Monolithic integrated crystal-structure-processed mechanical, and combined mechanical and electrical devices, and methods and systems for making

1. A method of forming, from a precursor material having selectively and controllably changeable crystalline-structure related mechanical properties, a monolithic array of mechanical devices each possessing (a) a predetermined configuration, and therein (b) a set of such mechanical properties, that are desired for the performance, by each completed device, of a pre-chosen mechanical task within the setting of the monolithic structure, said method comprising

placing an appropriate broad-expanse precursor body of such material in a processing zone,

selecting, for each device which is to be created, an associated volumetric region in that body which is suitable (a) for the creation therefrom of the desired configuration which is to be associated with that region, and (b) for the establishment therein of the desired set of associated, crystalline-structure-related mechanical properties,

within the processing zone, subjecting each selected region to a controlled changing of the crystalline structure therein, and thus of the related mechanical properties, and

by that process, achieving in each selected region, the associated, desired set of mechanical properties.

2. The method of claim 1 which further comprises additionally forming in such a monolithic array of mechanical devices, a similar array of electrical devices appropriately interspersed physically with the mechanical devices, and wherein the selecting step further includes selecting, for each electrical device, an associated volumetric region in the body of precursor material which is suitable (a) for the creation therein of the desired electrical device configuration, and (b) for the establishment in that associated region for each device of the desired set of crystalline-structure related electrical properties, and the subjecting step further includes effecting controlled changing of the crystalline structure in the electrical-device regions thus to produce the desired electrical properties in those regions, thereby to achieve the desired electrical devices.

3. The method of claim 2 , wherein the body of material takes the form of a layer having a defined thickness, and said subjecting involves melting and re-crystallizing of zones in that layer through the full depth of the layer at the location of each zone.

4. The method of claim 2 , wherein the body of material takes the form of a layer having a defined thickness, and said subjecting involves melting and re-crystallizing of zones in that layer through less than the full depth of the layer at the location of each zone.

5. The method of claim 2 , wherein said subjecting is performed in a manner which differentiates and distinguishes different zones in a region, whereby such differentiated and distinguished zones possess, after the subjecting step, different internal properties.

6. The method of claim 2 , wherein said subjecting is performed by a controlled energy beam which is directed toward a surface of the material body.

7. The method of claim 6 , wherein the controlled energy beam takes the form of a laser beam.

8. The method of claim 7 , wherein during the subjecting step, the location of beam-body impingement moves over the mentioned surface of the body.

9. The method of claim 2 , wherein said subjecting is performed by a pair of controlled energy beams which are directed toward opposite surfaces in the material body.

10. The method of claim 9 , wherein the controlled energy beams are laser beams.

11. The method of claim 10 , wherein, during the subjecting step, the locations of beam-body impingement move over such opposite surfaces in the body.

12. The method of claim 2 , wherein the controlled changing of crystalline structure produces an enlargement of internal grain size.

13. The method of claim 1 , wherein the body of material takes the form of a layer having a defined thickness, and said subjecting involves melting and re-crystallizing of zones in that layer through the full depth of the layer at the location of each zone.

14. The method of claim 1 , wherein the body of material takes the form of a layer having a defined thickness, and said subjecting involves melting and re-crystallizing of zones in that layer through less than the full depth of the layer at the location of each zone.

15. The method of claim 1 , wherein said subjecting is performed in a manner which differentiates and distinguishes different zones in a region, whereby such differentiated and distinguished zones possess, after the subjecting step, different internal properties.

16. The method of claim 1 , wherein said subjecting is performed by a controlled energy beam which is directed toward a surface of the material body.

17. The method of claim 16 , wherein the controlled energy beam takes the form of a laser beam.

18. The method of claim 17 , wherein during the subjecting step, the location of beam-body impingement moves over the mentioned surface of the body.

19. The method of claim 1 , wherein said subjecting is performed by a pair of controlled energy beams which are directed toward opposite surfaces in the material body.

20. The method of claim 19 , wherein the controlled energy beams are laser beams.

21. The method of claim 20 , wherein, during the subjecting step, the locations of beam-body impingement move over such opposite surfaces in the body.

22. The method of claim 1 , wherein the controlled changing of crystalline structure produces an enlargement of internal grain size.

23. A monolithic array of mechanical devices, each having a predetermined configuration, and a set of internal mechanical properties, said array comprising

a broad-expanse body of a material which has selectively and controllable changeable crystalline-structure related mechanical properties, and

a distribution over and within said body of an array of plural mechanical devices, each characterized by processed internal mechanical properties which have resulted from prior processing of the body to change internal crystalline structure within the region of the body which defines the mechanical device.

24. The array of claim 23 which further includes a distribution of plural electrical devices which have also resulted from like prior processing of the body to change internal crystalline structure within the region of the body which defines the electrical device.