Photodetectors, optical modules, and optical transmission devices
A method is provided to provide a photodetector that can enhance the light receiving sensitivity with a relatively simple structure, and that can maintain a high speed responsiveness. A photodetector having a MSM (Metal-Semiconductor-Metal) structure, including a substrate, a multilayer film that is disposed over the substrate and includes a low refractive index layer and a high refractive index layer that are alternately laminated as a unit cycle. At least one of the low refractive index layer and the high refractive index layer is a photoabsorption layer composed of semiconductor, and a portion that is embedded in the multilayer film, the portion having at least one pair of opposing electrodes within the multilayer film. The multilayer film is formed such that a wavelength region corresponding to a band edge of a photonic band overlaps at least a part of an absorption band of the photoabsorption layer, to thereby delay a group velocity of incidence light Pin with a predetermined wavelength that belongs to the absorption band of the photoabsorption layer.
1. A photodetector having a MSM (Metal-Semiconductor-Metal) structure, comprising:
a substrate;
a multilayer film that is disposed over the substrate and includes a low refractive index layer and a high refractive index layer that are alternately laminated as a unit cycle, at least one of the low refractive index layer and the high refractive index layer being a photoabsorption layer composed of semiconductor;
a first electrode having a portion embodied in the multilayer film; and
a second electrode having a portion embodied in the multilayer film, the portion of the second electrode opposite the portion of the first electrode,
the multilayer film being formed such that a wavelength region corresponding to a band edge of a photonic band overlaps at least a part of an absorption band of the photoabsorption layer, thereby delaying a group velocity of incidence light with a predetermined wavelength that belongs to the absorption band of the photoabsorption layer.
2. The photodetector according to claim 1 ,
a plurality of the multilayer films being stacked on the substrate,
a plurality of the first electrodes and second electrodes being provided for the plurality of the multilayer films, and
the plurality of the multilayer films being formed such that band edges of photonic bands differ from one another to delay group velocities of light having different wavelengths.
3. The photodetector according to claim 2 , ends of photonic band gaps in a long-wavelength side of the plurality of multilayer films shifting in stages toward the long-wavelength side from a light incidence surface side to a side of the substrate.
4. The photodetector according to claim 2 , ends of the photonic band gaps in a short-wavelength side of the plurality of multilayer films shifting in stages toward the short-wavelength side from of the light incidence surface side to the side of the substrate.
5. The photodetector according to claim 1 , an end layer of the multilayer film on the light incidence surface side being the low refractive index layer, and the end layer being formed to have a layer thickness that is set so as not to reflect the incidence light.
6. The photodetector according to claim 1 , the photoabsorption layer being an indirect transition type semiconductor.
7. The photodetector according to claim 1 , the low refractive index layer consisting of one of oxide and nitride.
8. The photodetector according to claim 1 , further comprising:
a multilayer reflection film between the multilayer film and the substrate.
9. The photodetector according to claim 1 , the first electrode and the second electrode having a planar configuration in a comb shape.
10. An optical module, comprising:
a photodetector according to claim 1 .
11. An optical transmission device comprising:
an optical module according to claim 10 .