Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
Disclosed is a natural-superlattice homologous single-crystal thin film, which includes a complex oxide which is epitaxially grown on either one of a ZnO epitaxial thin film formed on a single-crystal substrate, the single-crystal substrate after disappearance of the ZnO epitaxial thin film and a ZnO single crystal. The complex oxide is expressed by the formula: M 1 M 2 O 3 (ZnO) m , wherein M 1 is at least one selected from the group consisting of Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho and Y, M 2 is at least one selected from the group consisting of Mn, Fe, Ga, In and Al, and m is a natural number of 1 or more. A natural-superlattice homologous single-crystal thin film formed by depositing the complex oxide and subjecting the obtained layered film to a thermal anneal treatment can be used in optimal devices, electronic devices and X-ray optical devices.
1. A natural-superlattice homologous single-crystal thin film comprising a complex oxide which is epitaxially grown on a ZnO epitaxial thin film, said complex oxide being expressed by the following formula:
M 1 M 2 O 3 (ZnO) m ,
wherein M 1 is at least one selected from the group consisting of Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho and Y,
M 2 is at least one selected from the group consisting of Mn, Fe, Ga, In and Al, and
m is a natural number of 1 or more and wherein said thin film has a natural-superlattice homologous single-crystal structure.
2. A natural-superlattice homologous single-crystal thin film comprising a complex oxide which is epitaxially grown on a ZnO epitaxial thin film,
wherein said ZnO epitaxial thin film is grown on a single-crystal substrate in advance of the growth of said complex oxide, and vanished during the growth of said complex oxide to allow said epitaxially grown complex oxide to reside directly on said single-crystal substrate,
wherein said complex oxide is expressed by the following formula:
M 1 M 2 O 3 (ZnO) m ,
wherein M 1 is at least one selected from the group consisting of Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho and Y,
M 2 is at least one selected from the group consisting of Mn, Fe, Ga, In and Al, and
m is a natural number of 1 or more, and
wherein said thin film has a natural-superlattice homologous single-crystal structure.
3. A natural-superlattice homologous single-crystal thin film comprising a complex oxide which is epitaxially grown on a ZnO single crystal, said complex oxide being expressed by the following formula:
M 1 M 2 O 3 (ZnO) m ,
wherein M 1 is at least one selected from the group consisting of Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho and Y,
M 2 is at least one selected from the group consisting of Mn, Fe, Ga, In and Al, and
m is a natural number of 1 or more, and
wherein said thin film has natural-superlattice homologous single-crystal structure.
4. The homologous single-crystal thin film as defined in either one of claims 1 to 3 , wherein the difference of said m in the thickness direction of said thin film is±1 or less.
5. The homologous single-crystal thin film as defined in either one of claims 1 to 3 , wherein said m is continuously changed in the thickness direction of said thin film.
6. The homologous single-crystal thin film as defined in either one of claims 1 to 3 , which includes a surface region which has atomic level smoothness and an area of 0.5 μm×0.5 μm.
7. A method of producing a natural-superlattice homologous single-crystal thin film, comprising:
depositing an epitaxially grown complex oxide thin film on either one of a ZnO single crystal and a ZnO epitaxial thin film, said complex oxide being expressed by the formula M 1 M 2 O 3 (ZnO) n (wherein: M 1 is at least one selected from the group consisting of Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho and Y; M 2 is at least one selected from the group consisting of Mn, Fe, Ga, In and Al; and n is a natural number of 1 or more), and
subjecting said deposited film to a thermal anneal treatment,
wherein said thin film has a natural-superlattice homologous single-crystal structure.
8. The method as defined in claim 7 , wherein said thermal anneal treatment is performed while covering said deposited film with a high-melting-point compound plate to prevent the vaporization of ZnO from said deposited film.
9. The method as defined in claim 7 , wherein said thermal anneal treatment is performed under the presence of ZnO vapor to prevent the vaporization of ZnO from said deposited film.
10. An optical, X-ray optical or electronic device comprising the homologous single-crystal thin film as defined in either one of claims 1 to 3 .
11. A transparent-thin-film field-effect transistor comprising an active layer consisting of the homologous single-crystal thin film as defined in either one of claims 1 to 3 , wherein said M 1 M 2 O 3 (ZnO) m is InMO 3 (ZnO) m , wherein M is at least one selected from the group consisting of In, Fe, Ga and Al, and m is an integer in the range of 1 to less than 50.
12. The transparent-thin-film field-effect transistor as defined in claim 11 , wherein said homologous single-crystal thin film is formed on a heat-resistant transparent oxide single-crystal substrate.