Micro corner cube array, method of making the micro corner cube array, and display device

1. A method of making a micro corner cube array, the method comprising the steps of:

a) providing a substrate, at least a surface portion of which consists of cubic single crystals and which has a surface that is substantially parallel to {111} planes of the crystals; and

b) dry-etching the surface of the substrate anisotropically with an etching gas that is reactive with the substrate, thereby forming a plurality of unit elements of the micro corner cube array on the surface of the substrate, each said unit element being made up of a number of crystal planes that have been etched at a lower etch rate than the {111} planes of the crystals.

2. The method of claim 1 , the step b) comprises the step of exposing {100} planes of the crystals at the lower etch rate than the {111} planes thereof.

3. The method of claim 2 , wherein the step b) comprises the step of forming the unit elements such that each said unit element is made up of three {100} planes that are opposed substantially perpendicularly to each other.

4. The method of claim 2 , wherein at least the surface portion of the substrate prepared in the step a) is made of a compound semiconductor having a sphalerite structure.

5. The method of claim 4 , wherein the compound semiconductor is gallium arsenide and the surface of the substrate is substantially parallel to {111}A planes that are formed by gallium atoms.

6. The method of claim 1 , wherein the step b) comprises the step of dry-etching the surface of the substrate anisotropically with an etching gas including a halogen compound.

7. The method of claim 6 , wherein the etching gas includes a compound of arsenic and bromine.

8. The method of claim 6 , wherein the etching gas includes a compound of arsenic and chlorine.

9. The method of claim 1 , wherein the step b) comprises the step of dry-etching the surface of the substrate under such an etching condition as to fall within a surface-reaction-limited range.

10. The method of claim 1 , wherein the step b) comprises the step of dry-etching the surface of the substrate with not only the etching gas but also an arsenic gas as well.

11. The method of claim 1 , further comprising, between the steps a) and b), the step c) of covering the surface of the substrate with an etching mask layer, the etching mask layer including at least one masking element and at least one opening that are arranged to form a predetermined pattern.

12. The method of claim 11 , wherein the step b) comprises the step of forming the unit elements of the micro corner cube array such that the size of each said unit element is controlled according to the pattern of the etching mask layer that has been defined in the step c).

13. The method of one of claim 1 , wherein the step b) comprises the step of forming the unit elements such that each said unit element is made up of three substantially square planes that are opposed substantially perpendicularly to each other.

14. The method of claim 1 , further comprising the step of transferring the shape of the unit elements, which have been formed on the surface of the substrate, to a resin material.

15. The method of claim 1 , wherein {111} planes of the crystals are etched faster than are {100} planes of the crystals.

16. The method of claim 15 , further comprising:

forming a mask layer and a resist layer on the substrate;

using a mask pattern to etch a pattern in the mask layer and the resist layer; and

wherein the mask patter including a plurality of triangles, and wherein at least one side of the triangles is parallel to the (100) plane of one of the crystals.