Semiconductor device
This specification relates to a semiconductor device that comprises a semiconductor substrate 11 , a source region 12 and a drain region 13 , which are formed on the semiconductor substrate 11 with a channel region 14 therebetween; a floating gate electrode 152 that is formed on the channel region 14 with a gate insulator film 151 therebetween; a ferroelectric film 154 that is formed on the floating gate electrode 152 ; and a control gate electrode 156 that is formed on the ferroelectric film 154 , wherein intermediate insulator films 153 and 155 are formed between at least one of the pairs consisting of the floating gate electrode 152 and the ferroelectric film 154 , and the ferroelectric film 154 and the control gate electrode 156 , and the intermediate insulator films 153 and 155 are made of hafnium oxide that contains nitrogen atoms.
1. A semiconductor device comprising:
a semiconductor substrate;
a source region and a drain region, which are formed on the semiconductor substrate with a channel region therebetween;
a floating gate electrode that is formed on the channel region with a gate insulator film therebetween;
a ferroelectric film that is formed on the floating gate electrode; and
a control gate electrode that is formed on the ferroelectric film;
wherein an intermediate insulator film is formed between at least one of the pairs consisting of the floating gate electrode and the ferroelectric film, and the ferroelectric film and the control gate electrode; and
the intermediate insulator film is made of a hafnium oxide that contains nitrogen atoms.
2. The semiconductor device according to claim 1 , wherein intermediate insulator films are formed both between the floating gate electrode and the ferroelectric film, and between the ferroelectric film and the control gate electrode.
3. The semiconductor device according to claim 1 , wherein the gate insulator film is made of hafnium oxide that contains nitrogen atoms.
4. The semiconductor device according to claim 1 , wherein the intermediate insulator film contains nitrogen atoms of not less than 0.1 atomic % and not more than 30.0 atomic %.
5. The semiconductor device according to claim 1 , wherein the intermediate insulator film contains nitrogen atoms of not less than 0.5 atomic % and not more than 10.0 atomic %.
6. The semiconductor device according to claim 1 , wherein the intermediate insulator film contains nitrogen atoms of not less than 1.0 atomic % and not more than 6.0 atomic %.
7. The semiconductor device according to claim 1 , wherein the floating gate electrode comprises silicon or metal.
8. The semiconductor device according to claim 1 , wherein the ferroelectric film comprises silicon or metal.