Semiconductor interconnect having semiconductor spring contacts
View Patent ↗An interconnect for testing a semiconductor component includes a substrate, and interconnect contacts on the substrate configured to electrically engage component contacts on the component. The interconnect contacts include flexible spring segments defined by grooves in the substrate, shaped openings in the substrate, or shaped portions of the substrate. The spring segments are configured to flex to exert spring forces on the component contacts, and to compensate for variations in the size or planarity of the component contacts. The interconnect can be configured to test wafer sized components, or to test die sized components. A test method includes the steps of providing the interconnect with the interconnect contacts, and electrically engaging the component contacts under a biasing force from the spring segments. A wafer level test system includes the interconnect mounted to a testing apparatus such as a wafer probe handler. A die level test system includes the interconnect mounted to a test carrier for discrete components.
1. An interconnect for a semiconductor component having a component contact comprising:
a substrate;
a spring segment comprising a hinged portion of the substrate defined by a groove in the substrate and having a raised terminal portion, the spring segment having a separation, a shape, a hinge point and a spring constant determined by the groove;
a conductive bump on the terminal portion configured to electrically engage the component contact; and
a conductor on the substrate in electrical communication with the conductive bump.
2. The interconnect of claim 1 wherein the interconnect includes a plurality of interconnect contacts comprising a plurality of spring segments defined and separated by a plurality of grooves in the substrate.
3. The interconnect of claim 1 wherein the interconnect includes a plurality of interconnect contacts and the component comprises a semiconductor die or a semiconductor package having a plurality of component contacts.
4. The interconnect of claim 1 wherein a length of the groove is from 2 to 160 times greater than a width of the grooves.
5. The interconnect of claim 1 wherein the conductive bump is configured to penetrate the component contact.
6. The interconnect of claim 1 wherein the substrate comprises a semiconductor material.
7. The interconnect of claim 1 further comprising a conductive via in the substrate in electrical communication with the conductive bump and the conductor.
8. An interconnect for a semiconductor component having a component contact comprising:
a semiconductor substrate; and
an interconnect contact on the substrate comprising a spring segment comprising a portion of the substrate defined by a generally C-shaped groove in the substrate separating the spring segment on three sides, and a conductive bump on the spring segment configured to electrically engage the component contact, the spring segment having a spring constant and hinge point determined by a shape of the groove.
9. The interconnect of claim 8 wherein a C-shape of the groove is rotated 180°.
10. The interconnect of claim 8 wherein the groove has an arcuate shape.
11. The interconnect of claim 8 wherein the groove has a generally C-shape rotated 180° and includes flared terminal portions.
12. The interconnect of claim 8 wherein a length of the groove is from 2 to 160 times greater than a width of the grooves.
13. The interconnect of claim 8 further comprising a conductive via in the substrate in electrical communication with the conductive bump.
14. The interconnect of claim 8 wherein the conductive bump comprises a projection configured to penetrate the component contact.
15. The interconnect of claim 8 wherein the spring segment comprises a raised terminal portion and the conductive bump is on the raised terminal portion.
16. The interconnect of claim 8 wherein the interconnect includes a plurality of interconnect contacts and the component comprises a semiconductor wafer having a plurality of component contacts.
17. The interconnect of claim 8 wherein the interconnect includes a plurality of patterns of interconnect contacts and the component comprises a semiconductor wafer comprising a plurality of semiconductor components having a plurality of patterns of component contacts.
18. The interconnect of claim 8 wherein the interconnect includes a plurality of interconnect contacts and the component comprises a semiconductor die or a semiconductor package having a plurality of component contacts.
19. An interconnect for testing a semiconductor wafer containing a plurality of semiconductor components having a plurality of component contacts comprising:
a semiconductor substrate;
a plurality of interconnect contacts on the substrate configured to electrically engage the component contacts, the interconnect contacts comprising hinged spring segment portions of the substrate defined and separated by a plurality of grooves in the substrate, each spring segment having a shape, a hinge point and a spring constant determined by a groove; and
a plurality of conductors on the substrate in electrical communication with the interconnect contacts.
20. The interconnect of claim 19 wherein the component contacts have a center to center pitch and the grooves have a width of from 0.0025 to 0.25 of the pitch.
21. The interconnect of claim 19 wherein a length of each groove is from 2 to 160 times greater than a width thereof.
22. The interconnect of claim 19 wherein the interconnect contacts comprise conductive bumps on the spring segment portions configured to physically and electrically contact the component contacts.
23. The interconnect of claim 19 wherein the component contacts comprise bumps and the interconnect contacts comprise plated recesses configured to retain and electrically engage the bumps.
24. The interconnect of claim 19 wherein the interconnect contacts comprise recesses at least partially filled with a metal.
25. The interconnect of claim 19 wherein the interconnect contacts comprise projections configured to penetrate the component contacts.
26. The interconnect of claim 19 further comprising a plurality of conductive vias in the spring segments in electrical communication with the conductors.
27. The interconnect of claim 19 wherein the substrate comprises silicon.