Method of making barrier layers
The present invention involves a low-temperature, photoresist-free method of fabricating a barrier layer on a flexible substrate. An embodiment involves the conversion of a precursor into a top-surface imaging layer during a direct patterning step. Preferred precursors are formed from a metal complex comprising at least one ligand selected from the group consisting of acac, carboxylato, alkoxy, azide, carbonyl, nitrato, amine, halide, nitro, and mixtures thereof and at least one metal selected from the group consisting of Li, Al, Si, Ti, V, Cr, Mn, Fe, Ni, Co, Cu, Zn, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Ba, La, Pr, Sm, Eu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Pb, Th, U, Sb, As, Ce, Mg, and mixtures thereof.
1. A method of forming a barrier layer on a substrate comprising the steps of:
selecting at least one precursor material;
depositing substantially amorphous layer comprising the precursor atop a substrate;
converting at least a portion of the precursor layer; and
developing the precursor layer.
2. The method of claim 1 , further comprising developing away an unconverted portion of the precursor layer with a developer.
3. The method of claim 1 , wherein the substrate is flexible.
4. The method of claim 3 , wherein the substrate is plastic.
5. The method of claim 1 , further comprising selecting the at least one precursor material from a metal complex comprising at least one ligand selected from the group consisting of acac, carboxylato, alkoxy, azide, carbonyl, nitrato, amine, halide, nitro, and mixtures thereof and at least one metal selected from the group consisting of Li, Al, Si, Ti, V, Cr, Mn, Fe, Ni, Co, Cu, Zn, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Ba, La, Pr, Sm, Eu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Pb, Th, U, Sb, As, Ce, Mg, and mixtures thereof.
6. The method of claim 1 , wherein the barrier layer is transparent.
7. A photoresist-free method of forming a barrier layer on a substrate, comprising the steps of:
selecting at least one precursor material;
depositing a substantially amorphous layer comprising the unconverted precursor atop the substrate;
exposing at least a portion of the unconverted precursor to electromagnetic radiation;
substantially removing at least a portion of the unconverted precursor to leave an amorphous film with barrier layer properties; wherein said substrate is flexible.
8. The method of claim 7 , further comprising converting with an energy source selected from light, electron beam irradiation, ion beam irradiation, and mixtures thereof.
9. The method of claim 8 , further comprising substantially removing at least a portion of the unconverted precursor layer by using a developer.
10. The method of claim 7 , further comprising selecting the at least one precursor material from a metal complex comprising at least one ligand selected from the group consisting of acac, carboxylato, alkoxy, azide, carbonyl, nitrato, amine, halide, nitro, and mixtures thereof and at least one metal selected from the group consisting of Li, Al, Si, Ti, V, Cr, Mn, Fe, Ni, Co, Cu, Zn, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Ba, La, Pr, Sm, Eu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Pb, Th, U, Sb, As, Ce, Mg, and mixtures thereof.
11. The method of claim 1 , wherein the barrier layer is formed at about ambient temperature.
12. The method of claim 7 , wherein the barrier layer is formed at about ambient temperature.
13. A method of forming a barrier layer on a substrate comprising the steps of:
selecting at least one precursor material;
forming a substantially amorphous layer comprising the precursor over a substrate;
converting at least a portion of the precursor layer at about ambient temperature.
14. The method of claim 13 , wherein the substrate is flexible.
15. The method of claim 14 , wherein the substrate is plastic.
16. The method of claim 13 , further comprising selecting the at least one precursor material from a metal complex comprising at least one ligand selected from the coup consisting of acac, carboxylato, alkoxy, azide, carbonyl, nitrato, amine, halide, nitro, and mixtures thereof and at least one metal selected from the group consisting of Li, Al, Si, Ti, V, Cr, Mn, Fe, Ni, Co, Cu, Zn, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Ba, La, Pr, Sm, Eu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Pb, Th, U, Sb, As, Ce, Mg, and mixtures thereof.
17. The method of claim 13 , further comprising developing away an unconverted portion of the precursor layer with a developer.