IP Library › Granted Patent US 7,106,126
Granted Patent B2
US 7,106,126 · App. 11/248,323 · Granted Sep 12, 2006

Semiconductor integrated circuit device

Assignee: Rohm Co., Ltd.
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Quick Facts
Patent No.
US 7,106,126
App. No.
11/248,323
Granted
Sep 12, 2006
Kind
B2
Abstract

In a conventional semiconductor integrated circuit device, a means for preventing a backflow current has a high on-state resistance, which makes it impossible to reduce the voltage loss in normal operation. A semiconductor integrated circuit device of the invention has a first MOS transistor, a second MOS transistor provided between the first MOS transistor and a power supply terminal, and a means that, in normal operation, keeps the gate of the second MOS transistor at a predetermined potential (preferably the ground potential) and that, when a backflow current is likely, turns the second MOS transistor off. This helps prevent a backflow current while reducing the voltage loss in normal operation.

Claims (6)

1. An output stage circuit comprising:

a MOS output transistor;

a current shut-off switch; and

a comparator,

wherein the current shut-off switch is inserted between the MOS output transistor and a power terminal to which a first direct-current voltage is applied, and

wherein the comparator compares the first direct-current voltage and a second direct-current voltage outputted from the MOS output transistor so as to bring the current shut-off switch, if the first direct-current voltage is higher than the second direct-current voltage, into a conducting state and, if the first direct-current voltage is lower than the second direct-current voltage, into a non-conducting state.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 21, 2005
From: INOUE, KOICHI; KONDO, MASAHITO
To: ROHM CO., LTD.
Reel/Frame 017254/0306 →
Priority Claims (1)
JP 2003-101366 · Apr 4, 2003 · national
Continuity (2)
Division 1081424800 · Apr 1, 2004
Related Publication 20060028267A1 · Feb 9, 2006