Silazane compound amd methods for using the same
An adhesive compound for use with a photoresist, the compound represented in accordance with the following chemical formula, A method for forming a photoresist pattern using the adhesive compound is also disclosed.
1. A (dichlorotetramethyl)disilazane compound having the chemical formula,
2. The method of claim 1 , wherein the adhesive compound exhibits a chemical shift (δ-shift) of about 0.03 ppm (s, 9H) and a chemical shift of about 0.47 ppm (s, 3H) when the adhesive compound is analyzed with proton magnetic resonance (1H-NMR) spectroscopy using C 6 D 6 as a solvent.
3. The compound of claim 1 , wherein baking is performed at a temperature of about 90° C. to about 120° C.
4. The method of claim 1 , further comprising forming an anti-reflective layer between the substrate and the adhesive layer.
5. The method of claim 1 , further comprising forming a conductive layer or an insulating layer between the substrate and the adhesive layer.
6. The method of claim 1 , further comprising exposing the photoresist film to a light; and
developing the photoresist film to form a photoresist pattern on the substrate.
7. The method of claim 5 , wherein the light is a G-line, an I-line, a krypton fluoride laser, an argon fluoride laser, an e-beam, or an X-ray.
8. A method for forming a photoresist pattern comprising:
forming an adhesive layer containing an adhesive compound having the following chemical formula on a substrate,
forming a photoresist film on the adhesive layer;
baking the photoresist film formed on the substrate;
exposing the photoresist film to a light; and
developing the photoresist film to form a photoresist pattern on the substrate.
9. The method of claim 8 , wherein the adhesive compound exhibits a chemical shift (δ-shift) of about 0.03 ppm (s, 9H) and a chemical shift of about 0.47 ppm (s, 3H) when the compound is analyzed with proton magnetic resonance (1H-NMR) spectroscopy using C 6 D 6 as a solvent.
10. The method of claim 8 , wherein the light is a G-line, an I-line, a krypton fluoride laser, an argon fluoride laser, an e-beam, or an X-ray.
11. The method of claim 8 , wherein baking is performed at a temperature of about 90° C. to about 120° C.
12. The method of claim 8 , further comprising forming a conductive layer or an insulating layer between the substrate and the adhesive layer.
13. The method of claim 8 , wherein the adhesive compound is cross-linked another adhesive compound in accordance with baking the photoresist film.