Wafer reuse techniques

1. A method comprising:

providing a first coating over a wafer;

testing a semiconductor tool using the coated wafer with the first coating; and

replacing at least a portion of the first coating over the wafer with a layer of a second coating, wherein each of the first coating and the second coating comprises at least one characteristic of a single crystal structure.

2. The method of claim 1 , further comprising testing surface contaminant adding properties of the semiconductor tool.

3. The method of claim 2 , wherein the testing surface contaminant adding properties comprises testing light scattering properties of a surface of the first coating over the wafer.

4. The method of claim 1 , wherein the at least one characteristic of the single crystal structure comprises insignificant distortion of an angle of refraction of incident light.

5. The method of claim 1 , wherein the providing the first coating comprises:

providing a polysilicon layer over the wafer; and

surface polishing the polysilicon layer.

6. The method of claim 1 , wherein the replacing comprises:

mechanically grinding a portion of the first coating;

providing a polysilicon layer over a portion of the wafer where the first coating was removed by grinding; and

surface polishing the polysilicon layer.

7. The method of claim 1 , further comprising removing contaminants from a surface of the first coating over the wafer used to test the semiconductor tool.

8. A method comprising:

replacing at least a portion of a first coating of a wafer with a layer of a second coating, wherein each of the first coating and the second coating has at least one characteristic of a single crystal structure; and

testing at least one characteristic of a semiconductor tool using the coated wafer with the second coating.

9. The method of claim 8 , wherein the replacing comprises:

mechanically grinding the first coating of the wafer;

providing a polysilicon layer over a portion of the waFer where the first coating was removed by grinding; and

surface polishing the polysilicon layer.

10. The method of claim 9 , wherein the replacing further comprises removing contaminants from a surface of the first coating of the wafer.

11. The method of claim 8 , further comprising testing surface contaminant adding properties of the semiconductor tool.

12. The method of claim 11 , wherein the testing surface contaminant adding properties comprises testing light scattering properties of a surface of the second coating of the wafer.

13. The method of claim 8 , wherein the at least one characteristic of the single crystal structure comprises insignificant distortion of an angle of refraction of incident light.