Piezoelectric element
View Patent ↗A piezoelectric element including an upper electrode, a piezoelectric and/or electrostrictive material and a lower electrode, characterized in that the piezoelectric and/or electrostrictive material is a composite oxide constituted by ABO 3 as general formula and the piezoelectric and/or electrostrictive material has a twin crystal.
1. A piezoelectric element comprising an upper electrode, a piezoelectric and/or electrostrictive material and a lower electrode, wherein the piezoelectric and/or electrostrictive material is a composite oxide constituted by ABO 3 as a general formula, the piezoelectric and/or electrostrictive material has a twin crystal structure, and the twin crystal structure has a twin crystal plane selected from a group represented by {110}.
2. A piezoelectric element according to claim 1 , wherein the piezoelectric and/or electrostrictive material is a tetragonal crystal.
3. A piezoelectric element according to claim 1 , wherein the piezoelectric and/or electrostrictive material is a rhombic crystal.
4. A piezoelectric element according to claim 1 , wherein the piezoelectric and/or electrostrictive material has a twin crystal rate from 0.001 to 1.0.
5. A piezoelectric element according to claim 1 , wherein the piezoelectric and/or electrostrictive material has an orientation property.
6. A piezoelectric element according to claim 5 , wherein the piezoelectric and/or electrostrictive material has an orientation rate of 99% or higher in a direction of at least an axis.
7. A piezoelectric element according to claim 5 , wherein the piezoelectric and/or electrostrictive material has a principal crystal plane, in contact with the upper electrode, of {100}.
8. A piezoelectric element according to claim 5 , wherein the piezoelectric and/or electrostrictive material has a principal crystal plane, in contact with the upper electrode, of {111}.
9. A piezoelectric element according to claim 5 , wherein the piezoelectric and/or electrostrictive material has a principal crystal plane, in contact with the upper electrode, of {110}.
10. A piezoelectric element according to claim 1 , wherein the lower electrode and the piezoelectric and/or electrostrictive material are directly formed on the substrate.
11. A piezoelectric element according to claim 10 , wherein a layer including the piezoelectric and/or electrostrictive material is formed with a thickness of 1 to 10 μm.
12. A piezoelectric actuator employing a piezoelectric element according to claim 1 .
13. An ink jet recording head employing a piezoelectric element according to claim 1 .
14. A piezoelectric element comprising an upper electrode, a piezoelectric and/or electrostrictive material and a lower electrode, wherein the piezoelectric and/or electrostrictive material is a composite oxide constituted by ABO 3 as a general formula, the piezoelectric and/or electrostrictive material has a twin crystal structure, and the twin crystal structure has a twin crystal plane selected from a group represented by {100}.
15. A piezoelectric element according to claim 14 , wherein the piezoelectric and/or electrostrictive material is a rhombohedral crystal.
16. A piezoelectric element according to claim 14 , wherein the piezoelectric and/or electrostrictive material has a twin crystal rate from 0.001 to 1.0.
17. A piezoelectric element according to claim 14 , wherein the piezoelectric and/or electrostrictive material has an orientation property.
18. A piezoelectric element according to claim 14 , wherein the lower electrode and the piezoelectric and/or electrostrictive material are directly formed on the substrate.
19. A piezoelectric actuator employing a piezoelectric element according to claim 14 .
20. An ink jet recording head employing a piezoelectric element according to claim 14 .