High capacitance package substrate
A high capacitance substrate. The substrate includes a core tolerant to sintering thereon of a high k material to provide increased capacitance. The core may be non-ceramic. The material sintered thereon may have a dielectric constant in excess of about 4. The substrate may be a package substrate electrically coupled to a die.
1. A substrate comprising:
a core having at least one high capacitance via and at least one high speed via therethrough, wherein the at least one high speed via comprises a low k dielectric material and the at least one high capacitance via comprises a high k dielectric material; and
a material sintered on the core to increase a capacitance thereof, the core having a tolerance to sintering of the material thereon.
2. The substrate of claim 1 wherein said material is one of barium titanate, barium strontium titanate and tantalum pentoxide.
3. The substrate of claim 1 wherein said core is of one of copper and a nickel iron alloy.
4. The substrate of claim 1 wherein the core is non-ceramic.
5. The substrate of claim 1 wherein said core includes a coefficient of thermal expansion tailored to substantially match a coefficient of thermal expansion of a silicon based material.
6. The substrate of claim 1 wherein the tolerance is to sintering by application of a temperature of up to about 1,083° C.
7. The substrate of claim 1 for one of a printed circuit board, a semiconductor package, and a die.
8. The substrate of claim 1 wherein said material forms a first layer on a first side of said core and a second layer on a second side of said core.
9. A substrate comprising:
a core having at least one via therethrough, wherein at least one of the at least one vias comprise a low k dielectric material;
a material sintered on the core to increase a capacitance thereof, the core having a tolerance to sintering of the material thereon, wherein said material is a first material comprising a high k dielectric material, and each via of said at least one via accommodating one of said first material and the low k dielectric material, wherein the low k dielectric material comprises a dielectric constant of less than about 4.
10. A system comprising:
a printed circuit board; and
a semiconductor package coupled to the printed circuit board and including a package substrate, with a die coupled thereto and a core with a material sintered thereon to provide a capacitance thereto, wherein the core is tolerant to a sintering temperature of up to about 1,427° C. and wherein the package substrate comprises at least one high capacitance via and at least one high speed via therethrough, wherein the high speed via comprises a low k dielectric material.
11. The system of claim 10 wherein the capacitance is a first capacitance, said package substrate having a second capacitance provided by the at least one high capacitance via.
12. A substrate comprising:
a core having at least one high capacitance via and at least one high speed via therethrough, wherein the at least one high speed via comprises a low k dielectric material;
a material sintered on the core to increase a capacitance thereof, the core having a tolerance to sintering of the material thereon, wherein the core is tolerant to a sintering temperature of up to about 1,427° C.