Semiconductor laser device and method for fabricating the same
A semiconductor laser device includes a substrate which is made of, e.g., silicon and which has in its principal surface first and second recessed portions formed at a distance from each other. Disposed in the first recessed portion is a first semiconductor laser chip in the form of a function block, which emits an infrared laser beam. Disposed in the second recessed portion is a second semiconductor laser chip in the form of a function block, which emits a red laser beam.
1. A semiconductor laser device comprising:
a substrate having a plurality of recessed portions in its principal surface, and
a plurality of semiconductor laser chips each disposed in one of the recessed portions,
wherein the semiconductor laser chips are a facet-emitting type in which a laser beam is emitted from a facet,
plan configurations of the semiconductor laser chips and the recessed portions are asymmetrical,
the recessed portions are formed so that the respective emission directions of the semiconductor laser chips are aligned with each other and are substantially parallel to each other with a distance therebetween, and
a notch, through which a laser-emitting portion of an associated one of the semiconductor laser chips is exposed, is formed at an edge portion of the substrate to face the laser-emitting portion.
2. The device of claim 1 , wherein the notch is formed in the substrate on front and rear facets of the semiconductor laser chips.
3. The device of claim 1 , wherein the recessed portions and the notch have a same depth.
4. A semiconductor laser device comprising:
a substrate having a plurality of recessed portions in its principal surface, and
a plurality of semiconductor laser chips each disposed in one of the recessed portions,
wherein the semiconductor laser chips are a facet-emitting type in which a laser beam is emitted from a facet,
in each said semiconductor laser chip, optical output from its front facet is equal to optical output from its rear facet,
the recessed portions are formed so that the respective emission directions of the semiconductor laser chips are aligned with each other, and
a notch, through which a laser-emitting portion of an associated one of the semiconductor laser chips is exposed, is formed in the substrate to face the laser-emitting portion.
5. A semiconductor laser device comprising:
a substrate having a plurality of recessed portions in its principal surface, and
a plurality of semiconductor laser chips each disposed in one of the recessed portions,
wherein the semiconductor laser chips are a facet-emitting type in which a laser beam is emitted from a facet,
plan configurations of the semiconductor laser chips and the recessed portions are asymmetrical,
the recessed portions are formed so that the respective emission directions of the semiconductor laser chips are aligned with each other and are substantially parallel to each other with a distance therebetween, and
a notch, through which a laser-emitting portion of an associated one of the semiconductor laser chips is exposed, is formed in the substrate to face the laser-emitting portion, and
the plan configurations of the semiconductor laser chips vary in accordance with their emission wavelengths.
6. A semiconductor laser device comprising:
a substrate having a plurality of recessed portions in its principal surface, and
a plurality of semiconductor laser chips each disposed in one of the recessed portions,
wherein the semiconductor laser chips are a facet-emitting type in which a laser beam is emitted from a facet,
plan configurations of the semiconductor laser chips and the recessed portions are asymmetrical,
the recessed portions are formed so that the respective emission directions of the semiconductor laser chips are aligned with each other and are substantially parallel to each other with a distance therebetween, and
a notch, through which a laser-emitting portion of an associated one of the semiconductor laser chips is exposed, is formed in the substrate to face the laser-emitting portion, and
the semiconductor laser chips vary in shape in accordance with their optical outputs.
7. A semiconductor laser device comprising:
a substrate having a plurality of recessed portions in its principal surface, and
a plurality of semiconductor laser chips each disposed in one of the recessed portions,
wherein a chip electrode is formed on a face of each said semiconductor laser chip which faces the bottom face of the associated one of the recessed portions,
the recess electrode is formed such that an end portion of the recess electrode extends beyond the principal surface of the substrate and so as to be shared by the semiconductor laser chips, and
a notch, through which a laser-emitting portion of an associated one of the semiconductor laser chips is exposed, is formed in the substrate to face the laser-emitting portion.