Light-emitting apparatus and method for forming the same
In a light-emitting apparatus, a face of a substrate on which a light-emitting device is formed is an uneven surface having a plurality of asperities. The mean spacing Sm of adjacent asperities or the mean spacing S of peaks of adjacent projections of the asperities is no less than three times the longest wavelength of light generated by a light-emitting layer and no more than two hundred times the longest wavelength. The arithmetic mean slope Δa of the uneven surface is in a range between 4° and 30°, inclusive. Therefore, the apparatus emits substantially a greater amount of light from a light extraction side and has less brightness unevenness than a light-emitting apparatus with no uneven surface.
1. A light-emitting apparatus comprising a substrate and a light-emitting device provided on the substrate,
wherein the device includes a light-emitting layer located between a pair of electrodes, a face of the substrate on which the light-emitting device is formed is an uneven surface having a plurality of asperities, the mean spacing Sm of adjacent asperities or the mean spacing S of peaks of adjacent projections of the asperities is no less than three times the longest wavelength of light generated by the light-emitting layer and no more than two hundred times the longest wavelength, wherein at least one of the following requirements (i)–(vi) is satisfied:
(i) the arithmetic mean slope Δa of the uneven surface is in a range between 4° and 30°, inclusive;
(ii) the root mean square slope Δq of the uneven surface is in a range between 4° and 35°;
(iii) the ratio Ra/Sm of the arithmetic mean roughness Ra of the uneven surface to the mean spacing Sm of asperities is in a range between 0.008 and 0.09, inclusive;
(iv) the ratio Ra/S of the arithmetic mean roughness Ra to the mean spacing S of peaks is in a range between 0.009 and 0.10, inclusive;
(v) the ratio Rz/Sm of the ten-point height of irregularities Rz of the uneven surface to the mean spacing Sm of asperities is in a range between 0.05 and 0.22, inclusive; and
(vi) the ratio Rz/S of the ten-point height of irregularities Rz to the mean spacing S of peaks is in a range between 0.05 and 0.25, inclusive.
2. The apparatus according to claim 1 , wherein at least the requirement (i) is satisfied.
3. The apparatus according to claim 1 , wherein at least the requirement (ii) is satisfied.
4. The apparatus according to claim 1 , wherein at least the requirement (iii) is satisfied.
5. The apparatus according to claim 1 , wherein at least the requirement (iv) is satisfied.
6. The apparatus according to claim 1 , wherein at least the requirement (v) is satisfied.
7. The apparatus according to claim 1 , wherein at least the requirement (vi) is satisfied.
8. The apparatus according to claim 1 , wherein the light-emitting device is curved along the uneven surface.
9. The apparatus according to claim 8 , wherein the light-emitting layer has a first face at a side facing the substrate and a second face that is opposite from the first face, wherein the first and second faces are curved along the uneven surface, and the projections of the first face correspond to the depressions of the second face, and the depressions of the first face correspond to the projections of the second face.
10. The apparatus according to claim 8 , wherein the electrodes and the light-emitting layer are each formed to have a constant thickness.
11. The apparatus according to claim 1 , wherein a prism sheet is provided on a side where light generated by the light-emitting layer is extracted.
12. The apparatus according to claim 1 , wherein the light-emitting device is an organic electroluminescent device.
13. A method for manufacturing a light-emitting apparatus having a light-emitting layer, comprising:
preparing a substrate;
forming an uneven surface having a plurality of asperities on a face of the substrate, wherein the mean spacing Sm of adjacent asperities or the mean spacing S of peaks of adjacent projections of the asperities is no less than three times the longest wavelength of light generated by the light-emitting layer and no more than two hundred times the longest wavelength, wherein the uneven surface is formed such that at least one of the following requirements (i)–(vi) is satisfied:
(i) the arithmetic mean slope Δa of the uneven surface is in a range between 4° and 30°, inclusive;
(ii) the root mean square slope Δq of the uneven surface is in a range between 4° and 35°;
(iii) the ratio Ra/Sm of the arithmetic mean roughness Ra of the uneven surface to the mean spacing Sm of asperities is in a range between 0.008 and 0.09, inclusive;
(iv) the ratio Ra/S of the arithmetic mean roughness Ra to the mean spacing S of peaks is in a range between 0.009 and 0.10, inclusive;
(v) the ratio Rz/Sm of the ten-point height of irregularities Rz of the uneven surface to the mean spacing Sm of asperities is in a range between 0.05 and 0.22, inclusive; and
(vi) the ratio Rz/S of the ten-point height of irregularities Rz to the mean spacing S of peaks is in a range between 0.05 and 0.25, inclusive, and
forming on the uneven surface a light-emitting device having the light-emitting layer and a pair of electrodes between which the light-emitting layer is located such that the light-emitting device is curved along the uneven surface.