apparatus including an electro-optical device, the electro-optical device comprising, above a substrate:

data lines extending in a first direction; scanning lines extending in a second direction in such a manner that the scanning lines and data lines cross each other; pixel electrodes and thin-film transistors each placed in corresponding regions corresponding to intersections of the scanning lines and data lines; the storage capacitors disposed below the data lines and each electrically connected to the corresponding thin-film transistors and pixel electrodes; capacitor line disposed above the data lines; first junction electrodes, formed using the same film as that for forming the data lines, for each electrically connecting the corresponding pixel potential capacitor electrodes and pixel electrodes; and second junction electrodes, formed using the same film as that for forming the data lines, for each electrically connecting the corresponding constant potential capacitor electrodes and the capacitor line,

wherein the data lines, first junction electrodes, and second junction electrodes each include a nitride film.

15. An electro-optical device, comprising:

a substrate;

data lines extending in a first direction;

scanning lines extending in a second direction in such a manner that the scanning lines and data lines cross each other;

pixel electrodes and thin-film transistors each placed in regions corresponding to intersections of the scanning lines and data lines, the thin-film transistor disposed below the data lines;

storage capacitors each disposed below the data lines and each electrically connected to the corresponding thin-film transistors and pixel electrodes;

a shielding layer disposed below the pixel electrodes and disposed to cover the data lines;

first junction electrodes, formed using the same film as that for forming the data lines, for each electrically connecting the corresponding constant potential capacitor electrodes and the shielding layer,

second junction electrodes, formed using the same film as that for forming the data lines, for each electrically connecting the corresponding pixel potential capacitor electrodes of the storage capacitors and pixel electrodes; and

wherein the data lines, first junction electrodes, and second junction electrodes each include a nitride film.