High power radiation emitter device and heat dissipating package for electronic components
The electronic component package ( 10 ) of the present invention includes a sealed chamber; a liquid or gel ( 20 ) contained in the sealed chamber; at least one electronic component ( 12 ) disposed in the sealed chamber in physical and thermal contact with the liquid or gel ( 20 ); and at least one electrical conductor electrically coupled to the electronic component and extending out of the sealed chamber. The electronic component(s) ( 12 ) may include any one or combination of a radiation emitter, a thermal or optical sensor, a resistor, and a microprocessor or other semiconductor component.
1. An optical radiation emitting device comprising:
a sealed chamber;
a fluid intermediary material contained in said sealed chamber and having a refractive index greater than 1.0;
an inorganic electroluminescent semiconductor radiation emitter that emits optical radiation in response to an electrical signal, said inorganic electroluminescent semiconductor radiation emitter disposed in said sealed chamber in physical and thermal contact with said fluid intermediary material; and
first and second electrical conductors electrically coupled to said inorganic electroluminescent semiconductor radiation emitter for energizing said inorganic electroluminescent semiconductor radiation emitter.
2. The optical radiation emitting device of claim 1 , wherein said fluid intermediary material contained has a refractive index greater than about 1.3.
3. The optical radiation emitting device of claim 1 , wherein said fluid intermediary material contained has a refractive index greater than about 1.4.
4. The optical radiation emitting device of claim 1 , wherein said fluid intermediary medium is a liquid or gel.
5. The optical radiation emitting device of claim 1 , wherein said device exhibits a power density of at least about 2 Watts/in 2 .
6. The optical radiation emitting device of claim 5 , wherein said device exhibits a power density of at least about 5 Watts/in 2 .
7. The optical radiation emitting device of claim 6 , wherein said device exhibits a power density of at least about 10 Watts/in 2 .
8. The optical radiation emitting device of claim 1 , wherein said inorganic electroluminescent semiconductor radiation emitter is an LED chip.
9. The optical radiation emitting device of claim 8 , wherein said LED chip comprises one of the materials included in the group consisting of AlInGaP, InGaAlP, GaN, InGaN, AlInGaN, AlGaAs, GaP, GaAsP, SiC and ZnSe.
10. The optical radiation emitting device of claim 8 and further comprising a second LED chip.
11. The optical radiation emitting device of claim 10 , wherein said LED chips emit light of complementary colors that combine to form white light.
12. The optical radiation emitting device of claim 1 and further comprising a photoluminescent emitter.
13. The optical radiation emitting device of claim 12 , wherein said inorganic electroluminescent semiconductor radiation emitter and said photoluminescent emitter generate radiation with distinctly different peak wavelengths from one another.
14. The optical radiation emitting device of claim 13 , wherein the combined radiation generated by said inorganic electroluminescent semiconductor radiation emitter and said photoluminescent emitter form white light.
15. The optical radiation emitting device of claim 12 , wherein said photoluminescent emitter comprises a material selected from the group consisting of fluorescent phosphor, fluorescent dye, and fluorescent crystal layer.
16. The optical radiation emitting device of claim 12 , wherein said photoluminescent emitter is in contact with said inorganic electroluminescent semiconductor radiation emitter.
17. The optical radiation emitting device of claim 12 , wherein said photoluminescent emitter is in contact with a surface of said chamber.
18. The optical radiation emitting device of claim 1 , wherein said inorganic electroluminescent semiconductor radiation emitter comprises at least one electrode attached by means selected from the group consisting of: conductive epoxy die attach, eutectic die attach, solder, solder bump, and wire bond.
19. The optical radiation emitting device of claim 1 , wherein said inorganic electroluminescent semiconductor radiation emitter emits radiation with a peak wavelength in the visible portion of the optical spectrum.
20. The optical radiation emitting device of claim 1 , wherein said inorganic electroluminescent semiconductor radiation emitter emits radiation with a peak wavelength in the UV portion of the optical spectrum.
21. The optical radiation emitting device of claim 1 , wherein said inorganic electroluminescent semiconductor radiation emitter emits radiation with a peak wavelength in the IR portion of the optical spectrum.
22. An optical radiation emitting device comprising:
a metallic substrate;
a transparent cover attached to said metallic substrate to form a sealed chamber, said transparent cover comprising an integral lens;
a fluid intermediary material contained in said sealed chamber and having a refractive index greater than 1.0, said fluid intermediary material being substantially electrically nonconductive; and
an inorganic semiconductor radiation emitter mounted on a surface of said metallic substrate within said sealed chamber in physical and thermal contact with said fluid intermediary material, said inorganic semiconductor radiation emitter emitting optical radiation through said lens in response to an electrical signal.
23. The optical radiation emitting device of claim 22 and further comprising a heat sink in thermal contact with said metallic substrate.
24. The optical radiation emitting device of claim 22 , wherein said metallic substrate comprises a reflective cup formed therein in which said inorganic semiconductor radiation emitter is mounted.
25. The optical radiation emitting device of claim 22 , wherein said inorganic semiconductor radiation emitter is an LED chip.
26. The optical radiation emitting device of claim 22 and further comprising at least one additional inorganic semiconductor radiation emitter mounted on a surface of said metallic substrate within said sealed chamber in physical and thermal contact with said fluid intermediary material.
27. The optical radiation emitting device of claim 22 and further comprising first and second electrodes electrically coupled to said inorganic semiconductor radiation emitter for supplying an electrical signal thereto.