Semiconductor memory device comprising magneto resistive element and its manufacturing method
A semiconductor memory device includes a memory cell, a side wall insulating film, and an interlayer insulating film. A memory cell includes a first ferromagnetic film, a tunnel barrier film formed on the first ferromagnetic film, and a second ferromagnetic film formed on the tunnel barrier film. The side wall insulating film is formed so as to surround at least sides of the second ferromagnetic film. The interlayer insulating film is formed so as to cover the memory cell and the side wall insulating film.
1. A semiconductor memory device comprising:
a memory cell comprising a first ferromagnetic film, a tunnel barrier film formed on the first ferromagnetic film, and a second ferromagnetic film formed on the tunnel barrier film;
a side wall insulating film formed so as to surround at least sides of the second ferromagnetic film; and
an interlayer insulating film formed so as to cover the memory cell and the side wall insulating film,
wherein the tunnel barrier film has a higher oxygen content in an in-surface edge portion than in an in-surface central portion.
2. The device according to claim 1 , wherein the side wall insulating film contacts with the tunnel barrier film.
3. The device according to claim 1 , wherein the side wall insulating film is formed of aluminum oxide.
4. The device according to claim 1 , wherein the side wall insulating film and the tunnel barrier film contain a common metal element.
5. The device according to claim 1 , wherein the side wall insulating film and the tunnel barrier film are both formed of aluminum oxide.
6. The device according to claim 1 , wherein the side wall insulating film contacts with at least a part of side wall of the tunnel barrier film along a circumferential direction.
7. The device according to claim 1 , wherein the tunnel barrier film is formed of aluminum oxide.
8. A semiconductor memory device comprising:
a memory cell comprising a first ferromagnetic film, a tunnel barrier film formed on the first ferromagnetic film, and a second ferromagnetic film formed on the tunnel barrier film; and
a side wall insulating film formed so as to surround at least sides of the second ferromagnetic film and containing a metal element,
wherein the tunnel barrier film has a higher oxygen content in an in-surface edge portion than in an in-surface central portion.
9. The device according to claim 8 , wherein the side wall insulating film contacts with the tunnel barrier film.
10. The device according to claim 8 , wherein the side wall insulating film is formed of aluminum oxide.
11. The device according to claim 8 , wherein the side wall insulating film and the tunnel barrier film contain a common metal element.
12. The device according to claim 8 , wherein the side wall insulating film and the tunnel barrier film are both formed of aluminum oxide.
13. The device according to claim 8 , wherein the side wall insulating film contacts with at least a part of side wall of the tunnel barrier film along a circumferential direction.
14. The device according to claim 8 , wherein the tunnel barrier film is formed of aluminum oxide.
15. A semiconductor memory device comprising:
a memory cell comprising a first ferromagnetic film, a tunnel barrier film formed on the first ferromagnetic film, and a second ferromagnetic film formed on the tunnel barrier film; and
a side wall insulating film formed on the tunnel barrier film so as to surround a periphery of the second ferromagnetic film,
wherein the tunnel barrier film has a higher oxygen content in an in-surface edge portion than in an in-surface central portion.
16. The device according to claim 15 , wherein the side wall insulating film is formed of aluminum oxide.
17. The device according to claim 15 , wherein the side wall insulating film and the tunnel barrier film contain a common metal element.
18. The device according to claim 15 , wherein the side wall insulating film and the tunnel barrier film are both formed of aluminum oxide.
19. The device according to claim 15 , wherein the side wall insulating film contacts with at least a part of side wall of the tunnel barrier film along a circumferential direction.
20. The device according to claim 15 , wherein the tunnel barrier film is formed of aluminum oxide.