Semiconductor laser and method for manufacturing the same
View Patent ↗Provided is a semiconductor laser including a substrate etched into a mesa structure, an active layer, clad layers, a current blocking layer, an etch-stop, an ohmic contact layer, and electrodes, and a method for manufacturing the same, whereby it is possible to improve a ratio of light output to input current by blocking a leakage current flowing outside an active waveguide in a BH laser.
1. A semiconductor laser, comprising:
a substrate etched into a mesa structure;
an active layer formed directly on the mesa structure and being a core of a waveguide;
a first clad layer formed on the active layer;
a current blocking layer formed on the etched substrate in both sides of the mesa structure;
an etch-stop layer formed on the first clad layer and the current blocking layer;
a second clad layer formed on the etch-stop layer being located on an upper portion of the mesa structure, with a predetermined width;
an ohmic contact layer formed on the second clad layer;
a first electrode contacted with the ohmic contact layer; and
a second electrode formed on a bottom side of the substrate,
wherein the current blocking layer is formed by a first p type, an n type, and a second p type semiconductor layers.
2. The semiconductor laser as claimed in claim 1 , wherein the second p type semiconductor layer is formed with a thickness of 0.2 μm or less.
3. The semiconductor laser as claimed in claim 1 , wherein the second clad layer may be a p type semiconductor layer.
4. The semiconductor laser as claimed in claim 1 , further comprising a layer for planarization in both sides of the second clad layer and the ohmic contact layer.
5. A semiconductor laser, comprising:
a substrate etched into a mesa structure;
an active layer formed on the mesa structure and being a core of a waveguide;
a first clad layer formed on the active layer;
a current blocking layer formed on the etched substrate in both sides of the mesa structure;
an etch-stop layer formed on the first clad layer and the current blocking layer;
a second clad layer formed on the etch-stop layer being located on an upper portion of the mesa structure, with a predetermined width;
an ohmic contact layer formed on the second clad layer;
a first electrode contacted with the ohmic contact layer; and
a second electrode formed on a bottom side of the substrate;
wherein the current blocking layer is formed by a first p type, an n type, and second p type semiconductor layers, and
wherein the second p type semiconductor layer is formed with a thickness thinner than that of the first p type semiconductor layer.
6. The semiconductor laser as claimed in claim 5 , wherein the second clad layer may be a p type semiconductor layer.
7. The semiconductor laser as claimed in claim 5 , further comprising a layer for planarization in both sides of the second clad layer and the ohmic contact layer.
8. A semiconductor laser, comprising:
a substrate etched into a mesa structure;
an active layer formed on the mesa structure and being a core of a waveguide;
a first clad layer formed on the active layer;
a current blocking layer formed on the etched substrate in both sides of the mesa structure;
an etch-stop layer formed on the first clad layer and the current blocking layer;
a second clad layer formed on the etch-stop layer being located on an upper portion of the mesa structure, with a predetermined width;
an ohmic contact layer formed on the second clad layer;
a first electrode contacted with the ohmic contact layer; and
a second electrode formed on a bottom side of the substrate;
wherein the current blocking layer is formed by a first p type, an n type, and a second p type semiconductor layers;
wherein the second p type semiconductor layer is formed with a thickness thinner than that of the first p type semiconductor layer; and
wherein the second p type semiconductor layer is formed with a thickness of 0.2 μm or less.
9. The semiconductor laser as claimed in claim 8 , wherein the second clad layer may be a p type semiconductor layer.
10. The semiconductor laser as claimed in claim 8 , further comprising a layer for planarization in both sides of the second clad layer and the ohmic contact layer.