Low-temperature silicon nitride deposition
A method including combining a silicon source precursor and a nitrogen source precursor at a temperature up to 550° C.; and forming a silicon nitride film. A system including a chamber; a silicon precursor source coupled to the chamber; a controller configured to control the introduction into the chamber of a silicon precursor from the silicon precursor source; and a memory coupled to the controller comprising a machine-readable medium having a machine-readable program embodied therein for directing operation of the system, the machine-readable program including instructions for controlling the second precursor source to introduce an effective amount of silicon precursor into the chamber at a temperature up to 550° C.
1. A method comprising:
combining a specific silicon source precursor and a nitrogen source precursor at a temperature up to 550° C.; and
forming a silicon nitride film, wherein the silicon source precursor has one of the general formula:
where R 1 is a saturated or unsaturated hydrocarbon chain comprising one or more carbon atoms,
where each of R 2 and R 3 is selected from a hydrogen, a halogen, and a saturated or unsaturated hydrocarbon moiety;
where each of R 4 and R 5 is selected from a saturated or unsaturated hydrocarbon; and
the general formula:
Si(NRC x H y NR) a H 4-2n ,
where R is selected from a H and a saturated or unsaturated hydrocarbon moiety,
where x is an integer greater than or equal to one,
where y is an integer greater than or equal to two, and
where a is one or two.
2. The method of claim 1 , wherein the nitrogen source precursor comprises ammonia, a substituted hydrazine, or an unsubstituted hydrazine.
3. A method comprising:
combining a silicon source precursor and a nitrogen source precursor; and
forming a silicon nitride film,
wherein the silicon source precursor is selected from one of the general formula:
where R 1 is a saturated or unsaturated hydrocarbon chain comprising one or more carbon atoms,
where each of R 2 and R 3 is selected from a hydrogen, a halogen, and a saturated or unsaturated hydrocarbon moiety, and
where each of R 4 and R 5 is selected from a saturated or unsaturated hydrocarbon, and
the general formula:
Si(NRC x H y NR) a H 4-2n ,
where R is selected from a H and a saturated or unsaturated hydrocarbon moiety,
where x is an integer greater than one or equal to one,
where y is an integer greater than or equal to two, and
where a is one or two.
4. The method of claim 3 , wherein the nitrogen source precursor comprises ammonia, a substituted hydrazine, or an unsubstituted hydrazine.
5. A method comprising:
combining a aminosilane source precursor and a nitrogen source precursor in a deposition chamber, wherein the aminosilane source precursor comprises a material having a property that will, in combination with the nitrogen source precursor, form a silicon nitride film at a temperature up to 550° C; and
forming a silicon nitride film, wherein the aminosilane is selected from one of the general formula:
where R 1 is a saturated or unsaturated hydrocarbon chain comprising one or more carbon atoms,
where each of R 2 and R 3 is selected from a H, a halogen, and a saturated or unsaturated hydrocarbon moiety, and
where each of R 4 and R 5 is selected from a saturated or unsaturated hydrocarbon, and
the general formula:
Si(NRC x H y NR) a H 4-2a ,
where R is selected from a H and a saturated or unsaturated hydrocarbon moiety,
where x is an integer greater than or equal to one,
where y is an integer greater than or equal to two, and
where a is one or two.
6. The method of claim 5 , wherein the nitrogen source precursor comprises ammonia, a substituted hydrazine, or an unsubstituted hydrazine.