Voltage-controlled bidirectional switch
The invention concerns a voltage-controlled triac-type component, formed in a N-type substrate ( 1 ) comprising first and second vertical thyristors (Th 1 , Th 2 ), a first electrode (A 2 ) of the first thyristor, on the front side of the component, corresponding to a first N-type region ( 6 ) formed in a first P-type box ( 5 ), the first box corresponding to a first electrode (A 2 ) of the second thyristor, the first box containing a second N-type region ( 8 ); and a pilot structure comprising, above an extension of a second electrode region ( 4 ) of the second thyristor, a second P-type box ( 11 ) containing third and fourth N-type regions, the third region ( 12 ) and a portion of the second box ( 11 ) being connected to a gate terminal (G), the fourth region ( 13 ) being connected to the second region ( 8 ).
1. A voltage-controlled monolithic component of triac type, formed in a substrate of a first conductivity type, including:
first and second vertical thyristors, a first main electrode of the first thyristor, on a front surface side of the component, corresponding to a first region of a first conductivity type formed in a first well of a second conductivity type, said first well corresponding to a first main electrode of the second thyristor, the first well containing a second region of the first conductivity type; and
a pilot structure including, on the front surface side, above an extension of a second main electrode region of the second thyristor, a second well of the second conductivity type containing third and fourth regions of the first conductivity type, the third region and a portion of the second well being connected to a gate terminal, the fourth region being connected to the second region.
2. The component of claim 1 , wherein the component is surrounded at its periphery with a wall of the second conductivity type extending from one surface to the other of the component.
3. The component of claim 2 , wherein, on the front surface side, the first well includes an extension which surrounds the second well.
4. The component of claim 3 , wherein an external periphery of the first well and of its extension is surrounded with a lightly-doped ring of the second conductivity type.
5. A voltage-controlled monolithic component of triac type, formed in a substrate of a first conductivity type comprising:
a first well of a second conductivity type comprising a first and second region of the first conductivity type;
a pilot structure comprising a second well of the second conductivity type and a third and fourth region of the first conductivity type, wherein the third region and a portion of the second well are connected to a gate terminal, and wherein the second region and fourth region are connected; and
a first thyristor comprising a first main electrode corresponding to the first region and a second thyristor comprising a first main electrode corresponding to the first well, wherein an extension of a second main electrode of the second thyristor is located below the pilot structure.
6. The component of claim 5 , wherein the component is surrounded at its periphery with a wall of the second conductivity type extending from one surface to the other of the component.
7. The component of claim 6 , wherein, on the front surface side, the first well includes and extension which surrounds the second well.
8. The component of claim 7 , wherein an external periphery of the first well and of its extension is surrounded with a lightly-doped ring of the second conductivity type.