IP Library Granted Patent US 7,098,069
Granted Patent B2
US 7,098,069 · App. 10/349,750 · Granted Aug 29, 2006

Light emitting device, method of preparing the same and device for fabricating the same

Assignee: Semiconductor Energy Laboratory Co., Ltd.
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Quick Facts
Patent No.
US 7,098,069
App. No.
10/349,750
Granted
Aug 29, 2006
Kind
B2
Abstract

A light emitting device having a high definition, a high aperture ratio and a high reliability is provided. The present invention realizes a high definition and a high aperture ratio for a flat panel display of full colors using luminescent colors of red, green and blue without being dependent upon the film formation method and deposition precision of an organic compound layer by forming the laminated sections 21, 22 by means of intentionally and partially overlapping different organic compound layers of adjacent light emitting elements. Moreover, the protective film 32 a containing hydrogen is formed and the drawback in the organic compound layer is terminated with hydrogen, thereby realizing the enhancement of the brightness and the reliability.

Claims (54)

1. A method of fabricating a light emitting device having a plurality of light emitting elements comprising:

forming a light emitting layer comprising organic compound over an anode;

forming a cathode over said light emitting layer comprising organic compound,

forming a silicon nitride film containing hydrogen over said cathode, and

performing a treatment for terminating a drawback in said light emitting layer comprising organic compound with said silicon nitride film containing hydrogen.

2. A method of fabricating a light emitting device having a plurality of light emitting elements comprising:

forming a light emitting layer comprising organic compound over an anode;

forming a cathode over said light emitting layer comprising organic compound;

forming a diamond like carbon film containing hydrogen over said cathode, and

performing a treatment for terminating a drawback in said light emitting layer comprising organic compound with said diamond like carbon film containing hydrogen.

3. A method of fabricating a light emitting device having a plurality of light emitting elements comprising:

forming a light emitting layer comprising organic compound over a cathode;

forming an anode over said light emitting layer comprising organic compound;

forming a silicon nitride film containing hydrogen over said anode, and

performing a treatment for terminating a drawback in said light emitting layer comprising organic compound with said silicon nitride film containing hydrogen.

4. A method of fabricating a light emitting device having a plurality of light emitting elements comprising:

forming a light emitting layer comprising organic compound over a cathode;

forming an anode over said light emitting layer comprising organic compound;

forming a diamond like carbon film containing hydrogen over said anode, and

performing a treatment for terminating a drawback in said light emitting layer comprising organic compound with said diamond like carbon film containing hydrogen.

5. A method of fabricating a light emitting device comprising:

forming a light emitting layer comprising organic compound over an anode;

forming a cathode over said light emitting layer comprising organic compound; and

forming a silicon nitride film containing hydrogen over said cathode,

wherein hydrogen plasma is generated in the step of forming said silicon nitride film containing hydrogen, and

a treatment with said hydrogen plasma is performed for said light emitting layer comprising organic compound.

6. A method of fabricating a light emitting device comprising:

forming a light emitting layer comprising organic compound over an anode;

forming a cathode over said light emitting layer comprising organic compound; and

forming a diamond like carbon film containing hydrogen over said cathode,

wherein hydrogen plasma is generated in the step of forming the diamond like carbon film containing hydrogen, and

a treatment with said hydrogen plasma is performed for said light emitting layer comprising organic compound.

7. A method of fabricating a light emitting device comprising:

forming a light emitting layer comprising organic compound over a cathode;

forming an anode over said light emitting layer comprising organic compound; and

forming a silicon nitride film containing hydrogen over said anode,

wherein hydrogen plasma is generated in the step of forming said silicon nitride film containing hydrogen, and

a treatment with said hydrogen plasma is performed for said light emitting layer comprising organic compound.

8. A method of fabricating a light emitting device comprising:

forming a light emitting layer comprising organic compound over a cathode;

forming an anode over said light emitting layer comprising organic compound; and

forming a diamond like carbon film containing hydrogen over said anode,

wherein hydrogen plasma is generated in the step of forming said diamond like carbon film containing hydrogen, and

a treatment with said hydrogen plasma is performed for said light emitting layer comprising organic compound.

9. A method of fabricating a light emitting device comprising:

forming a light emitting layer comprising organic compound over an anode;

forming a cathode over said light emitting layer comprising organic compound;

forming a silicon nitride film containing hydrogen over the cathode; and

performing a heat treatment to diffuse hydrogen from the silicon nitride film containing hydrogen to the light emitting layer comprising organic compound.

10. A method of fabricating a light emitting device comprising:

forming a light emitting layer comprising organic compound over a cathode;

forming an anode over said light emitting layer comprising organic compound;

forming a silicon nitride film containing hydrogen over the anode; and

performing a heat treatment to diffuse hydrogen from the silicon nitride film containing hydrogen to the light emitting layer comprising organic compound.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 22, 2003
From: YAMAZAKI, SHUNPEI; HIROKI, MASAAKI; MURAKAMI, MASAKAZU; KUWABARA, HIDEAKI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 013698/0837 →
Priority Claims (1)
JP 2002-016244 · Jan 24, 2002 · national
Continuity (1)
Related Publication 20030183830A1 · Oct 2, 2003